• Journal of Electrical Engineering and Technology
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• v.11 no.3
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• pp.781-789
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• 2016

Busbar has been used as electric conductor within extra high voltage (EHV) gas insulated switchgear (GIS), which makes EHV GIS higher security, smaller size and lower cost. However, the main fault of GIS is overheating of busbar connection parts, circuit breaker and isolating switch contact parts, which has been already restricting development of GIS to a large extent. In this study, a coupled magneto-flow-thermal analysis is used to investigate the thermal properties of GIS busbar in steady-state. A three-dimensional (3-D) finite element model (FEM) is built to calculate multiphysics fields including electromagnetic field, flow field and thermal field in steady-state. The influences of current on the magnetic flux density, flow velocity and heat distribution has been investigated. Temperature differences of inner wall and outer wall are investigated for busbar tank and conducting rod. Considering the end effect in the busbar, temperature rise difference is compared between end sections and the middle section. In order to obtain better heat dissipation effect, diameters of conductor and tank are optimized based on temperature rise simulation results. Temperature rise tests have been done to validate the 3-D simulation model, which is observed a good correlation with the simulation results. This study provides technical support for optimized structure of the EHV GIS busbar.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.37 no.8A
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• pp.712-719
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• 2012

This paper presents Single-bit Third order Delta-Sigma Modulator, which can be applied to the Low speed High resolution ADC in Audio signal Process System. Whereas the Operational Amplifier in modulator consumed static power dissipation in operating, this modulator used Switching on/off techniques, which makes the Power dissipation of the modulator reduced. Also proposed modulator minimizes frequency characteristic variation by optimizing switch position. And this modulator chooses Single-bit type to guarantee stability. The designed ADC went through 0.35um CMOS n-well 1-poly 4-metal process to be a final product, and the final product has shown 17.1mW of power dissipation with 3.3V of Supply Voltage, 6.4MHz of conversion rate. And 84.3dB SNDR and 13.5bit ENOB with 20KHz of input frequency.

• Journal of IKEEE
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• v.25 no.3
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• pp.517-527
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• 2021

This paper presents the phase-shift full-bridge DC-DC converter using the one-chip micom. The proposed converter primary is the full-bridge power topology that operates with the unipolar pulse-width modulation (PWM) by the phase-shift method, and the secondary is the full-bridge full-wave rectifier composed of four diodes. The control of proposed converter is performed by the one-chip micom and its MOSFET switches are driven by the bootstrap circuit. Thus the total system of proposed converter is simple. The proposed converter achieves high-efficiency using the resonant circuit and blocking capacitor. In this paper, first, the power-circuit operation of proposed converter is explained according to each operation mode. And the power-circuit design method of proposed converter is shown, and the software control algorithm on the micom and the feedback and switch drive circuits operating the proposed converter are described, briefly. Then, the operation characteristics of proposed converter are validated through the experimental results of a designed and implemented prototype converter by the shown design and implementation method in this paper. The highest efficiency in the results was about 92%.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.16 no.3
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• pp.2301-2307
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• 2015

The aim of this study was to evaluate the feasibility of application of the high voltage impulse (HVI) technique to the control of scale formation by calcium carbonate, which is pointed out as an important issue in industrial water treatment. The HVI system consisted of the power supply, high voltage generator, capacitors, switch and impulse generator was designed and made in laboratory scale, which can make 17kV impulse. HVI was introduced to the reactor that was filled with synthetic water containing $Ca^{2+}$ion. The concentration of calcium ion decreased only 3.0% after 5 minutes of contact time. However, it decreased up to 13.7% after 60 minutes of HVI contact time. Temperature and pH increased but conductivity decreased due to precipitation of the calcium carbonate. Although the decrease in concentration of calcium ion was not sufficient, it was verified that the HVI technique could be applicable for the softening and desalting processes.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.13 no.12
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• pp.2685-2692
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• 2009

We propose pulsed magnetic stimulation below 30W by the AC(60Hz) switching control of leakage transformer primary which has some advantage of cost and size compared to a typical pulsed power supply. Pulse repetition rate is adjusted from 5Hz to 60Hz to control magnetic stimulation output. In this magnetic stimulation, a low voltage open loop control for high voltage discharge circuit is employed to avoid the HV sampling or switching and high voltage leakage transformer is used to convert rectified low voltage pulse to high voltage one. A ZCS(Zero Cross Switch)circuit and a DSP & FPGA are used to control gate signal of SCR precisely. The pulse repetition rate is limited by 60Hz due to the frequency of AC line and a high leakage inductance. The maximum magnetic stimulation output was obtained about 33W at pulse repetition rate of 60Hz, total 40, 80, 120, $160^{\circ}$, SCR gate trigger angle $90^{\circ}$ and total output.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.48 no.8
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• pp.33-44
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• 2011

