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http://dx.doi.org/10.5515/KJKIEES.2011.22.9.897

Highly Linear 1 W Power Amplifier MMIC for the 900 MHz Band Using InGaP/GaAs HBT  

Joo, So-Yeon (School of Information and Communication Engineering, Sungkyunkwan University)
Han, Su-Yeon (School of Information and Communication Engineering, Sungkyunkwan University)
Song, Min-Geun (School of Information and Communication Engineering, Sungkyunkwan University)
Kim, Hyung-Chul (School of Information and Communication Engineering, Sungkyunkwan University)
Kim, Min-Su (School of Information and Communication Engineering, Sungkyunkwan University)
Noh, Sang-Youn (School of Information and Communication Engineering, Sungkyunkwan University)
Yoo, Hyung-Mo (School of Information and Communication Engineering, Sungkyunkwan University)
Yang, Youn-Goo (School of Information and Communication Engineering, Sungkyunkwan University)
Publication Information
The Journal of Korean Institute of Electromagnetic Engineering and Science / v.22, no.9, 2011 , pp. 897-903 More about this Journal
Abstract
This paper presents a highly linear power amplifier MMIC, having an output power level of about 1 watt, based on InGaP/GaAs hetero-junction bipolar transistor(HBT) technology for the 900 MHz band. The active bias circuit is applied to minimize the effect of temperature variation. Ballast resistors are optimized to prevent a current collapse and a thermal runaway. The fabricated power amplifier exhibited a gain of 17.6 dB, an output P1dB of 30 dBm, and a PAE of 44.9 % at an output P1dB from the one-tone excitation. It also showed a very high OIP3 of 47.3 dBm at an average output power of 20 dBm from the two-tone excitation.
Keywords
Power Amplifier Integrated Circuit; PA Driver IC; InGaP/GaAs HBT; Active Bias Circuit; MMIC;
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