• The Magazine of the IEIE
• /
• v.42 no.7
• /
• pp.45-53
• /
• 2015

Power 소자 기술은 digital & mixed signal device와 on-chip 구현을 위해서 CMOS 공정에 대한 기본 이해가 필요하다. CMOS 공정 기반 위에 power device 공정을 추가하면서 다양한 operation voltage의 power 소자를 구현하고, passive device 들을 동일 공정에서 구현하여 다양한 components 들로 power IC 제품을 design 할 수 있도록 modular process를 제공하는 것이 중요하다. 또한 power device로 주로 사용되는 LDMOS 소자에 대한 performance 개선을 위해 simulation을 통해 key device parameter들의 특성을 예측하고, 구조를 설계하는 것이 Si process 전에 중요한 일 중의 하나이다. 아울러 power management가 potable power, consumer electronics 및 green energy에서 가장 빠르게 성장하는 분야이므로, 차별화된 power 소자 기술을 확보하여 급변하는 시장 환경에 대응하는 것이 필요하다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2001.07a
• /
• pp.267-270
• /
• 2001

A new small scaling Lateral Trench Insulated Gate Bipolar Transistor (SSLTIGBT) was proposed to improve the characteristics of the device. The entire electrode of the LTIGBT was replaced with a trench-type electrode. The LTIGBT was designed so that the width of device was no more than 10$\mu\textrm{m}$. The latch-up current densities were improved by 4.5 and 7.6 times, respectively, compared to those of the same sifted conventional LTIGBT and the conventional LTIGBT which has the width of 17$\mu\textrm{m}$. The enhanced latch-up capability of the SSLTIGBT was obtained due to the fact that the hole current in the device reaches the cathode via the p+ cathode layer underneath the n+ cathode layer, directly. The forward blocking voltage of the SSLTIGBT was 125 V. At the same size, those of the conventional LTIGBT and the conventional LTIGBT with the width of 17$\mu\textrm{m}$ were 65 V and 105 V, respectively. Because the proposed device was constructed of trench-type electrodes, the electric field in the device were crowded to trench oxide. Thus, the punch through breakdown of LTEIGBT occurred late.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.17 no.1
• /
• pp.27-30
• /
• 2004

In this paper, a new small size Lateral Trench Electrode Power MOSFET is proposed. This new structure, called "LTEMOSFET"(Lateral Trench Electrode Power MOSFET), is based on the conventional MOSFET. The entire electrode of LTEMOSFET is placed in trench oxide. The forward blocking voltage of the proposed LTEMOSFET is improved by 1.6 times with that of the conventional MOSFET. The forward blocking voltage of LTEMOSFET is 250V. At the same size, a increase of the forward blocking voltage of about 1.6 times relative to the conventional MOSFET is observed by using TMA-MEDICI which is used for analyzing device characteristics. Because the electrodes of the proposed device are formed in trench oxide, the electric field in the device are crowded to trench oxide. We observed that the characteristics of the proposed device was improved by using TMA-MEDICI and that the fabrication of the proposed device is possible by using TMA-TSUPREM4.

• 전자공학회논문지 IE
• /
• v.47 no.4
• /
• pp.1-9
• /
• 2010

This paper describes a ultrasonic signal processing front-end IC for distance range meter and body detector. The burst shaped ultrasonic signal is generated by a self oscillator and its frequency range is about 40[kHz]-300[kHz]. The generated ultrasonic signal transmit through piezo resonator. The another piezo device transduce from received ultrasonic signal to electrical signals. This front-end IC contained low noise amplifier, band pass filter, busrt detector and time pulse generator and so on. This IC has two type of new idea for improve function and performance, which are self frequency control (SFC) and Variable Gain Control amplifier (VGC) scheme. The dimensions and number of external parts are minimized in order to get a smaller hardware size. This device has been fabricated in a O.6[um] double poly, double metal 40[V] High Voltage CMOS process.

• Proceedings of the IEEK Conference
• /
• 2005.11a
• /
• pp.937-940
• /
• 2005

In this paper, the design of high current and high performance Regulatior IC using BCD Technology are presented. We design the 5A class regulator IC including the VDMOS Pass Tr. of N-sink array structure. Also, to obtain the high current and low power characteristics, the PMOS and BJT device are adapted for the Pass Tr. It is shown that simulation results of Regulator IC with VDMOS Pass Tr. have the Iout=4.5092A, LDO=7.3mV.

