• Title/Summary/Keyword: IC circuit

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Design of a Low-Power CMOS Fractional-N Frequency Synthesizer for 2.4GHz ISM Band Applications (2.4GHz ISM 대역 응용을 위한 저전력 CMOS Fractional-N 주파수합성기 설계)

  • Oh, Kun-Chang;Kim, Kyung-Hwan;Park, Jong-Tae;Yu, Chong-Gun
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.45 no.6
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    • pp.60-67
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    • 2008
  • A low-power 2.4GHz fractional-N frequency synthesizer has been designed for 2.4GHz ISM band applications such as Bluetooth, Zigbee, and WLAN. To achieve low-power characteristic, the design has been focused on the power optimization of power-hungry blocks such as VCO, prescaler, and ${\Sigma}-{\Delta}$ modulator. An NP-core type VCO is adopted to optimize both phase noise and power consumption. Dynamic D-F/Fs with no static DC current are employed in designing the low-power prescaler circuit. The ${\Sigma}-{\Delta}$ modulator is designed using a modulus mapping circuit for reducing hardware complexity and power consumption. The designed frequency synthesizer which was fabricated using a $0.18{\mu}m$ CMOS process consumes 7.9mA from a single 1.8V supply voltage. The experimental results show that a phase noise of -118dBc/Hz at 1MHz offset, the reference spur of -70dBc at 25MHz offset, and the channel switching time of $15{\mu}s$ over 25MHz transition have been achieved. The designed chip occupies an area of $1.16mm^2$ including pads where the core area is only $0.64mm^2$.

Highly Linear 1 W Power Amplifier MMIC for the 900 MHz Band Using InGaP/GaAs HBT (InGaP/GaAs HBT를 이용한 900 MHz 대역 1 W급 고선형 전력 증폭기 MMIC 설계)

  • Joo, So-Yeon;Han, Su-Yeon;Song, Min-Geun;Kim, Hyung-Chul;Kim, Min-Su;Noh, Sang-Youn;Yoo, Hyung-Mo;Yang, Youn-Goo
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.22 no.9
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    • pp.897-903
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    • 2011
  • This paper presents a highly linear power amplifier MMIC, having an output power level of about 1 watt, based on InGaP/GaAs hetero-junction bipolar transistor(HBT) technology for the 900 MHz band. The active bias circuit is applied to minimize the effect of temperature variation. Ballast resistors are optimized to prevent a current collapse and a thermal runaway. The fabricated power amplifier exhibited a gain of 17.6 dB, an output P1dB of 30 dBm, and a PAE of 44.9 % at an output P1dB from the one-tone excitation. It also showed a very high OIP3 of 47.3 dBm at an average output power of 20 dBm from the two-tone excitation.

Automatic On-Chip Glitch-Free Backup Clock Changing Method for MCU Clock Failure Protection in Unsafe I/O Pin Noisy Environment (안전하지 않은 I/O핀 노이즈 환경에서 MCU 클럭 보호를 위한 자동 온칩 글리치 프리 백업 클럭 변환 기법)

  • An, Joonghyun;Youn, Jiae;Cho, Jeonghun;Park, Daejin
    • Journal of the Institute of Electronics and Information Engineers
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    • v.52 no.12
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    • pp.99-108
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    • 2015
  • The embedded microcontroller which is operated by the logic gates synchronized on the clock pulse, is gradually used as main controller of mission-critical systems. Severe electrical situations such as high voltage/frequency surge may cause malfunctioning of the clock source. The tolerant system operation is required against the various external electric noise and means the robust design technique is becoming more important issue in system clock failure problems. In this paper, we propose on-chip backup clock change architecture for the automatic clock failure detection. For the this, we adopt the edge detector, noise canceller logic and glitch-free clock changer circuit. The implemented edge detector unit detects the abnormal low-frequency of the clock source and the delay chain circuit of the clock pulse by the noise canceller can cancel out the glitch clock. The externally invalid clock source by detecting the emergency status will be switched to back-up clock source by glitch-free clock changer circuit. The proposed circuits are evaluated by Verilog simulation and the fabricated IC is validated by using test equipment electrical field radiation noise

Study on the Design of S/PDIF BC which Can Operate without PLL (PLL없이 동작하는 S/PDIF IC 설계에 관한 연구)

