Proceedings of the IEEK Conference (대한전자공학회:학술대회논문집)

The Institute of Electronics and Information Engineers (대한전자공학회)
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Formations and properties of MFIS structure using $LiNbO_3/Si_3N_4$ structure

$LiNbO_3/Si_3N_4$ 구조를 이용한 MFIS 구조의 형성 및 특성

  • 김용성 (청주대학교 전자공학과) ;
  • 정상현 (청주대학교 전자공학과) ;
  • 정순원 (청주대학교 전자공학과) ;
  • 이남열 (청주대학교 전자공학과) ;
  • 김진규 (청주대학교 전자공학과) ;
  • 김광호 (청주대학교 전자·정보통신 반도체공학부) ;
  • 유병곤 (한국전자통신연구원) ;
  • 이원재 (한국전자통신연구원) ;
  • 유인규 (한국전자통신연구원)
  • Published : 2000.11.01
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Abstract

We have successfully demonstrated metal-ferroel-ectric-insulator-semiconductor (MFIS) devices using Al/LiNbO$_{3}$/SiN/Si structure. The SiN thin films were made into metal -insulator- semiconductor (MIS) devices by thermal evaporation of aluminum source in a dot away on the surface. The interface property of MFIS from 1MHz & quasistatic C-V is good and the memory window width is about 1.5V at 0.2V/s signal voltage sweep rate. The gate leakage current density of MFIS capacitors using a aluminum electrode showed the least value of 1x10$^{-8}$ A/$\textrm{cm}^2$ order at the electric field of 300㎸/cm. And the XRD patterns shows the probability of applications of LN for MFIS devices for FeRAMs on amorphous SiN buffer layer.

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