• Journal of the Korean Society of Environmental Restoration Technology
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• v.13 no.5
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• pp.59-80
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• 2010

This research This research aims at developing systemic evaluation model in terms of biotope preservation through reports, literatures, and expert survey analysis by implementing biotope structure analysis in area level with selecting Hyunpoong and Yuga-myeon, Dalseong county, Daegu metropolitan city as a site. First of all, as a result of biotope type classification of research site, biotope type groups are classified into total 13, and its biotope types are divided into total 61. Also, as a result of literature analysis, total 18 items are drawn such as diversity of biotope typical species as a index item to assess the preservation value of biotope, and the first evaluation index are divided into 10 and the second ones are divided into 8 according to characteristic of index items. As a result of expert survey analysis, All 10 index items, first evaluation index, show high importance average (above 4.7). As a result of implementation of main cause for categorizing evaluation index by characteristic, there are 3 factors such as 'obstructive factor.' Based on above survey analysis result, as a result of estimating the weight of each item, 'restoration factor' showed the highest, 3.4541, but 'factor of habitat stability' showed 3.1468, which is the lowest The systemic value evaluation was set by comprehensively analyzing these results. As a result of biotope preservation value evaluation through applying research site, total 19 types which are abundant in vegetation are classified into I class, 12 types in II class, 5 types in III class, 10 types in IV class, and 15 types in V class respectively. Lastly, as a result of second evaluation, it is analyzed that there are 17 special meaningful space to preserve species and biotope(1a, 1b) and 61 meaningful space to preserve species (2a, 2b, 2c).

• Journal of the Korea Institute of Information and Communication Engineering
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• v.19 no.12
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• pp.2899-2904
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• 2015

This paper introduces about the effect on $I_{DS}-V_{GS}$ characteristic of transistor that interface trap charge is created by damage due to heat in a 3D sequential inverter. A interface trap charge distribution in oxide layer in a 3D sequential inverter is extracted using two-dimensional device simulator. The variation of threshold voltage of top transistor according to the gate voltage variation of bottom transistor is also described in terms of Inter Layer Dielectric (ILD) length of 3D sequential inverter, considering the extracted interface trap charge distribution. The extracted interface trap density distribution shows that the bottom $HfO_2$ layer and both the bottom and top $SiO_2$ layer were relatively more affected by heat than the top $HfO_2$ layer with latest process. The threshold voltage variations of the shorter length of ILD in 3D sequential inverter under 50nm is higher than those over 50nm. The $V_{th}$ variation considering the interface trap charge distribution changes less than that excluding it.

• Microbiology and Biotechnology Letters
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• v.49 no.3
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• pp.391-402
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• 2021

Earthworms play an important role in soil fertilization, interacting continually with microorganisms. This study aims to demonstrate the existence of beneficial microorganisms living in the earthworm's immune system, the coelomic fluid. To achieve this goal, a molecular identification technique was performed, using cytochrome c oxidase I (COI) barcoding to identify abundant endogenic earthworms inhabiting the temperate zone of Rabat, Morocco. Then, 16S rDNA and ITS sequencing techniques were adopted for bacteria and fungi, respectively. Biochemical analysis, showed the ability of bacteria to produce characteristic enzymes and utilize substrates. Qualitative screening of plant growth-promoting traits, including nitrogen fixation, phosphate and potassium solubilization, and indole acetic acid (IAA) production, was also performed. The result of mitochondrial COI barcoding allowed the identification of the earthworm species Aporrectodea molleri. Phenotypic and genotypic studies of the sixteen isolated bacteria and the two isolated fungi showed that they belong to the Pseudomonas, Aeromonas, Bacillus, Buttiauxella, Enterobacter, Pantoea, and Raoultella, and the Penicillium genera, respectively. Most of the isolated bacteria in the coelomic fluid showed the ability to produce β-glucosidase, β-glucosaminidase, Glutamyl-β-naphthylamidase, and aminopeptidase enzymes, utilizing substrates like aliphatic thiol, sorbitol, and fatty acid ester. Furthermore, three bacteria were able to fix nitrogen, solubilize phosphate and potassium, and produce IAA. This initial study demonstrated that despite the immune property of earthworms' coelomic fluid, it harbors beneficial microorganisms. Thus, the presence of resistant microorganisms in the earthworm's immune system highlights a possible selection process at the coelomic fluid level.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.242-242
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• 2012

Transparent oxide semiconductors are increasingly becoming one of good candidates for high efficient channel materials of thin film transistors (TFTs) in large-area display industries. Compare to the conventional hydrogenated amorphous silicon channel layers, solution processed ZnO-TFTs can be simply fabricated at low temperature by just using a spin coating method without vacuum deposition, thus providing low manufacturing cost. Furthermore, solution based oxide TFT exhibits excellent transparency and enables to apply flexible devices. For this reason, this process has been attracting much attention as one fabrication method for oxide channel layer in thin-film transistors (TFTs). But, poor electrical characteristic of these solution based oxide materials still remains one of issuable problems due to oxygen vacancy formed by breaking weak chemical bonds during fabrication. These electrical properties are expected due to the generation of a large number of conducting carriers, resulting in huge electron scattering effect. Therefore, we study a novel technique to effectively improve the electron mobility by applying environmental annealing treatments with various gases to the solution based Li-doped ZnO TFTs. This technique was systematically designed to vary a different lithium ratio in order to confirm the electrical tendency of Li-doped ZnO TFTs. The observations of Scanning Electron Microscopy, Atomic Force Microscopy, and X-ray Photoelectron Spectroscopy were performed to investigate structural properties and elemental composition of our samples. In addition, I-V characteristics were carried out by using Keithley 4,200-Semiconductor Characterization System (4,200-SCS) with 4-probe system.