  • Park Ju-Sung;Kim Suk-Chan;Kim Kyoung-Soo
    • The Journal of the Acoustical Society of Korea
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    • v.24 no.1
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    • pp.11-20
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    • 2005
  • In this paper, we deal with the research about a S/PDIF (Sony Philips Digital Interface) receiver which can operate without PLL (Phase Locked Loop) circuits. Although a S/PDIF receiver is used in most audio devices and audio processors in these days. yet there are only few domestic researches about S/PDIF. Currently used commercial DACs (Digital-to-Analog Converters) which can decode S/PDIF signals, have a PLL circuit inside them. The PLL makes it possible to extract clock information from S/PDIF digital signal and to synchronize a clock signal with input signals. But the PLL circuit makes many diffculties in designing the SOC (System On Chips) of VLSIs (Vew Large Scale Integrated Ciruits) because it is an "analog circuit". We proposed a S/PDIF receiver which doesn't have PLL circuits and only has Pure digital circuits. The key idea of the proposed S/PDIF receiver. is to use the ratio between a 16 MHz basic input clock and S/PDIF signals. After having decoded hundreds thousands S/PDIF inputs, it went to prove that a S/PDIF receiver can be designed with pure digital circuits and without any analog circuits such as PLL circuits. We have confidence that the proposed S/PDIF receiver can be used as an IP (Intellectual Property) for the SOC design of the digital circuits.

Deign of Small-Area Differential Paired eFuse OTP Memory for Power ICs (Power IC용 저면적 Differential Paired eFuse OTP 메모리 설계)

  • Park, Heon;Lee, Seung-Hoon;Jin, Kyo-Hong;Ha, Pan-Bong;Kim, Young-Hee
    • The Journal of Korea Institute of Information, Electronics, and Communication Technology
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    • v.8 no.2
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    • pp.107-115
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    • 2015
  • In this paper, a small-area 32-bit differential paired eFuse OTP memory for power ICs is designed. In case of smaller number of rows than that of columns for the OTP memory cell array, a scheme for the cell array reducing the number of SL driver circuits requiring their larger layout areas by routing the SL (source line) lines supplying programming currents for eFuse links in the row direction instead of the column direction as well as a core circuit is proposed. In addition, to solve a failure of being blown for non-blown eFuse links by the electro-migration phenomenon, a regulated voltage of V2V ($=2V{\pm}0.2V$) is used to a RWL (read word line) driver circuit and a BL (bit line) pull-up driver circuit. The layout size of the designed 32-bit eFuse OTP memory is $228.525{\mu}m{\times}105.435{\mu}m$, which is confirmed to be 20.7% smaller than that of the counterpart using the conventional cell array routing, namely $197.485{\mu}m{\times}153.715{\mu}m$.

A Method of Inspecting ITO Pattern and Node Using Measured Data of Each Node's Mutual Capacitance ITO Sensor (상호 유도 정전하 방식 ITO 센서의 노드별 측정 데이터를 이용한 ITO패턴과 노드 검사 방법)

  • Han, Joo-Dong;Moon, Byoung-Joon;Choi, Kyung-Jin;Kim, Dong-Han
    • Journal of the Institute of Electronics and Information Engineers
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    • v.51 no.7
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    • pp.230-238
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    • 2014
  • In this paper, we propose the possible way of accurate analysis and examination of ITO sensor to discriminate whether mutual capacitance ITO sensor is defective by using mutual capacitance of data in each node which consists of electrodes inside of ITO sensor. We have analyzed the structure characteristic of mutual capacitance ITO sensor which is used as an input device for not only small size electronics like mobile phone and tablets but also big size electronics and designed the circuit to inspect ITO sensor using touch screen panel IC. Set a variable related with mutual capacitance of charge and discharge and Implement to find and analyze accurate position when defect is made through the data from each node of ITO sensor. First, we can set a yield effective range through the first experiment data of mutual capacitance ITO sensor and by using the data of each node of ITO sensor which is the result from the second experiment, we can verify accuracy and effectiveness of effective range from the first experiment as a sample which is used in this experiment.

Double-Gauss Optical System Design with Fixed Magnification and Image Surface Independent of Object Distance (물체거리가 변하여도 배율과 상면이 고정되는 이중 가우스 광학계의 설계)

  • Ryu, Jae Myung;Ryu, Chang Ho;Kim, Kang Min;Kim, Byoung Young;Ju, Yun Jae;Jo, Jae Heung
    • Korean Journal of Optics and Photonics
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    • v.29 no.1
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    • pp.19-27
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    • 2018
  • A change in object distance would generally change the magnification of an optical system. In this paper, we have proposed and designed a double-Gauss optical system with a fixed magnification and image surface regardless of any change in object distance, according to moving the lens groups a little bit to the front and rear of the stop, independently parallel to the direction of the optical axis. By maintaining a constant size of image formation in spite of various object-distance changes in a projection system such as a head-up display (HUD) or head-mounted display (HMD), we can prevent the field of view from changing while focusing in an HUD or HMD. Also, to check precisely the state of the wiring that connects semiconductor chips and IC circuit boards, we can keep the magnification of the optical system constant, even when the object distance changes due to vertical movement along the optical axis of a testing device. Additionally, if we use this double-Gauss optical system as a vision system in the testing process of lots of electronic boards in a manufacturing system, since we can systematically eliminate additional image processing for visual enhancement of image quality, we can dramatically reduce the testing time for a fast test process. Also, the Gaussian bracket method was used to find the moving distance of each group, to achieve the desired specifications and fix magnification and image surface simultaneously. After the initial design, the optimization of the optical system was performed using the Synopsys optical design software.

