• Journal of the Institute of Electronics Engineers of Korea SD
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• v.41 no.7
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• pp.21-29
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• 2004

Hot carrier degradation characteristics of Nano-scale CMOSFETs with dual gate oxide have been analyzed in depth. It is shown that, PMOSFET lifetime dominate the device lifetime than NMOSFET In Nano-scale CMOSFETs, that is, PMOSFET lifetime under CHC (Channel Hot Carrier) stress is much lower than NMOSFET lifetime under DAHC (Dram Avalanche Hot Carrier) stress. (In case of thin MOSFET, CHC stress showed severe degradation than DAHC for PMOSFET and DAHC than CHC for NMOSFET as well known.) Therefore, the interface trap generation due to enhanced hot hole injection will become a dominant degradation factor in upcoming Nano-scale CMOSFET technology. In case of PMOSFETs, CHC shows enhanced degradation than DAHC regardless of thin and thick PMOSFETs. However, what is important is that hot hole injection rather than hot electron injection play a important role in PMOSFET degradation i.e. threshold voltage increases and saturation drain current decreases due to the hot carrier stresses for both thin and thick PMOSFET. In case of thick MOSFET, the degradation by hot carrier is confirmed using charge pumping current method. Therefore, suppression of PMOSFET hot carrier degradation or hot hole injection is highly necessary to enhance overall device lifetime or circuit lifetime in Nano-scale CMOSFET technology

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.33 no.3
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• pp.169-172
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• 2020

In this paper, the effect of hot carrier injection on an n-bulk fin field-effect transistor (FinFET) is analyzed. The hot carrier injection method is applied to determine the performance change after injection in two ways, channel hot electron (CHE) and drain avalanche hot carrier (DAHC), which have the greatest effect at room temperature. The optimum condition for CHE injection is V_G=V_D, and the optimal condition for DAHC injection can be indirectly confirmed by measuring the peak value of the substrate current. Deterioration by DAHC injection affects not only hot electrons formed by impact ionization, but also hot holes, which has a greater impact on reliability than CHE. Further, we test the amount of drain voltage that can be withstood, and extracted the lifetime of the device. Under CHE injection conditions, the drain voltage was able to maintain a lifetime of more than 10 years at a maximum of 1.25 V, while DAHC was able to achieve a lifetime exceeding 10 years at a 1.05-V drain voltage, which is 0.2 V lower than that of CHE injection conditions.

• Transactions of the Korean Society of Automotive Engineers
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• v.15 no.6
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• pp.30-37
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• 2007

The injection and spray characteristics of top-feed type injector was investigated under liquid phase injection fueled with liquefied petroleum gas (LPG). Different pressures and temperatures of fuel injection system were tested to identify the injection characteristics after hot soaking. MIE-scattering technique was used for verification of successful liquid phase injection after hot soaking. In case of bottom-feed type injector, the injection was accomplished at every experimental condition. In case of top-feed type injector, when the pressure of LPG was over 1.2 MPa, the injection was not executed. However, under the pressure were 1.2 MPa, the liquid phase injection after hot soaking was accomplished. The engine with top-feed type fuel injection equipment was restarted successfully after hot soaking.

• Transactions of the Korean hydrogen and new energy society
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• v.25 no.3
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• pp.297-304
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• 2014

The purpose of this study is to evaluate the experimental performance characteristics of a water-to-water geothermal heat pump featuring a vapor refrigerant injection for the production of hot water. The performance of geothermal heat pump with a vapor injection was evaluated by comparing with that of a conventional geothermal heat pump without a vapor injection. For heating operation, the geothermal heat pump with a vapor injection is superior in COP and heating capacity. The vapor injection was more effective for supplying hot water while overloading. The vapor injection was effective for the improvement of the cooling capacity. However, the vapor injection was not effective for the increasing of COP according to the increased input of a compressor. The advantage of vapor injection in water-to-water geothermal heat pump become disappeared while cooling operation with lower part loading.

