Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2009.04b
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- Pages.79-80
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- 2009
Local oxidation of 4H-SiC using an atomic force microscopy
Atomic Force Microscopy을 이용한 4H-SiC의 Local Oxidation
- Jo, Yeong-Deuk (Kwangwoon Univ.) ;
- Bahng, Wook (Korea Electrotechnology Research Institute (KERI)) ;
- Kim, Sang-Cheol (Korea Electrotechnology Research Institute (KERI)) ;
- Kim, Nam-Kyun (Korea Electrotechnology Research Institute (KERI)) ;
- Koo, Sang-Mo (Kwangwoon Univ.)
- Published : 2009.04.03
Abstract
The local oxidation using an atomic force microscopy (AFM) is useful for Si-base fabrication of nanoscale structures and devices. SiC is a wide band-gap material that has advantages such as high-power, high-temperature and high-frequency in applications, and among several SiC poly types, 4H-SiC is the most attractive poly type due to the high electron mobility. However, the AFM local oxidation of 4H-SiC for fabrication is still difficult, mainly due to the physical hardness and chemical inactivity of SiC. In this paper, we investigated the local oxidation of 4H-SiC surface using an AFM. We fabricated oxide patterns using a contact mode AFM with a Pt/Ir-coated Si tip (N-type,
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