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Characteristics of Al/$BaTa_2O_6$/GaN MIS structure  

Kim, Dong-Sik (Dept. of Computer System & Engineering, Inha Technical College)
Publication Information
전자공학회논문지 IE / v.43, no.2, 2006 , pp. 7-10 More about this Journal
Abstract
A GaN-based metal-insulator-semiconductor (MIS) structure has been fabricated by using $BaTa_2O_6$ instead of conventional oxide as insulator gate. The leakage current o) films are in order of $10^{-12}-10^{-13}A/cm^2$ for GaN on $Al_2O_3$(0001) substrate and in order of $10^{-6}-10^{-7}A/cm^2$ for GaN on GaAs(001) substrate. The leakage current of thses films is governed by space-charge-limited current over 45 MV/cm in case of GaN on $Al_2O_3$(0001) substrate and by Poole-Frenkel emission in case of GaN on GaAs(001).
Keywords
GaN$BaTa_2O_6$; Poole-Frenkel emission; MISFET; Al/$BaTa_2O_6$; /GaN;
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