• Design & Manufacturing
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• v.2 no.3
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• pp.1-5
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• 2008

Plastic parts are molded for the purpose of mass production in injection molding. Therefore designer is usually designing molds that has geometrically balanced hot runner lay-out for filling balance at cavities. Although, mold is manufactured with geometrically balanced runner lay-out, there are actually filling imbalances in cavities. These filling imbalances phenomenon are caused by complicated interaction between melt and mold. In this paper, filling imbalances for internal gear based on injection molding in hot-runner mold were investigated by CAE and injection molding experiences.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.9
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• pp.771-774
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• 2003

In this paper, the programming characteristics of the multi-bit devices based on SONOS structure are investigated. Our devices have been fabricated by 0.35 $\mu\textrm{m}$ complementary metal-oxide-semiconductor (CMOS) process with LOCOS isolation. In order to achieve the multi-bit operation per cell, charges must be locally frapped in the nitride layer above the channel near the source-drain junction. Programming method is selected by Channel Hot Electron (CUE) injection which is available for localized trap in nitride film. To demonstrate CHE injection, substrate current (Isub) and one-shot programming curve are investigated. The multi-bit operation which stores two-bit per cell is investigated. Also, Hot Hole(HH) injection for fast erasing is used. The fabricated SONOS devices have ultra-thinner gate dielectrics and then have lower programming voltage, simpler process and better scalability compared to any other multi-bit storage Flash memory. Our programming characteristics are shown to be the most promising for the multi-bit flash memory.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.30A no.12
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• pp.77-87
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• 1993

PMOSFETs were studied on the effect of Hot-Carrier induced drain leakage current (Gate-Induced-Drain-Leakage). The result turned out that change in Vgl(drain voltage where 1pA/$\mu$m of drain leadage current flows) was largest in the Channel-Hot-Hole(CHH) injection condition and next was in dynamic stress and was smallest in electron trapping (Igmax) condition under various stress conditions. It was analyzed that if electron trapping occurrs in the overlap region of gate and drain(G/D), it reduces GIDL current due to increment of flat-band voltage(Vfb) and if CHH is injected, interface states(Nit) were generated and it increases GIDL current due to band-to-defect-tunneling(BTDT). Especially, under dynamic stress it was confirmed that increase in GIDL current will be high when electron injection was small and CHH injection was large. Therefore as applying to real circuit, low drain voltage GIDL(BTDT) was enhaced as large as CHH Region under various operating voltage, and it will affect the reliablity of the circuit.

• The KSFM Journal of Fluid Machinery
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• v.12 no.2
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• pp.46-51
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• 2009

Recently, microturbines have received attention as a small-scale distributed power generator. Since the exhaust gas carries all of the heat release, generating hot water is usual method of heat recovery from microturbine CHP (combined heat and power) systems. The power of microturbines decreases as ambient temperature increases. This study predicted micoturbine power boost by injecting hot water generated by heat recovery. Influence of injecting water at two different locations was examined. Water injection improves power, but efficiency depends much on the injection location. Injecting water at the compressor discharge shows a much higher efficiency than the combustor injection. However, the combustor injection may have as much available cogeneration heat as the dry operation, while the available heat in the compressor discharge injection is much smaller than the dry operation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.80-83
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• 2003

In this paper, the programming characteristics of the multi-bit devices based on SONOS structure are investigated. Our devices have been fabricated by $0.35\;{\mu}m$ complementary metal-oxide-semiconductor (CMOS) process with LOCOS isolation. In order to achieve the two-bits per cell operation, charges must be locally trapped in the nitride layer above the channel near the junction. Channel hot electron (CHE) injection for programming can operate in multi-bit using localized trap in nitride film. CHE injection in our devices is achieved with the single power supply of 5 V. To demonstrate CHE injection, substrate current (Isub) and one-shot programming curve were investigated. The multi-bit operation which stores two-bit per cell is investigated with a reverse read scheme. Also, hot hole injection for fast erasing is used. Due to the ultra-thin gate dielectrics, our results show many advantages which are simpler process, better scalability and lower programming voltage compared to any other two-bit storage flash memory. This fabricated structure and programming characteristics are shown to be the most promising for the multi-bit flash memory.

• The Journal of the Korea institute of electronic communication sciences
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• v.9 no.8
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• pp.847-852
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• 2014

As the scaling trend becomes accelerated in process technology for cost reduction in semiconductor chip manufacturing, the requirement for shrink technology has increased. Hot Carrier Injection (HCI) degradation for I/O transistors is most concerning part when shrink. To solve this, the effective channel length (Leff) was increased using liner oxide before Light Doped Drain (LDD) implants and optimized the tilt angle to increase Leff without E-field degradation in LDD region, satisfying the HCI specification.