In this paper, we presents a hybrid on-chip bus architecture based on the AMBA 3.0 AXI protocol for MPSoC with high performance and low power. Among AXI channels, data channels with a lot of traffic are designed by crossbar-switch architecture for massively parallel processing. On the other hand, addressing and write-response channels having a few of traffic is handled by shared-bus architecture due to the overheads of (areas, interconnection wires and power consumption) reduction. In experiments, the comparisons are carried out in terms of time, space and power domains for the verification of proposed hybrid on-chip bus architecture. For $16{\times}16$ bus configuration, the hybrid on-chip bus architecture has almost similar performance in time domain with respect to crossbar on-chip bus architecture, as the masters's latency is differenced about 9% and the total execution time is only about 4%. Furthermore, the hybrid on-chip bus architecture is very effective on the overhead reduction, such as it reduced about 47% of areas, and about 52% of interconnection wires, as well as about 66% of dynamic power consumption. Thus, the presented hybrid on-chip bus architecture is shown to be very effective for the MPSoC interconnection design aiming at high performance and low power.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.8
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• pp.632-636
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• 2009

The local oxidation using an atomic force microscopy (AFM) is useful for Si-based fabrication of nanoscale structures and devices. SiC is a wide band-gap material that has advantages such as high-power, high-temperature and high-frequency in applications, and among several SiC polytypes, 4H-SiC is the most attractive polytype due to the high electron mobility. However, the AFM local oxidation of 4H-SiC for fabrication is still difficult, mainly due to the physical hardness and chemical inactivity of SiC. In this paper, we investigated the local oxidation of 4H-SiC surface using an AFM. We fabricated oxide patterns using a contact mode AFM with a Pt/Ir-coated Si tip (N-type, 0.01-0.025 ${\Omega}cm$) at room temperature, and the relative humidity ranged from 40 to 50 %. The height of the fabricated oxide pattern (1-3 nm) on SiC is similar to that of typically obtained on Si ($10^{15}^{\sim}10^{17}$ $cm^{-3}$). We perform the 2-D simulation to further analyze the electric field between the tip and the surface. We demonstrated that a specific electric field (4 ${\times}$ $10^7\;V/m$) and a doping concentration ($^{\sim}10^{17}$ $cm^{-3}$) is sufficient to switch on/off the growth of the local oxide on SiC.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.04b
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• pp.79-80
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• 2009

The local oxidation using an atomic force microscopy (AFM) is useful for Si-base fabrication of nanoscale structures and devices. SiC is a wide band-gap material that has advantages such as high-power, high-temperature and high-frequency in applications, and among several SiC poly types, 4H-SiC is the most attractive poly type due to the high electron mobility. However, the AFM local oxidation of 4H-SiC for fabrication is still difficult, mainly due to the physical hardness and chemical inactivity of SiC. In this paper, we investigated the local oxidation of 4H-SiC surface using an AFM. We fabricated oxide patterns using a contact mode AFM with a Pt/Ir-coated Si tip (N-type, $0.01{\sim}0.025\;{\Omega}cm$) at room temperature, and the relative humidity ranged from 40 to 50%. The height of the fabricated oxide pattern ($1{\sim}3\;nm$) on SiC is similar to that of typically obtained on Si ($10^{15}{\sim}10^{17}\;cm^{-3}$). We perform the 2-D simulation to further analyze the electric field between the tip and the surface. Whereas the simulated electric field on Si surface is constant ($5\;{\times}\;10^7\;V/m$), the electric field on SiC surface increases with increasing the doping concentration from ${\sim}10^{15}$ to ${\sim}10^{17}\;cm^{-3}$. We demonstrated that a specific electric field ($4\;{\times}\;10^7\;V/m$) and a doping concentration (${\sim}10^{17}\;cm^{-3}$) is sufficient to switch on/off the growth of the local oxide on SiC.

• Proceedings of the KIEE Conference
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• 2000.07c
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• pp.2098-2100
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• 2000

We propose pulsed $CO_2$ laser below 30W by the AC(60Hz) switching control of leakage transformer primary which has some advantage of cost and size compared to a typical pulsed power supply. Pulse repetition rate is adjusted from 5Hz to 60Hz to control laser output. In this laser, a low voltage open loop control for high voltage discharge circuit is employed to avoid the HV sampling or switching and high voltage leakage transformer is used to convert rectified low voltage pulse to high voltage one. A ZCS(Zero Cross Switch) circuit and a PIC one-chip microprocessor are used to control gate signal of SCR precisely. The pulse repetition rate is limited by 60Hz due to the frequency of AC line and a high leakage inductance. The maximum laser output was obtained about 23W at pulse repetition rate of 60Hz, total gas mixture of $CO_{2}/N_{2}$/He = 1/9/15, SCR gate trigger angle 90$^{\circ}$, and total pressure of 18Torr.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.10
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• pp.7-14
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• 2008

In this paper, we designed the HVIC(High Voltage Gate Driver IC) which has improved noise immunity characteristics and high driving capability. Operating frequency and input voltage range of the designed HVIC is up to 500kHz and 650V, respectively. Noise protection and schmitt trigger circuit is included in the high-side level shifter of designed IC which has very high dv/dt noise immunity characteristic(up to 50V/ns). And also, rower dissipation of high-side level shifter with designed short-pulse generation circuit decreased more that 40% compare with conventional circuit. In addition, designed HVIC includes protection and UVLO circuit to prevent cross-conduction of power switch and sense power supply voltage of driving section, respectively. Protection and UVLO circuit can improve the stability of the designed HVIC. Spectre and Pspice circuit simulator were used to verify the operating characteristics of the designed HVIC.