• 대한전자공학회논문지SD
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• 제41권7호
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• pp.21-29
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• 2004

본 논문에서는 Dual oxide를 갖는 Nano-scale CMOSFET에서 각 소자의 Hot carrier 특성을 분석하여 두 가지 중요한 결과를 나타내었다. 하나는 NMOSFET Thin/Thick인 경우 CHC stress 보다는 DAHC stress에 의한 소자 열화가 지배적이고, Hot electron이 중요하게 영향을 미치고 있는 반면에, PMOSFET에서는 특히 Hot hole에 의한 영향이 주로 나타나고 있다는 것이다. 다른 하나는, Thick MOSFET인 경우 여전히 NMOSFET의 수명이 PMOSFET의 수명에 비해 작지만, Thin MOSFET에서는 오히려 PMOSFET의 수명이 NMOSFET보다 작다는 것이다. 이러한 분석결과는 Charge pumping current 측정을 통해 간접적으로 확인하였다. 따라서 Nano-scale CMOSFET에서의 NMOSFET보다는 PMOSFET에 대한 Hot camel lifetime 감소에 관심을 기울여야 하며, Hot hole에 대한 연구가 진행되어야 한다고 할 수 있다.

• 한국전기전자재료학회논문지
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• 제33권3호
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• pp.169-172
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• 2020

In this paper, the effect of hot carrier injection on an n-bulk fin field-effect transistor (FinFET) is analyzed. The hot carrier injection method is applied to determine the performance change after injection in two ways, channel hot electron (CHE) and drain avalanche hot carrier (DAHC), which have the greatest effect at room temperature. The optimum condition for CHE injection is V_G=V_D, and the optimal condition for DAHC injection can be indirectly confirmed by measuring the peak value of the substrate current. Deterioration by DAHC injection affects not only hot electrons formed by impact ionization, but also hot holes, which has a greater impact on reliability than CHE. Further, we test the amount of drain voltage that can be withstood, and extracted the lifetime of the device. Under CHE injection conditions, the drain voltage was able to maintain a lifetime of more than 10 years at a maximum of 1.25 V, while DAHC was able to achieve a lifetime exceeding 10 years at a 1.05-V drain voltage, which is 0.2 V lower than that of CHE injection conditions.

• 한국자동차공학회논문집
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• 제15권6호
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• pp.30-37
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• 2007

The injection and spray characteristics of top-feed type injector was investigated under liquid phase injection fueled with liquefied petroleum gas (LPG). Different pressures and temperatures of fuel injection system were tested to identify the injection characteristics after hot soaking. MIE-scattering technique was used for verification of successful liquid phase injection after hot soaking. In case of bottom-feed type injector, the injection was accomplished at every experimental condition. In case of top-feed type injector, when the pressure of LPG was over 1.2 MPa, the injection was not executed. However, under the pressure were 1.2 MPa, the liquid phase injection after hot soaking was accomplished. The engine with top-feed type fuel injection equipment was restarted successfully after hot soaking.

• 한국수소및신에너지학회논문집
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• 제25권3호
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• pp.297-304
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• 2014

The purpose of this study is to evaluate the experimental performance characteristics of a water-to-water geothermal heat pump featuring a vapor refrigerant injection for the production of hot water. The performance of geothermal heat pump with a vapor injection was evaluated by comparing with that of a conventional geothermal heat pump without a vapor injection. For heating operation, the geothermal heat pump with a vapor injection is superior in COP and heating capacity. The vapor injection was more effective for supplying hot water while overloading. The vapor injection was effective for the improvement of the cooling capacity. However, the vapor injection was not effective for the increasing of COP according to the increased input of a compressor. The advantage of vapor injection in water-to-water geothermal heat pump become disappeared while cooling operation with lower part loading.

• Design & Manufacturing
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• 제2권3호
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• pp.1-5
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• 2008

Plastic parts are molded for the purpose of mass production in injection molding. Therefore designer is usually designing molds that has geometrically balanced hot runner lay-out for filling balance at cavities. Although, mold is manufactured with geometrically balanced runner lay-out, there are actually filling imbalances in cavities. These filling imbalances phenomenon are caused by complicated interaction between melt and mold. In this paper, filling imbalances for internal gear based on injection molding in hot-runner mold were investigated by CAE and injection molding experiences.

