• 한국항행학회논문지
• /
• 제16권5호
• /
• pp.810-816
• /
• 2012

본 논문에서는 근접 전기유도 무선통신 시스템의 표준 기술인 TransferJet 시스템의 BER(Bit Error Ratio) 성능이 분석된다. TransferJet 시스템은 타 무선통신 시스템들과 비교해서 짧은 통신 범위(즉, 무선통신환경에서 높은 보안성), 더 적은 다중경로 왜곡, 그리고 높은 전송률을 제공하는 장점이 있다. 수신신호를 복조하기 위하여 TransferJet 수신단의 역확산기와 복조기에 연판정 결합(SC: soft-decision combining) 혹은 경판정 결합(HC: hard-decision combining)이 적용될 수 있다. 확산계수가 4이상인 경우에 SC 방식은 HC에 비하여 최소 2 dB의 SNR 이득을 제공한다. 또한, 모의실험 결과로부터, 3비트 양자화는 이중-정밀 부동소수점과 거의 동일한 성능을 제공하기 때문에 TransferJet 시스템에서 SC 방식에 대한 최적 양자화 비트는 3비트로 결론지을 수 있다.

• 대한기계학회논문집A
• /
• 제41권6호
• /
• pp.525-532
• /
• 2017

차세대 주력 디스플레이인 유기 및 양자점 발광 다이오드를 잉크젯을 이용하여 저렴한 비용으로 생산하기 위한 연구개발이 진행되어 왔으며, 잉크 액적의 토출 신뢰성을 고속으로 검사하기 위한 모니터링 장비의 개발이 요구된다. 본 연구에서는 기존 직선 운동 방식의 잉크젯 모니터링 장비 대신에 로터리 및 리니어 초음파 모터를 이용하여 미러를 회전시킴으로써 노즐들에서 토출되는 잉크 액적들을 모니터링할 수 있는 장비를 개발하여 측정 능력을 시험하였다. $10{\mu}m$, $30{\mu}m$ 및 $50{\mu}m$ 직경 원형의 측정 오차는 각각 $0.5{\pm}1.0{\mu}m$, $-1.2{\pm}0.3{\mu}m$ 및 $0.2{\pm}0.5{\mu}m$였다. 모니터링 시간은 17초가 소요되었으며, 제어 프로그램의 최적화를 통해 8.6초까지 모니터링 시간을 단축할 수 있는 가능성을 확인하였다.

• 한국재료학회지
• /
• 제22권3호
• /
• pp.140-144
• /
• 2012

Compared with bulk material, quantum dots have received increasing attention due to their fascinating physical properties, including optical and electronic properties, which are due to the quantum confinement effect. Especially, Luminescent CdSe quantum dots have been highly investigated due to their tunable size-dependent photoluminescence across the visible spectrum. They are of great interest for technical applications such as light-emitting devices, lasers, and fluorescent labels. In particular, quantum dot-based light-emitting diodes emit high luminance. Quantum dots have very high luminescence properties because of their absorption coefficient and quantum efficiency, which are higher than those of typical dyes. CdSe quantum dots were synthesized as a function of the synthesis time and synthesis temperature. The photoluminescence properties were found strongly to depend on the reaction time and the temperature due to the core size changing. It was also observed that the photoluminescence intensity is decreased with the synthesis time due to the temperature dependence of the band gap. The wavelength of the synthesized quantum dots was about 550-700 nm and the intensity of the photoluminescence increased about 22~70%. After the CdSe quantum dots were synthesized, the particles were found to have grown until reaching a saturated concentration as time increased. Red shift occurred because of the particle growth. The microstructure and phase developments were measured by transmission electron microscopy (TEM) and X-ray diffractometry (XRD), respectively.

• 한국분말재료학회지
• /
• 제24권1호
• /
• pp.6-10
• /
• 2017

This study investigates the main growth mechanism of InP during InP/ZnS reaction of quantum dots (QDs). The size of the InP core, considering a synthesis time of 1-30 min, increased from the initial 2.56 nm to 3.97 nm. As a result of applying the proposed particle growth model, the migration mechanism, with time index 7, was found to be the main reaction. In addition, after the removal of unreacted In and P precursors from bath, further InP growth (of up to 4.19 nm (5%)), was observed when ZnS was added. The full width at half maximum (FWHM) of the synthesized InP/ZnS quantum dots was found to be relatively uniform, measuring about 59 nm. However, kinetic growth mechanism provides limited information for InP / ZnS core shell QDs, because the surface state of InP changes with reaction time. Further study is necessary, in order to clearly determine the kinetic growth mechanism of InP / ZnS core shell QDs.

• 한국분말재료학회지
• /
• 제24권6호
• /
• pp.489-493
• /
• 2017

In this study, the surface passivation process for InP-based quantum dots (QDs) is investigated. Surface coating is performed with poly(methylmethacrylate) (PMMA) and thioglycolic acid. The quantum yield (QY) of a PMMA-coated sample slightly increases by approximately 1.3% relative to that of the as-synthesized InP/ZnS QDs. The QYs of the uncoated and PMMA-coated samples drastically decrease after 16 days because of the high defect state density of the InP-based QDs. PMMA does not have a significant effect on the defect passivation. Thioglycolic acid is investigated in this study for the effective surface passivation of InP-based QDs. Surface passivation with thioglycolic acid is more effective than that with the PMMA coating, and the QY increases from 1.7% to 11.3%. ZnS formed on the surface of the InP QDs and S in thioglycolic acid show strong bonding property. Additionally, the QY is further increased up to 21.0% by the photochemical reaction. Electron-hole pairs are formed by light irradiation and lead to strong bonding between the inorganic and thioglycolic acid sulfur. The surface of the InP core QDs, which does not emit light, is passivated by the irradiated light and emits green light after the photochemical reaction.