• JSTS:Journal of Semiconductor Technology and Science
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• v.17 no.2
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• pp.277-282
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• 2017

Nickel germanide (NiGe) is one of the most promising alloy materials for source/drain (S/D) of Ge MOSFETs. However, NiGe has limited thermal stability up to $450^{\circ}C$ which is a challenge for fabrication of Ge MOSFETs. In this paper, a novel method is proposed to improve the thermal stability of NiGe using Co interlayer. As a result, we found that the thermal stability of NiGe was improved from $450^{\circ}C$ to $570^{\circ}C$ by using the proposed Co interlayer. Furthermore, we found that current-voltage (I-V) characteristic was improved a little by using Co/Ni/TiN structure after post-annealing. Therefore, NiGe formed by the proposed Co interlayer that is, Co/Ni/TiN structure, is a promising technology for S/D contact of Ge MOSFETs.

• The Journal of the Acoustical Society of Korea
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• v.13 no.6
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• pp.31-44
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• 1994

The paper introduces several studies of various aspects of Korean phonology and phonetics for speech recognition and synthesis. The phonological and phonetic studies presented in this paper are : i) For a study of segmental phonology, we made an annotated list of Korean allophones and their corresponding alphabetic symbols to type into computers. ii) For a study of segmental phonetics, we present some acoustic regulations in Korean consonants according to their phonological environment within a word. iii) For a study of prosodic phonology, we suggest the phonological functions of prosodic features and their acoustic cues. iv) For a study of prosodic phonetics, we present the characteristic patterns of accent and intonation in Korean. v) Finally, we suggest some ways of using this phonological and phonetic knowledge for possible improvement of speech recognition and synthesis.

• Proceedings of the KIEE Conference
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• 2003.10a
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• pp.186-188
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• 2003

The ZnO surge arrester is the protective device for limiting surge voltages on equipment by diverting surge current and returning the device to its original status. The occurrence of overvoltage appears in any phase to AC power supply system and it appears in mixing AC and impulse voltages, moreover because HVDC power supply system uses converter in semiconductor, it makes mixed DC and high harmonics voltages. In this study, the various mixed AC and DC voltages was made for investigating the degradation effect of ZnO arrester according to mixed voltage. As a result, the increase of DC component to mixed voltages causes the increase of resistive component of total leakage current to ZnO block. In changing V-I curve for mixed voltages, the cross-over point acts a factor as making the proper capacitor size of an equivalent circuit for ZnO block.

• 한국신재생에너지학회:학술대회논문집
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• 2007.06a
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• pp.317-319
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• 2007

Recently, there were many researches for efficiency improvement of DSC. Among of these works, research of surface treatment is still a prerequisite for electron diffusion, light-harvesting and surface state of $DSC^{4)}$. Using of the surface treatment, it can be raise up porosity of $TiO_{2}$ nano-crystalline structure on $photo-electrode^{5)}$. There are chemical, physical, electrical and optical methods which raise up its porosity. In this paper, we have designed and manufactured MOPA-type ultrasonic circuit (100W, frequency and duty variable). Manufactured ultrasonic circuit to use to force cavity density and power into $TiO_{2}$ paste. Then, we have optimized forcing time, frequency and duty of ultrasonic irradiation for surface treatment of photo-electrode of DSC. In I-V characteristic test of DSC, ultrasonic and thermal treated DSC shows 19% improved its efficiency against established DSC.

• Nuclear Engineering and Technology
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• v.52 no.8
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• pp.1764-1770
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• 2020

The present work was mainly concerned with studying the operation of RC-phase shift oscillator based on MOSFET type 2N6660 under the influence of different temperature levels ranging from room temperature (25 ℃) up-to135 ℃ and gamma-irradiation up-to 3.5 kGy. In this concern, both the static (I-V) characteristic curves of MOSFET devices and the output signal of the proposed oscillator were recorded under ascending levels of both temperature and gamma-irradiation. From which, it is clearly shown that the drain current was decreased from 0.22 A, measured at 25 ℃, down to 0.163 A, at 135 ℃. On the other hand, its value was increased up-to 0.49 A, whenever the device was exposed to gamma-rays dose of 3.5 kGy. Considering RC-phase shift oscillator, the oscillation frequency and output pk-pk voltage were decreased whenever MOSFET device exposed to gamma radiation by ratio 54.9 and 91%, respectively. While, whenever MOSFET device exposed to temperature the previously mentioned parameters were shown to be decreased by ratio 2.07 and 46.2%.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.7
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• pp.615-621
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• 2005

The electrical stability against surge stress of varistors, which are composed of Zn-Pr-Co-Cr-Y oxide system, were investigated at different sintering times. As sintering time increases, the varistor voltage and nonlinear exponent decreased in the range of $279.6\~179.1$ and $52.5\~24.9$, respectively. On the contrary, the leakage current and dielectric dissipation factor increased in the range of $1.2\~9.8\;{\mu}A$ and 0.0461\~0.0651 with increase of sintering time. For all varistors, the variation rates of V-I characteristic parameters against surge stress were more strongly affected in order of varistor voltage ${\rightarrow}nonlnear$ $exponent{\rightarrow}leakage$ current. On the whole, the electrical stability against surge stress increased with increasing sintering time. Conclusively, it is assumed that the varistors sintered for 2 h exhibited comparatively good characteristics, in view of overall characteristics.