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http://dx.doi.org/10.1016/j.net.2020.01.017

Studying the operation of MOSFET RC-phase shift oscillator under different environmental conditions  

Ibrahim, Reiham O. (Physics Dept, Faculty of Women for Arts, Science, and Education, Ain-Shams Univ)
Abd El-Azeem, S.M. (Electronic Res. Lab (E.R.L), Faculty of Women for Arts, Science, and Education, Ain Shams Univ)
El-Ghanam, S.M. (Electronic Res. Lab (E.R.L), Faculty of Women for Arts, Science, and Education, Ain Shams Univ)
Soliman, F.A.S. (Nuclear Materials Authority)
Publication Information
Nuclear Engineering and Technology / v.52, no.8, 2020 , pp. 1764-1770 More about this Journal
Abstract
The present work was mainly concerned with studying the operation of RC-phase shift oscillator based on MOSFET type 2N6660 under the influence of different temperature levels ranging from room temperature (25 ℃) up-to135 ℃ and gamma-irradiation up-to 3.5 kGy. In this concern, both the static (I-V) characteristic curves of MOSFET devices and the output signal of the proposed oscillator were recorded under ascending levels of both temperature and gamma-irradiation. From which, it is clearly shown that the drain current was decreased from 0.22 A, measured at 25 ℃, down to 0.163 A, at 135 ℃. On the other hand, its value was increased up-to 0.49 A, whenever the device was exposed to gamma-rays dose of 3.5 kGy. Considering RC-phase shift oscillator, the oscillation frequency and output pk-pk voltage were decreased whenever MOSFET device exposed to gamma radiation by ratio 54.9 and 91%, respectively. While, whenever MOSFET device exposed to temperature the previously mentioned parameters were shown to be decreased by ratio 2.07 and 46.2%.
Keywords
Phase shift oscillator; MOSFET; Gamma-irradiation; Current; Voltage; And temperature;
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