Implementation of AC Direct Driver Circuit for Ultra-slim LED Flat Light System (초슬림 LED 면조명 기구용 교류 직결형 구동 회로 구현)

  • Cho, Myeon-Gyun;Choi, Hyo-Sun;Yoon, Dal-Hwan
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.13 no.9
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    • pp.4177-4185
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    • 2012
  • LEDs are becoming the most suitable candidate replacing traditional fluorescent lamps because of its eco-friendly characteristics. LEDs are also actively used to design green building system and to make outdoor billboard as a back-light system due to its high energy efficiency. In this paper, we have developed AC direct driver for $12{\times}12$ FLB(flexible LED board) and LED flat light without SMPS. It has LID-PC-R101B driver IC that can support the high power factor and be composed of LED switching circuit in group. Also, an elaborate system designs can guarantee a high luminous efficiency, a high reliability and a low power consumption. The proposed FLB has the ultra slim shape of $450{\times}450$ mm, width of 4 mm and weight of 280 g. In the end, we have developed a prototype of FLB for billboard and flat light for room lighting with AC direct driver iposrder to verify the performance of the proposed system.

A3V 10b 33 MHz Low Power CMOS A/D Converter for HDTV Applications (HDTV 응용을 위한 3V 10b 33MHz 저전력 CMOS A/D 변환기)

  • Lee, Kang-Jin;Lee, Seung-Hoon
    • Journal of IKEEE
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    • v.2 no.2 s.3
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    • pp.278-284
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    • 1998
  • This paper describes a l0b CMOS A/D converter (ADC) for HDTV applications. The proposed ADC adopts a typical multi-step pipelined architecture. The proposed circuit design techniques are as fo1lows: A selective channel-length adjustment technique for a bias circuit minimizes the mismatch of the bias current due to the short channel effect by supply voltage variations. A power reduction technique for a high-speed two-stage operational amplifier decreases the power consumption of amplifiers with wide bandwidths by turning on and off bias currents in the suggested sequence. A typical capacitor scaling technique optimizes the chip area and power dissipation of the ADC. The proposed ADC is designed and fabricated in s 0.8 um double-poly double-metal n-well CMOS technology. The measured differential and integral nonlinearities of the prototype ADC show less than ${\pm}0.6LSB\;and\;{\pm}2.0LSB$, respectively. The typical ADC power consumption is 119 mW at 3 V with a 40 MHz sampling rate, and 320 mW at 5 V with a 50 MHz sampling rate.

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[ $8{\sim}10.9$ ]-GHz-Band New LC Oscillator with Low Phase-Noise and Wide Tuning Range for SONET communication (SONET 통신 시스템을 위한 $8{\sim}10.9$ GHz 저 위상 잡음과 넓은 튜닝 범위를 갖는 새로운 구조의 LC VCO 설계)

  • Kim, Seung-Hoon;Cho, Hyo-Moon;Cho, Sang-Bock
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.45 no.1
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    • pp.50-55
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    • 2008
  • In this paper, New LC VCO with $8{\sim}10.9$ GHz Band has been designed using commercial $0.35-{\mu}m$ CMOS technology. This proposed circuit is consisted of the parallel construction of the typical NMOS and PMOS cross-coupled pair which is based on the LC tank, MOS cross-coupled pair which has same tail current of complementary NMOS and PMOS, and output buffer. The designed LC VCO, which is according to proposed structure in this paper, takes a 29% improvement of the wide tuning range as 8 GHz to 10.9 GHz, and a 6.48mW of low power dissipation. Its core size is $270{\mu}m{\times}340{\mu}m$ and its phase noise is as -117dBc Hz and -137dBc Hz at 1-MHz and 10-MHz offset, respectively. FOM of the new proposed LC VCO gets -189dBc/Hz at a 1-MHz offset from a 10GHz center frequency. This design is very useful for the 10Gb/s clock generator and data recovery integrated circuit(IC) and SONET communication applications.