• Title/Summary/Keyword: ICP(inductively coupled plasma)

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Comparison of E-ICP Effect for Large Area Plasma Source (대면적 플라즈마 소스에의 E-ICP 적용과 그 효과 비교)

  • 김진우;손민영;박세근;오범환
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2000.07a
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    • pp.608-611
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    • 2000
  • Large area plasma source becomes important as the substrate size increases. In this work, four inductively coupled plasma(ICP) unit sources are distributed 2${\times}$2 array. E-ICP concept is applied to the 2${\times}$2 array ICP and its effect is examined. Characteristics of the plasma are measured, and photoresist etching is performed with oxygen plasma. Good etching characteristic in terms of etching rate and uniformity can be obtained with E-ICP.

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The Present Status of Development of Inductively Coupled Plasma Simulator based on Fluid Model (유체 모델을 기반으로 하는 유도 결합 플라즈마 시뮬레이터 개발 현황)

  • Kwon, D.C.;Yoon, N.S.
    • Journal of the Korean Vacuum Society
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    • v.18 no.3
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    • pp.151-163
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    • 2009
  • The domestic development status of Inductively Coupled Plasma (ICP) simulator which is based on fluid model is explained. As each part which composes the unified simulator, electron heating module, charged and neutral particle transport module, surface reaction module including a sheath model, and GUI (Graphic User Interface) with pre- and post-processors are described in order. Also, we present data base status of chemical reaction and physical collision, which has been applied to the recently developed simulator until now. Lastly, some future plans of development are suggested.

Analysis of Mineral in Korean Apple Juice by Inductively Coupled Plasma (Inductively Coupled Plasma를 이용한 사과주스중의 무기성분 분석)

  • 김성수
    • The Korean Journal of Food And Nutrition
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    • v.12 no.4
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    • pp.344-349
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    • 1999
  • The mineral contents were analyzed for apple juices by Inductively Coupled Plasma. The Mg contents of tested commercial apple juices ranged 6.27∼32.91ppm, Ca 15,95∼3.11.76ppm K231∼1148.02ppm Na 39.82∼115.68ppm and P 19.27∼304.02ppm. The mineal contents of model apple juice were Mg 29.83∼45.65ppm Ca 16.98∼30.98ppm K 814.28∼1,256.70ppm Na 19.88∼26.85ppm and P 25.88∼54.71ppm. respectively. Comparing mineral contents of model apple juices and commercial apple juice, Na, Ca and P contents of commercial apple juices were higher but Mg, K contents were lower than that of model apple juices. Among the mineral content of apple juices. K was the major element.

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Double-Side Notched Long-Period Fiber Gratings fabricated by Using an Inductively Coupled Plasma for Force Sensing

  • Fang, Yu-Lin;Huang, Tzu-Hsuan;Chiang, Chia-Chin;Wu, Chao-Wei
    • Journal of the Korean Physical Society
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    • v.73 no.9
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    • pp.1399-1404
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    • 2018
  • This study used an inductively coupled plasma (ICP) dry etching process with a metal amplitude mask to fabricate a double-side notched long-period fiber grating (DNLPFG) for loading sensing. The DNLPFG exhibited increasing resonance attenuation loss for a particular wavelength when subjected to loading. When the DNLPFG was subjected to force loading, the transmission spectra were changed, showing a with wavelength shift and resonance attenuation loss. The experimental results showed that the resonant dip of the DNLPFG increased with increasing loading. The maximum resonant dip of the $40-{\mu}m$ DNLPFG sensor was -26.522 dB under 0.049-N loading, and the largest force sensitivity was -436.664 dB/N. The results demonstrate that the proposed DNLPFG has potential for force sensing applications.

