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http://dx.doi.org/10.13067/JKIECS.2014.9.8.847

A study on the Hot Carrier Injection Improvement of I/O Transistor  

Mun, Seong-Yeol (전남대학교 전기및반도체공학과)
Kang, Seong-Jun (전남대학교 전기및반도체공학과)
Joung, Yang-Hee (전남대학교 전기및반도체공학과)
Publication Information
The Journal of the Korea institute of electronic communication sciences / v.9, no.8, 2014 , pp. 847-852 More about this Journal
Abstract
As the scaling trend becomes accelerated in process technology for cost reduction in semiconductor chip manufacturing, the requirement for shrink technology has increased. Hot Carrier Injection (HCI) degradation for I/O transistors is most concerning part when shrink. To solve this, the effective channel length (Leff) was increased using liner oxide before Light Doped Drain (LDD) implants and optimized the tilt angle to increase Leff without E-field degradation in LDD region, satisfying the HCI specification.
Keywords
LDD Implant; Ion Tilt Angle; Linear Oxide Films; Hot Carrier Injection; Effective Channel;
Citations & Related Records
Times Cited By KSCI : 2  (Citation Analysis)
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