Study of Dry Etching of SnO thin films using a Inductively Coupled Plasma
![]() |
Kim, Su-Kon
(National Institute for Nanomaterials Technology)
Park, Byung-Ok (School of Materials Science and Engineering, Kyungpook National University) Lee, Joon-Hyung (School of Materials Science and Engineering, Kyungpook National University) Kim, Jeong-Joo (School of Materials Science and Engineering, Kyungpook National University) Heo, Young-Woo (School of Materials Science and Engineering, Kyungpook National University) |
1 |
P. W. Sadik, M. Ivill, V. Craciun , and D.P. Norton, Electrical transport and structural study of |
2 | H. Shimotani, H. Suzuki, K. Ueno, M. Kawas, Y. Iwasa, p-type field-effect transistor of NiO with electric double-layer gating, Appl. Phys. Lett. 92, (2008) 242107. DOI |
3 | Y. Ogo, H. Hiramatsu, K. Nomura, H. Yanagi, T. Kamiya, M. Hirano, H. Hosono, p-channel thin-film transistor using p-type oxide semiconductor, SnO, Appl. Phys. Lett. 93, (2008) 032113. DOI |
4 |
S. Y. Kim, J. C. Lee, I. S. Choi, J. H. Lee, J. J. Kim, Y. W. Heo, Growth of Mg Doped |
5 | K. C. Yang, S. W. Park, T. H. Shin, G. Y. Yeom, Application of Pulsed Plasmas for Nanoscale Etching of Semiconductor Devices : A Review, J. Kor. Inst. Surf. Eng. 48, (2015) 360-370. DOI |
6 |
J. C. Park, O. G. Jeong, J. K. Kim, Comparison of chlorine- and fluorine-based inductively coupled plasmas for dry etching of |
7 |
K. Kim, Alexander Efremov, Junmyung Lee, Etching mechanisms of (In, Ga, Zn)O thin films in |
8 |
K. H. Kwon, Alexander Efremov, Moonkeun Kim, Nam Ki Min, Jaehwa Jeong, and Kwangsoo Kim, Etching Characteristics of |
9 | H. R. Kim, J. B. Kim, Y. S. Choi, Electrical, Optical and Structural Properties of AZO Thin Film Deposited Using Facing Targets Magnetron Sputtering System with Inductively Coupled Plasma, Sci. Adv. Mater. 7 (2015) 107-112. DOI |
10 | S. H. Choi, M. K. Han, Effect of channel widths on negative shift of threshold voltage, including stress-induced hump phenomenon in InGaZnO thin-film transistors under high-gate and drain bias stress, Appl. Phys. Lett. 100, (2012) 043503. DOI |
11 | K. C. Lee, K. M. Jo, J. H. Lee, J. J. Kim, Y. W. Heo, Electrical and Optical Properties of Amorphous ITZO Deposited at Room Temperature by RF Magnetron Sputtering, J. Kor. Inst. Surf. Eng. 47 (2014) 239-243. DOI |
12 | K. Ebata, S. Tomai, Y. Tsuruma, T. Iitsuka, Shigeo Matsuzaki, Koki Yano, High-Mobility Thin-Film Transistors with Polycrystalline In-Ga-O Channel Fabricated by DC Magnetron Sputtering, Appl. Phys Express, 5 (2012) 011102. DOI |
13 | S. J. Hong, J. I. Han, Synthesis and characterization of indium tin oxide (ITO) nano-particle using gas evaporation process, J. Electro-ceram. 17, (2006) 821-826. DOI |
14 |
C. L. A. Ricardo, M. D'Incau, M. Leoni, C. Malerba, A. Mittiga, P. Scardi, Structural properties of RF-magnetron sputtered |
15 | K. K. Kim, H. S. Kim, D. K. Hwang, J. H. Lim, S. J. Park, Realization of p-type ZnO thin films via phosphorus doping and thermal activation of the dopant, Appl. Phys. Lett. 83, (2003) 63-65. DOI |
16 |
M. Snure, A. Tiwari, |
![]() |