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Design of the Noise Margin Improved High Voltage Gate Driver IC for 300W Resonant Half-Bridge Converter  

Song, Ki-Nam (Department of Electronic Engineering, Gyeongsang National University, Engineering Research Institute)
Park, Hyun-Il (Department of Electronic Engineering, Gyeongsang National University, Engineering Research Institute)
Lee, Yong-An (Department of Electronic Engineering, Gyeongsang National University, Engineering Research Institute)
Kim, Hyoung-Woo (Korea Electrotechnology Research Institute)
Kim, Ki-Hyun (Korea Electrotechnology Research Institute)
Seo, Kil-Soo (Korea Electrotechnology Research Institute)
Han, Seok-Bung (Department of Electronic Engineering, Gyeongsang National University, Engineering Research Institute)
Publication Information
Abstract
In this paper, we designed the HVIC(High Voltage Gate Driver IC) which has improved noise immunity characteristics and high driving capability. Operating frequency and input voltage range of the designed HVIC is up to 500kHz and 650V, respectively. Noise protection and schmitt trigger circuit is included in the high-side level shifter of designed IC which has very high dv/dt noise immunity characteristic(up to 50V/ns). And also, rower dissipation of high-side level shifter with designed short-pulse generation circuit decreased more that 40% compare with conventional circuit. In addition, designed HVIC includes protection and UVLO circuit to prevent cross-conduction of power switch and sense power supply voltage of driving section, respectively. Protection and UVLO circuit can improve the stability of the designed HVIC. Spectre and Pspice circuit simulator were used to verify the operating characteristics of the designed HVIC.
Keywords
High Voltage Gate Driver ICs; MOSFET Driver IC; Half-Bridge Converter;
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