Study of Dry Etching of SnO thin films using a Inductively Coupled Plasma (Inductively Coupled Plasma를 이용한 SnO 박막의 식각 특성 연구)

  • Kim, Su-Kon;Park, Byung-Ok;Lee, Joon-Hyung;Kim, Jeong-Joo;Heo, Young-Woo
    • Journal of the Korean institute of surface engineering
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    • v.49 no.1
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    • pp.98-103
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    • 2016
  • The dry etching characteristics of SnO thin films were investigated using inductively coupled plasma (ICP) in Ar, $CF_4$, $Cl_2$ chemistries. the SnO thin films were deposited by reactive rf magnetron sputtering with Sn metal target. In order to study the etching rates of SnO, the processing factors of processing pressure, source power, bias power, and etching gas were controlled. The etching behavior of SnO films under various conditions was obtained and discussed by comparing to that of $SiO_2$ films. In our results, the etch rate of SnO film was obtained as 94nm/min. The etch rates were mainly affected by physical etching and the contribution of chemical etching to SnO films appeared relatively week.

Comparison of InGaef etching $BCl_3,\;BCl_3/Ar\;and\;BCl_3/Ne$ inductively coupled plasmas ($BCl_3,\;BCl_3/Ar,\;BCl_3/Ne$ 유도결합 플라즈마에 의한 InGaP 건식 식각 비교)

  • Baek, In-Kyoo;Lim, Wan-Tae;Lee, Je-Won;Jo, Guan-Sik;Jeon, Min-Hyun
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.07a
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    • pp.361-365
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    • 2003
  • Planar Inductively Coupled Plasma (PICP) etching of InGaP was performed in $BCl_3,\;BCl_3/Ar\;and\;BCl_3/Ne$ plasmas as a function of ICP source power ($0\;{\sim}\;500\;W$), RIE chuck power ($0\;{\sim}\;150\;W$), chamber pressure ($5\;{\sim}\;15\;mTorr$) and gas composition of $BCl_3/Ar\;and\;BCl_3/Ne$. Total gas flow was fixed at 20 sccm (standard cubic centimeter per minute). Increase of ICP source power and RIE chuck power raised etch rate of InGaP, while that of chamber pressure reduced etch rate. We also found that some addition of Ar and Ne in $BCl_3$ plasma improved etch rate of InGaP. InGaP etch rate was varied from $1580\;{\AA}/min$ with pure $BC_3\;to\;2800\;{\AA}/min$ and $4700\;{\AA}/min$ with 25 % Ar and Ne addition, respectively. Other process conditions were fixed at 300 W ICP source power, 100 W RIE chuck power and 7.5 mTorr chamber pressure. SEM (scanning electron microscopy) and AFM (atomic force microscopy) data showed vertical side wall and smooth surface of InGaP at the same condition. Proper addition of noble gases Ar and Ne (less than about 50 %) in $BCl_3$ inductively coupled plasma have resulted in not only increase of etch rate but also minimum preferential loss and smooth surface morphology by ion-assisted effect.

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Comparison of sample preparation procedures of inductively coupled plasma to measure elements in dog's hair

  • Chun, Ju Lan;Bang, Han Tae;Ji, Sang Yun;Jeong, Jin Young;Kim, Minji;Kim, Byeonghyeon;Lee, Sung Dae;Lee, Yoo Kyung;Reddy, Kondreddy Eswar;Kim, Ki Hyun
    • Journal of Animal Science and Technology
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    • v.62 no.1
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    • pp.58-63
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    • 2020
  • The pre-treatment condition affects on the element analysis of inductively coupled plasma (ICP). In this study the pre-treatment condition of ICP has been studied to quantify elements in dog's hair. The hair samples were collected from twelve female Beagles by clipping them into 1 or 2 cm at the back neck. The qualitative and quantitative analysis of elements in hairs were performed by using ICP. By ICP nine elements were qualitatively detected and quantitatively analyzed (Ca, Cu, Fe, K, Mg, Na, P, Se, Zn). The measured amounts of elements were compared between 3 step and 2 step procedures which were with and without the acetone based washing step. The quantitative analysis showed that the concentrations of K, Na, P, and Se were significantly decreased in hair samples with acetone-based washing (p < 0.005 or 0.001) unlike those without the acetone-based washing. It implied that some minerals are lost by the acetone based washing during the sample preparation step. Therefore, the acetone based washing process is not suitable for quantifying elements in dog's hair. In addition, the results of qualitative and quantitative analysis were compared. Although there was a difference in absolute values of elemental contents in hair, the results of qualitative and quantitative analysis were significantly correlated each other. This finding suggested that the results of qualitative analysis can be used to monitor elemental contents in dog's hair.

