JSTS:Journal of Semiconductor Technology and Science

The Institute of Electronics and Information Engineers (대한전자공학회)
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A Study on Thermal Stability Improvement in Ni Germanide/p-Ge using Co interlayer for Ge MOSFETs

  • Shin, Geon-Ho (Division of Electronics, Radio Science & Engineering, and Information Communications Engineering, Chungnam National University) ;
  • Kim, Jeyoung (Division of Electronics, Radio Science & Engineering, and Information Communications Engineering, Chungnam National University) ;
  • Li, Meng (Division of Electronics, Radio Science & Engineering, and Information Communications Engineering, Chungnam National University) ;
  • Lee, Jeongchan (Division of Electronics, Radio Science & Engineering, and Information Communications Engineering, Chungnam National University) ;
  • Lee, Ga-Won (Department of Electronics Engineering, Chungnam National University) ;
  • Oh, Jungwoo (School of Integrated Technology, Yonsei University) ;
  • Lee, Hi-Deok (Department of Electronics Engineering, Chungnam National University)
  • Received : 2016.08.25
  • Accepted : 2016.11.23
  • Published : 2017.04.30
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Abstract

Nickel germanide (NiGe) is one of the most promising alloy materials for source/drain (S/D) of Ge MOSFETs. However, NiGe has limited thermal stability up to $450^{\circ}C$ which is a challenge for fabrication of Ge MOSFETs. In this paper, a novel method is proposed to improve the thermal stability of NiGe using Co interlayer. As a result, we found that the thermal stability of NiGe was improved from $450^{\circ}C$ to $570^{\circ}C$ by using the proposed Co interlayer. Furthermore, we found that current-voltage (I-V) characteristic was improved a little by using Co/Ni/TiN structure after post-annealing. Therefore, NiGe formed by the proposed Co interlayer that is, Co/Ni/TiN structure, is a promising technology for S/D contact of Ge MOSFETs.

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References

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