• 한국전기전자재료학회논문지
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• 제16권9호
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• pp.771-774
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• 2003

In this paper, the programming characteristics of the multi-bit devices based on SONOS structure are investigated. Our devices have been fabricated by 0.35 $\mu\textrm{m}$ complementary metal-oxide-semiconductor (CMOS) process with LOCOS isolation. In order to achieve the multi-bit operation per cell, charges must be locally frapped in the nitride layer above the channel near the source-drain junction. Programming method is selected by Channel Hot Electron (CUE) injection which is available for localized trap in nitride film. To demonstrate CHE injection, substrate current (Isub) and one-shot programming curve are investigated. The multi-bit operation which stores two-bit per cell is investigated. Also, Hot Hole(HH) injection for fast erasing is used. The fabricated SONOS devices have ultra-thinner gate dielectrics and then have lower programming voltage, simpler process and better scalability compared to any other multi-bit storage Flash memory. Our programming characteristics are shown to be the most promising for the multi-bit flash memory.

• 전자공학회논문지A
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• 제30A권12호
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• pp.77-87
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• 1993

PMOSFETs were studied on the effect of Hot-Carrier induced drain leakage current (Gate-Induced-Drain-Leakage). The result turned out that change in Vgl(drain voltage where 1pA/$\mu$m of drain leadage current flows) was largest in the Channel-Hot-Hole(CHH) injection condition and next was in dynamic stress and was smallest in electron trapping (Igmax) condition under various stress conditions. It was analyzed that if electron trapping occurrs in the overlap region of gate and drain(G/D), it reduces GIDL current due to increment of flat-band voltage(Vfb) and if CHH is injected, interface states(Nit) were generated and it increases GIDL current due to band-to-defect-tunneling(BTDT). Especially, under dynamic stress it was confirmed that increase in GIDL current will be high when electron injection was small and CHH injection was large. Therefore as applying to real circuit, low drain voltage GIDL(BTDT) was enhaced as large as CHH Region under various operating voltage, and it will affect the reliablity of the circuit.

• 한국유체기계학회 논문집
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• 제12권2호
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• pp.46-51
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• 2009

Recently, microturbines have received attention as a small-scale distributed power generator. Since the exhaust gas carries all of the heat release, generating hot water is usual method of heat recovery from microturbine CHP (combined heat and power) systems. The power of microturbines decreases as ambient temperature increases. This study predicted micoturbine power boost by injecting hot water generated by heat recovery. Influence of injecting water at two different locations was examined. Water injection improves power, but efficiency depends much on the injection location. Injecting water at the compressor discharge shows a much higher efficiency than the combustor injection. However, the combustor injection may have as much available cogeneration heat as the dry operation, while the available heat in the compressor discharge injection is much smaller than the dry operation.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
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• pp.80-83
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• 2003

In this paper, the programming characteristics of the multi-bit devices based on SONOS structure are investigated. Our devices have been fabricated by $0.35\;{\mu}m$ complementary metal-oxide-semiconductor (CMOS) process with LOCOS isolation. In order to achieve the two-bits per cell operation, charges must be locally trapped in the nitride layer above the channel near the junction. Channel hot electron (CHE) injection for programming can operate in multi-bit using localized trap in nitride film. CHE injection in our devices is achieved with the single power supply of 5 V. To demonstrate CHE injection, substrate current (Isub) and one-shot programming curve were investigated. The multi-bit operation which stores two-bit per cell is investigated with a reverse read scheme. Also, hot hole injection for fast erasing is used. Due to the ultra-thin gate dielectrics, our results show many advantages which are simpler process, better scalability and lower programming voltage compared to any other two-bit storage flash memory. This fabricated structure and programming characteristics are shown to be the most promising for the multi-bit flash memory.

• 한국전자통신학회논문지
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• 제9권8호
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• pp.847-852
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• 2014

반도체 소자 제조에서 비용 절감을 위한 공정기술의 스케일링 가속화 경향에 따라 축소기술에 대한 요구가 증가되고 있다. 축소에 따른 또 다른 가장 큰 문제점의 하나는 Hot Carrier Injection (HCI) 특성의 열화이다. 이는 축소 과정에서 생기는 불가피한 가장 큰 이슈중의 하나이며, 특히 입출력 소자에 있어 극복하기 어려운 부분이다. 이의 개선을 위해 유효 채널 길이를 늘이고자 LDD 임플란트 공정 이전에 산화막이 추가되었고, 또한 I/O LDD 임플란트 공정의 이온 입사 각도를 최적화함으로써, LDD 영역에서 E-field 열화 없이 HCI 규격을 만족할 수 있었다.