• Proceedings of the IEEK Conference
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• 2000.11d
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• pp.139-142
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• 2000

In this paper, the ADI (Adaptive De-interlacing) algorithm is proposed, which improves visually and subjectively horizontal and vertical edges of the image processed by the ELA(Edge Line-based Average) method. This paper also proposes a VLSI architecture for the proposed algorithm and designed the architecture through the full custom CMOS layout process. The proposed algorithm is verified using C and Matlab and implemented using 0.6$\mu\textrm{m}$ 2-poly 3-metal CMOS standard libraries. For the circuit and logic simulation, Cadence tool is used.

• The Transactions of the Korean Institute of Power Electronics
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• v.6 no.6
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• pp.564-571
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• 2001

This paper presents the VLSI design of highly efficient low voltage DC/DC converter for portable devices. All active devices are integrated on a single chip using a standard 0.65$\mu\textrm{m}$ CMOS process. The converter operates at the switching frequency of 1MHz for reducing the size of passive elements and uses a ZVS for minimizing the switching loss at high frequency. Simulation results show that the circuit can achieve a 95% efficiency when the output voltage is controlled to be 2V with the load of lW.

• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.2
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• pp.184-188
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• 2014

There is a trade-off between read stability and writability under a full-/half-select condition in static random access memory (SRAM). Another trade-off in the minimum operating voltage between the read and write operation also exists. A new peripheral circuit for SRAM arrays, called a variation sensor, is demonstrated here to balance the read/write margins (i.e., to optimize the read/write trade-off) as well as to lower the minimum operation voltage for both read and write operations. A test chip is fabricated using an industrial 45-nm bulk complementary metal oxide semiconductor (CMOS) process to demonstrate the operation of the variation sensor. With the variation sensor, the word-line voltage is optimized to minimize the trade-off between read stability and writability ($V_{WL,OPT}=1.055V$) as well as to lower the minimum operating voltage for the read and write operations simultaneously ($V_{MIN,READ}=0.58V$, $V_{MIN,WRITE}=0.82V$ for supply voltage $(V_{DD})=1.1V$).

• JSTS:Journal of Semiconductor Technology and Science
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• v.17 no.4
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• pp.561-567
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• 2017

This paper presents a 4-channel common-cathode VCSEL driver array operating up to 6.25 Gb/s per channel for the applications of HDMI 2.0 active optical cables. The proposed VCSEL driver consists of an input buffer, a modified Cherry-Hooper amplifier as a pre-driver, and a main driver with pre-emphasis to drive a common-cathode VCSEL diode at high-speed full switching operations. Particularly, the input buffer merges a linear equalizer not only to broaden the bandwidth, but to reduce power consumption simultaneously. Measured results of the proposed 4-channel VCSEL driver array implemented in a $0.13-{\mu}m$ CMOS process demonstrate wide and clean eye-diagrams for up to 6.25-Gb/s operation speed with the bias current 2.0 mA and the modulation currents of $3.1mA_{PP}$. Chip core occupies the area of $0.15{\times}0.1{\mu}m^2$ and dissipate 22.8 mW per channel.

• JSTS:Journal of Semiconductor Technology and Science
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• v.15 no.2
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• pp.202-207
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• 2015

A CMOS relaxation oscillator, with high robustness over process, voltage and temperature (PVT) variations, is designed in $0.18{\mu}m$ CMOS. The proposed oscillator, consisting of full-differential charge-discharge timing circuit and switched-capacitor based voltage-to-current conversion, could be expanded to a simple open-loop frequency synthesizer (FS) with output frequency digitally tuned. Experimental results show that the proposed oscillator conducts subcarrier generation for frequency-modulated ultra-wideband (FM-UWB) transmitters with triangular amplitude distortion less than 1%, and achieves frequency deviation less than 8% under PVT and phase noise of -112 dBc/Hz at 1 MHz offset frequency. Under oscillation frequency of 10.5 MHz, the presented design has the relative FS error less than 2% for subcarrier generation and the power dissipation of 0.6 mW from a 1.8 V supply.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2008.10a
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• pp.91-94
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• 2008

The designed module save to memory after received Image from CMOS image Sensor(CIS), and set a motion of Encoder module, read from memory per one macroblock each original Image and reference image then supply or save. the time required 470 cycle when processed one macroblock. For designed construct verification, I develop reference Encoder C like JM 9.4 and I proved this module with test vector which achieved from reference encoder C.

