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High performance of ZnO thin film transistors using $SiN_x$ and organic PVP gate dielectrics  

Kim, Young-Woong (Dept. of Ceramic Engineering, Hanyang University)
Park, In-Sung (Information Display Research Institute, Hanyang University)
Kim, Young-Bae (Information Display Research Institute, Hanyang University)
Choi, Duck-Kyun (Dept. of Ceramic Engineering, Hanyang University)
Publication Information
Journal of the Korean Crystal Growth and Crystal Technology / v.17, no.5, 2007 , pp. 187-191 More about this Journal
Abstract
The device performance of ZnO-thin film transistors(ZnO-TFTs) with gate dielectrics of $SiO_2,\;SiN_x$ and Polyvinylphenol(PVP) having a bottom gate configuration were investigated. ZnO-TFTs can induce high device performance with low intrinsic carrier concentration of ZnO only by controlling gas flow rates without additional doping or annealing processes. The field effect mobility and on/off ratio of ZnO-TFTs with $SiN_x$ were $20.2cm^2V^{-1}s^{-1}\;and\;5{\times}10^6$ respectively which is higher than those previously reported. The device adoptable values of the mobility of $1.37cm^2V^{-1}s^{-1}$ and the on/off ratio of $6{\times}10^3$ were evaluated from the device with organic PVP dielectric.
Keywords
ZnO; ZnO-TFTs; Gate dielectrics; Field effect mobility; On/off ratio; Organic insulator;
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