Mechanisms involved in modification of film structure and properties in ICP assisted dc and pulsed dc sputtering

Modification of film structure and properties in inductively-coupled plasma (ICP) assisted dc and pulsed dc sputtering has been reported by Oya and Kusano [1] and by Sakamoto, Kusano, and Matsuda [2], showing drastic changes in films structure and properties by the ICP assistance in particular to the pulsed dc discharge. Although mechanisms involved in the modification has been reported to be the increase in energy transferred to the substrate, details of effects of low-energy ion bombardment on the modification and origin of an anomalous increase in the ion quantity by the ICP assistance to the pulsed dc discharge have not been discussed. In this presentation, mechanisms involved in film structure and property modification in ICP assisted dc and pulsed dc sputtering, in which a number of low-energy ions are formed, will be discussed based on ion energy distribution as well as effectiveness of energy transfer to the substrate by low energy particles [3]. The results discussed in this presentation will emphasize the fact that the energetic particles playing an important role in the film structure modification are those to be deposited, but not those of inert gas, when their energies range in less than 100 eV in the pressure range of magnetron sputtering.