• Proceedings of the Korean Society of Broadcast Engineers Conference
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• 2009.01a
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• pp.512-515
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• 2009

A 90-nm CMOS motion estimation (ME) processor was developed by employing dynamic voltage and frequency scaling (DVFS) to greatly reduce the dynamic power. To make full use of the advantages of DVFS, a fast ME algorithm and a small on-chip DC/DC converter were also developed. The fast ME algorithm can adaptively predict the optimum supply voltage ($V_D$) and the optimum clock frequency ($f_c$) before each block matching process starts. Power dissipation of the ME processor, which contained an absolute difference accumulator as well as the on-chip DC/DC converter and DVFS controller, was reduced to $31.5{\mu}W$, which was only 2.8% that of a conventional ME processor.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.43 no.6 s.348
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• pp.53-61
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• 2006

In high speed flash type or pipelining type A/D Converter, the faster sampling frequency is, the more the effect of DC reference fluctuation is increased by clock feed-through and kick-back. When we measure A/D Converter, further, external noise increases reference voltage fluctuation. Thus reference fluctuation reduction circuit must be needed in high speed A/D converter. Conventional circuit simply uses capacitor but layout area is large and it's not efficient. In this paper, a reference fluctuation reduction circuit using transmission gate is proposed. In order to verify the proposed technique, we designed and manufactured 6bit 2GSPS CMOS A/D converter. The A/D converter is based on 0.18um 1-poly 5-metal N-well CMOS technology, and it consumes 145mW at 1.8V power supply. It occupies chip area of $977um\times1040um$. Experimental result shows that SNDR is 36.25 dB and INL/DNL ${\pm}0.5LSB$ when sampling frequency is 2GHz.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.28 no.11A
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• pp.929-935
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• 2003

An analog/digital mixed mode ASIC for network synchronization of ATM switching system has been designed and fabricated. This ASIC generates a 234.7/46.94 ㎒ system clock and 77.76/19.44 ㎒ user clock using 46.94 ㎒ transmitted clocks from other systems. It also includes digital circuits for checking and selecting of the transmitted clocks. For effective ASIC design, full custom technique is used in 2 analog PLL circuits design, and standard cell based technique is used in digital circuit design. Resistors and capacitors for analog circuits are specially designed which can be fabricated in general CMOS technology, so the chip can be implemented in 0.8$\mu\textrm{m}$ digital CMOS technology with no expensive. Testing results show stable 234.7 ㎒ and 19.44 ㎒ clocks generation with each 4㎰ and 17㎰ of low ms jitter.

• Journal of IKEEE
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• v.13 no.1
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• pp.41-48
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• 2009

This paper describes an implementation of the analog front end (AFE) incorporated with the image signal processing (ISP) unit in the SoC, dominating the performance of the CCD image sensor system. New schemes are exploited in the high-frequency sampling to reduce the sampling uncertainty apparently as the frequency increases, in the structure for the wide-range variable gain amplifier (VGA) capable of $0{\sim}36\;dB$ exponential gain control to meet the needed bandwidth and accuracy by adopting a new parasitic insensitive capacitor array. Moreover, the double cancellation of the black-level noise was efficiently achieved both in the analog and the digital domain. The proposed topology fabricated in a $0.35-{\mu}m$ CMOS process was proved in a full CCD camera system of 10-bit accuracy, dissipating 80 mA at 15 MHz with a 3.3 V supply voltage.