• Journal of the Microelectronics and Packaging Society
• /
• v.24 no.1
• /
• pp.35-43
• /
• 2017

The three-dimensional integrated circuit (3D-IC) is a general trend for the miniaturized and high-performance electronic devices. The through-silicon-via (TSV) is the advanced interconnection method to achieve 3D integration, which uses vertical metal via through silicon substrate. However, the TSV based 3D-IC undergoes severe thermo-mechanical stress due to the CTE (coefficient of thermal expansion) mismatch between via and silicon. The thermo-mechanical stress induces mechanical failure on silicon and silicon-via interface, which reduces the device reliability. In this paper, the thermo-mechanical reliability of TSV based 3D-IC is reviewed in terms of mechanical fracture, heat conduction, and material characteristic. Furthermore, the state of the art via-level and package-level design techniques are introduced to improve the reliability of TSV based 3D-IC.

• Journal of the Semiconductor & Display Technology
• /
• v.12 no.4
• /
• pp.27-32
• /
• 2013

In this paper, the boost converter was implemented by digital control in many applications of the step-up. The PWM(pulse width modulation) control module of boost converter was digitized at power converter using the FPGA device and VHDL. The boost converter was designed to output a fixed voltage through the PI control algorithm of the PWM control module even if input voltage and output load are variable. The boost converter was digitized can be simplified by reducing the size of the module and the external control components. Thus, the digital power IC has advantageous for weight reduction and miniaturization of electronic products because it can be controlled remotely by setting the desired output voltage and PWM control module. The boost converter using the digital power IC was confirmed through experiments and the good performances were showed from experiment results.

• Journal of IKEEE
• /
• v.18 no.4
• /
• pp.586-592
• /
• 2014

In this paper, high efficiency power management IC(PMIC) with DT-CMOS(Dynamic threshold voltage Complementary MOSFET) switching device is presented. PMIC is controlled PWM control method in order to have high power efficiency at high current level. The DT-CMOS switch with low on-resistance is designed to decrease conduction loss. The control parts in Buck converter, that is, PWM control circuit consist of a saw-tooth generator, a band-gap reference(BGR) circuit, an error amplifier, comparator circuit, compensation circuit, and control block. The saw-tooth generator is made to have 1.2MHz oscillation frequency and full range of output swing from supply voltage(3.3V) to ground. The comparator is designed with two stage OP amplifier. And the error amplifier has 70dB DC gain and $64^{\circ}$ phase margin. DC-DC converter, based on current mode PWM control circuits and low on-resistance switching device, achieved the high efficiency nearly 96% at 100mA output current. And Buck converter is designed along LDO in standby mode which fewer than 1mA for high efficiency. Also, this paper proposes two protection circuit in order to ensure the reliability.

• Journal of rehabilitation welfare engineering & assistive technology
• /
• v.1 no.1
• /
• pp.7-11
• /
• 2007

A compass device which indicates the right direction using the recorded voice was developed to assist the people who are blind when they are walking and moving to somewhere. The developed voice compass consists of a sensing module which recognizes the terrestrial magnetism with magnetic sensor, voice recorder IC, speaker and microprocessor which controlled all the components. It has 32 directions resolution and can continuously indicates the progressing direction with established time interval for the user convenience. It can help walking of the blind people and designed to be used in various sports and leisure. The performance of the developed device was verified by experiment with person who are blind.

• ETRI Journal
• /
• v.25 no.3
• /
• pp.195-202
• /
• 2003

This paper proposes a new LDMOSFET structure with a trenched sinker for high-power RF amplifiers. Using a low-temperature, deep-trench technology, we succeeded in drastically shrinking the sinker area to one-third the size of the conventional diffusion-type structure. The RF performance of the proposed device with a channel width of 5 mm showed a small signal gain of 16.5 dB and a maximum peak power of 32 dBm with a power-added efficiency of 25% at 2 GHz. Furthermore, the trench sinker, which was applied to the guard ring to suppress coupling between inductors, showed an excellent blocking performance below -40 dB at a frequency of up to 20 GHz. These results confirm that the proposed trenched sinker should be an effective technology both as a compact sinker for RF power devices and as a guard ring against coupling.