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http://dx.doi.org/10.5573/JSTS.2017.17.2.277

A Study on Thermal Stability Improvement in Ni Germanide/p-Ge using Co interlayer for Ge MOSFETs  

Shin, Geon-Ho (Division of Electronics, Radio Science & Engineering, and Information Communications Engineering, Chungnam National University)
Kim, Jeyoung (Division of Electronics, Radio Science & Engineering, and Information Communications Engineering, Chungnam National University)
Li, Meng (Division of Electronics, Radio Science & Engineering, and Information Communications Engineering, Chungnam National University)
Lee, Jeongchan (Division of Electronics, Radio Science & Engineering, and Information Communications Engineering, Chungnam National University)
Lee, Ga-Won (Department of Electronics Engineering, Chungnam National University)
Oh, Jungwoo (School of Integrated Technology, Yonsei University)
Lee, Hi-Deok (Department of Electronics Engineering, Chungnam National University)
Publication Information
JSTS:Journal of Semiconductor Technology and Science / v.17, no.2, 2017 , pp. 277-282 More about this Journal
Abstract
Nickel germanide (NiGe) is one of the most promising alloy materials for source/drain (S/D) of Ge MOSFETs. However, NiGe has limited thermal stability up to $450^{\circ}C$ which is a challenge for fabrication of Ge MOSFETs. In this paper, a novel method is proposed to improve the thermal stability of NiGe using Co interlayer. As a result, we found that the thermal stability of NiGe was improved from $450^{\circ}C$ to $570^{\circ}C$ by using the proposed Co interlayer. Furthermore, we found that current-voltage (I-V) characteristic was improved a little by using Co/Ni/TiN structure after post-annealing. Therefore, NiGe formed by the proposed Co interlayer that is, Co/Ni/TiN structure, is a promising technology for S/D contact of Ge MOSFETs.
Keywords
Germanium; germanide; nickel; cobalt; interlayer; thermal stability;
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