• 한국분말재료학회지
• /
• 제23권2호
• /
• pp.91-94
• /
• 2016

High-quality colloidal CdSe/ZnS (core/shell) is synthesized using a continuous microreactor. The particle size of the synthesized quantum dots (QDs) is a function of the precursor flow rate; as the precursor flow rate increases, the size of the QDs decreases and the band gap energy increases. The photoluminescence properties are found to depend strongly on the flow rate of the CdSe precursor owing to the change in the core size. In addition, a gradual shift in the maximum luminescent wave (${\lambda}_{max}$) to shorter wavelengths (blue shift) is found owing to the decrease in the QD size in accordance with the quantum confinement effect. The ZnS shell decreases the surface defect concentration of CdSe. It also lowers the thermal energy dissipation by increasing the concentration of recombination. Thus, a relatively high emission and quantum yield occur because of an increase in the optical energy emitted at equal concentration. In addition, the maximum quantum yield is derived for process conditions of 0.35 ml/min and is related to the optimum thickness of the shell material.

• 센서학회지
• /
• 제32권3호
• /
• pp.169-173
• /
• 2023

With the increasing concern of global warming caused by greenhouse gases owing to the recent industrial development, there is a growing need for advanced technology to control these emissions. Among the various greenhouse gases, nitrogen dioxide (NO₂) is a major contributor to global warming and is mainly released from sources, such as automobile exhaust and factories. Although semiconductor-type NO₂ gas sensors, such as SnO₂, have been extensively studied, they often require high operating temperatures and complicated manufacturing processes, while lacking selectivity, resulting in inaccurate measurements of NO₂ gas levels. To address these limitations, a novel sensor using PbS quantum dots (QDs) was developed, which operates at low temperatures and exhibits high selectivity toward NO₂ gas owing to its strong oxidation reaction. Furthermore, the use of P3HT conductive polymer improved the thin film quality, reactivity, and reaction rate of the sensor. The sensor demonstrated the ability to accurately measure NO₂ gas concentrations ranging from 500 to 100 ppm, with a 5.1 times higher sensitivity, 1.5 times higher response rate, and 1.15 times higher recovery rate compared with sensors without P3HT.

• 센서학회지
• /
• 제29권6호
• /
• pp.388-393
• /
• 2020

In this study, a PbS quantum dots (QDs)-based H₂ gas sensor with a Pd electrode was proposed. QDs have a size of several nanometers, and they can exhibit a high surface area when forming a thin film. In particular, the NH₂ present in the ligand of PbS QDs and H₂ gas are combined to form NH₃⁺, subsequently the electrical characteristics of the QDs change. In addition to the resistance change owing to the reaction between Pd and H₂ gas, the resistance change owing to the reaction between the NH₂ of PbS QDs and H₂ gas increases the current signal at the sensor output, which can produce a high output signal for the same concentration of H₂ gas. Using the XRD and absorbance properties, the synthesis and particle size of the synthesized PbS QDs were analyzed. Using PbS QDs, the sensitivity was significantly improved by 44%. In addition, the proposed H₂ gas sensor has high selectivity because it has low reactivity with heterogeneous gases such as C₂H₂, CO₂, and CH₄.

• 중소기업융합학회논문지
• /
• 제6권1호
• /
• pp.1-5
• /
• 2016

본 연구는 정보화경영체제의 운영이 조직행동 및 구성원의 성과에 미치는 영향을 파악할 수 있는 모형을 개발하고자 하였다. IMS의 운영과 조직성과에 대한 조사를 통하여 양자 간의 상관관계를 찾고자 하는 것이다. 그 결과 IMS를 인식하는 수준은 조직성과의 수준은 결정한다는 것을 발견하였으며 조직성과를 증진시키고 지속적인 경영을 수행하기 위해서는 IMS가 주요변수가 될 수 있다는 점을 제시하게 되었다. 향후 조직성과 분석과 효율적인 IMS의 운영방법에 대한 논의가 요구된다.

• 한국재료학회지
• /
• 제18권7호
• /
• pp.379-383
• /
• 2008

We report on the light-emitting diode (LED) characteristics of core-shell CdSe/ZnS nanocrystal quantum dots (QDs) embedded in $TiO_2$thin films on a Si substrate. A simple p-n junction could be formed when nanocrystal QDs on a p-type Si substrate were embedded in ${\sim}5\;nm$ thick $TiO_2$ thin film, which is inherently an n-type semiconductor. The $TiO_2$ thin film was deposited over QDs at $200^{\circ}C$ using plasma-enhanced metallorganic chemical vapor deposition. The LED structure of $TiO_2$/QDs/Si showed typical p-n diode currentvoltage and electroluminescence characteristics. The colloidal core-shell CdSe/ZnS QDs were synthesized via pyrolysis in the range of $220-280^{\circ}C$. Pyrolysis conditions were optimized through systematic studies as functions of synthesis temperature, reaction time, and surfactant amount.