A Chemical Kinetic Model Including 54 Reactions for Modeling Air Nonequilibrium Inductively Coupled Plasmas

  • Yu, Minghao;Wang, Wei;Yao, Jiafeng;Zheng, Borui
    • Journal of the Korean Physical Society
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    • v.73 no.10
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    • pp.1519-1528
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    • 2018
  • The objective of the present study is the development of a comprehensive air chemical kinetic model that includes 11 species and 54 chemical reactions for the numerical investigation of air nonequilibrium inductively coupled plasmas. The two-dimensional, compressible Navier-Stokes equations coupled with the electromagnetic-field equations were employed to describe the fundamental characteristics of an inductive plasma. Dunn-Kangs 32 chemical-reaction model of air was reconstructed and used as a comparative model. The effects of the different chemical kinetic models on the flow field were analyzed and discussed at identical/different working pressures. The results theoretically indicate that no matter the working pressure is low or high, the use of the 54 chemical kinetic model presented in this study is a better choice for the numerical simulation of a nonequilibrium air ICP.

Effect of RF Bias on Electron Energy Distributions and Plasma Parameters in Inductively Coupled Plasma (유도 결합 플라즈마에서 플라즈마 변수와 전자 에너지 분포에 대한 극판 전력 인가의 영향)

  • Lee, Hyo-Chang;Chung, Chin-Wook
    • Journal of the Korean Vacuum Society
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    • v.21 no.3
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    • pp.121-129
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    • 2012
  • RF biased inductively coupled plasma (ICP) is widely used in semiconductor and display etch processes which are based on vacuum science. Up to now, researches on how rf-bias power affects have been focused on the controls of dc self-bias voltages. But, effect of RF bias on plasma parameters which give a crucial role in the processing result and device performance has been little studied. In this work, we studied the correlation between the RF bias and plasma parameters and the recent published results were included in this paper. Plasma density was changed with the RF bias power and this variation can be explained by simple global model. As the RF bias was applied to the ICP, increase in the electron temperature from the electron energy distribution was measured indicating electron heating. Plasma density uniformity was enhanced with the RF bias power. This study can be helpful for the control of the optimum discharge condition, as well as the basic understanding for correlation between the RF bias and plasma parameters.

Mechanisms involved in modification of film structure and properties in ICP assisted dc and pulsed dc sputtering

  • Kusano, Eiji
    • Proceedings of the Korean Vacuum Society Conference
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    • 2015.08a
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    • pp.59.2-59.2
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    • 2015
  • Modification of film structure and properties in inductively-coupled plasma (ICP) assisted dc and pulsed dc sputtering has been reported by Oya and Kusano [1] and by Sakamoto, Kusano, and Matsuda [2], showing drastic changes in films structure and properties by the ICP assistance in particular to the pulsed dc discharge. Although mechanisms involved in the modification has been reported to be the increase in energy transferred to the substrate, details of effects of low-energy ion bombardment on the modification and origin of an anomalous increase in the ion quantity by the ICP assistance to the pulsed dc discharge have not been discussed. In this presentation, mechanisms involved in film structure and property modification in ICP assisted dc and pulsed dc sputtering, in which a number of low-energy ions are formed, will be discussed based on ion energy distribution as well as effectiveness of energy transfer to the substrate by low energy particles [3]. The results discussed in this presentation will emphasize the fact that the energetic particles playing an important role in the film structure modification are those to be deposited, but not those of inert gas, when their energies range in less than 100 eV in the pressure range of magnetron sputtering.

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