• Journal of the Korean Crystal Growth and Crystal Technology
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• v.17 no.5
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• pp.187-191
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• 2007

The device performance of ZnO-thin film transistors(ZnO-TFTs) with gate dielectrics of $SiO_2,\;SiN_x$ and Polyvinylphenol(PVP) having a bottom gate configuration were investigated. ZnO-TFTs can induce high device performance with low intrinsic carrier concentration of ZnO only by controlling gas flow rates without additional doping or annealing processes. The field effect mobility and on/off ratio of ZnO-TFTs with $SiN_x$ were $20.2cm^2V^{-1}s^{-1}\;and\;5{\times}10^6$ respectively which is higher than those previously reported. The device adoptable values of the mobility of $1.37cm^2V^{-1}s^{-1}$ and the on/off ratio of $6{\times}10^3$ were evaluated from the device with organic PVP dielectric.

• 전자공학회논문지 IE
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• v.43 no.2
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• pp.7-10
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• 2006

A GaN-based metal-insulator-semiconductor (MIS) structure has been fabricated by using $BaTa_2O_6$ instead of conventional oxide as insulator gate. The leakage current o) films are in order of $10^{-12}-10^{-13}A/cm^2$ for GaN on $Al_2O_3$(0001) substrate and in order of $10^{-6}-10^{-7}A/cm^2$ for GaN on GaAs(001) substrate. The leakage current of thses films is governed by space-charge-limited current over 45 MV/cm in case of GaN on $Al_2O_3$(0001) substrate and by Poole-Frenkel emission in case of GaN on GaAs(001).

• Korean Journal of Materials Research
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• v.28 no.12
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• pp.758-762
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• 2018

The transfer characteristics of zinc tin oxide(ZTO) on silicon dioxide($SiO_2$) thin film transistor generally depend on the electrical properties of gate insulators. $SiO_2$ thin films are prepared with argon gas flow rates of 25 sccm and 30 sccm. The rate of ionization of $SiO_2$(25 sccm) decreases more than that of $SiO_2$(30 sccm), and then the generation of electrons decreases and the conductivity of $SiO_2$(25 sccm) is low. Relatively, the conductivity of $SiO_2$(30 sccm) increases because of the high rate of ionization of argon gases. Therefore, the insulating performance of $SiO_2$(25 sccm) is superior to that of $SiO_2$(30 sccm) because of the high potential barrier of $SiO_2$(25 sccm). The $ZTO/SiO_2$ transistors are prepared to research the $CO_2$ gas sensitivity. The stability of the transistor of $ZTO/SiO_2$(25 sccm) as a high insulator is superior owing to the high potential barrier. It is confirmed that the electrical properties of the insulator in transistor devices is an important factor to detect gases.

• Journal of the Korean Institute of Telematics and Electronics
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• v.18 no.4
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• pp.43-48
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• 1981

The Cdse TFTs with SiO gate insulator layer have been fabricated with vacum evaporatim technique. The effects of semiconductor thickness and drain-source channel length on the electrical propertis have been investigated. The TFTs with 1000$\AA$ SiO insulator, 1500 $\AA$ CdSe semiconductor layer and 40$\mu$m chammel length showed the best characteristics.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.7-8
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• 2006

The effects of heat treatment on the electrical properties of SGOI were examined. We proposed the optimized heat treatments for improving the interfacial electrical properties in SGOI-MOSFET. By applying the additional pre-RTA(rapid thermal annealing) before gate oxidation and post-RTA after dopant activation, the driving current, the transconductance, and the leakage current were improved significantly.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.290-293
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• 2006

We designed the H-IPS that has similar aperture ratio to the AS-IPS with organic insulator. To improve the aperture ratio without organic insulator, we positioned the pixel electrode over the preceding gate on the base of the H-IPS structure, and minimized the width of pixel and common electrodes. Without the additional process, we could obtain the similar brightness with that of AS-IPS in 15inch SXGA+ Panel.

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.15-18
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• 2003

Pentacene OTFTs of $Al_2O_3$ insulator treated with a diluted PMMA were fabricated for the application of the low voltage operation and large area displays. The operation voltage of 15 V and the mobility of 0.35 $cm^2/Vsec$ are obtained even adopting the thick dielectric of 100 nm which was deposited by atomic layer deposition at the temperature of $150^{\circ}C$. The current on-off ratio was $4.1{\times}10^4$ for the OTFTs treated with 9:1 PMMA and good saturation characteristics were obtained as drain voltage increases.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.10-10
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• 2010

ESD (Electrostatic Discharge) phenomenon occurs in everywhere and especially it damages to semiconductor devices. For ESD protection, there are some devices such as diode, GGNMOS (Gate-Grounded NMOS), SCR (Silicon-Controlled Rectifier), etc. Among them, diode and GGNMOS are usually chosen because of their small size, even though SCR has greater current capability than GGNMOS. In this paper, a novel SCR is proposed on the SOI (Silicon-On-Insulator) structure which has $1{\mu}m$ film thickness. In order to design and confirm the proposed SCR, TSUPREM4 and MEDICI simulators are used, respectively. According to the simulation result, although the proposed SCR has more compact size, it's electrical performance is better than electrical characteristics of conventional GGNMOS.

• Proceedings of the IEEK Conference
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• 2000.11b
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• pp.29-32
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• 2000

Meta1-ferroelectric-insulator-semiconductor(MFIS) devices using Pt/LiNbO$_{3}$/AIN/Si structure were successfully fabricated. AIN thin films were made into metal-insulator-semiconductor(MIS) devices by evaporating aluminum in a dot array on the film surface. The dielectric constant of the AIN film calculated from the capacitance in the accumulation region in the capacitance-voltage(C-V ) characteristic is 8. The gate leakage current density of MIS devices using a aluminum electrode showed the least value of 1$\times$10$^{-8A}$ $\textrm{cm}^2$ order at the electric field of 500㎸/cm. A typica] value of the dielectric constant of MFIS device was about 23 derived from 1MHz capacitance-voltage (C-V) measurement and the resistivity of the film at the field of 500㎸/cm was about 5.6$\times$ 10$^{13}$ $\Omega$.cmcm

• Proceedings of the IEEK Conference
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• 2000.11b
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• pp.221-224
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• 2000

We have successfully demonstrated metal-ferroel-ectric-insulator-semiconductor (MFIS) devices using Al/LiNbO$_{3}$/SiN/Si structure. The SiN thin films were made into metal -insulator- semiconductor (MIS) devices by thermal evaporation of aluminum source in a dot away on the surface. The interface property of MFIS from 1MHz & quasistatic C-V is good and the memory window width is about 1.5V at 0.2V/s signal voltage sweep rate. The gate leakage current density of MFIS capacitors using a aluminum electrode showed the least value of 1x10$^{-8}$ A/$\textrm{cm}^2$ order at the electric field of 300㎸/cm. And the XRD patterns shows the probability of applications of LN for MFIS devices for FeRAMs on amorphous SiN buffer layer.