• Title/Summary/Keyword: Free silicon

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Point-diffraction interferometer for 3-D profile measurement of light scattering rough surfaces (광산란 거친표면의 고정밀 삼차원 형상 측정을 위한 점회절 간섭계)

  • 김병창;이호재;김승우
    • Korean Journal of Optics and Photonics
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    • v.14 no.5
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    • pp.504-508
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    • 2003
  • We present a new point-diffraction interferometer, which has been devised for the three-dimensional profile measurement of light scattering rough surfaces. The interferometer system has multiple sources of two-point-diffraction and a CCD camera composed of an array of two-dimensional photodetectors. Each diffraction source is an independent two-point-diffraction interferometer made of a pair of single-mode optical fibers, which are housed in a ceramic ferrule to emit two spherical wave fronts by means of diffraction at their free ends. The two spherical wave fronts then interfere with each other and subsequently generate a unique fringe pattern on the test surface. A He-Ne source provides coherent light to the two fibers through a 2${\times}$l optical coupler, and one of the fibers is elongated by use of a piezoelectric tube to produce phase shifting. The xyz coordinates of the target surface are determined by fitting the measured phase data into a global model of multilateration. Measurement has been performed for the warpage inspection of chip scale packages (CSPs) that are tape-mounted on ball grid arrays (BGAs) and backside profile of a silicon wafer in the middle of integrated-circuit fabrication process. When a diagonal profile is measured across the wafer, the maximum discrepancy turns out to be 5.6 ${\mu}{\textrm}{m}$ with a standard deviation of 1.5 ${\mu}{\textrm}{m}$.

Influence of Alumina on Hydrothermal Synthesis of 11Å Tobermorite (알루미나가 11Å Tobermorite의 수열합성에 미치는 영향)

  • Yim Going;Yim Chai Suk
    • Korean Journal of Materials Research
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    • v.15 no.2
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    • pp.97-105
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    • 2005
  • [ $11\AA$ ] tobermorite$(5CaO{\cdot}6SiO_2{\cdot}5H_2O)$ is synthesized from the mixtures of calcium hydroride and quartz using alumina in a molar ratio $Ca(OH)_2/SiO_2$ of 0.8 at $180^{\circ}C$ for 8 and 24 hrs under saturated steam pressure. The influence of alumina on the formation of $11\AA$ tobermorite was investigated by X-ray diffraction, differential thermal analysis and infrared spectroscopy. $11\AA$ tobermorite containing increasingly larger amounts of aluminum showed a shift of the basal spacing from 11.3 to $11.6\AA$. In general, there was a direct linear relation between the basal spacing and added content of alumina. The differential thermal analysis curves showed that $11\AA$ tobermorite with increasing alumina contents exhibited the exothermic peak at high temperature, namely $11\AA$ tobermorite containing aluminum gave a sharp exothermic peak at temperature around $850\~860^{\circ}C$ in the case of $S_3\~S_5$. The absorption band at $1607\~1620cm^{-1}$ is attributed to the bending vibration of water, and the position of the main O-H stretching and Si-O lattice vibration of $11\AA$ tobermorite at 3500 and $965cm^{-1}$ respectively is not altered. Consequently the existence of alumina accelerates the crystallization of $11\AA$ tobermorite, and that the aluminum ion appears to substitute for the silicon ion in $11\AA$ tobermorite structure. Al-containing tobermorite is distinguished from Al-free tobermorite.

Phase Distribution and Interface Chemistry by Solid State SiC/Ni Reaction

  • Lim, Chang-Sung;Shim, Kwang-Bo;Shin, Dong-Woo;Auh, Keun-Ho
    • The Korean Journal of Ceramics
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    • v.2 no.1
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    • pp.19-24
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    • 1996
  • The phase distribution and interface chemistry by the solid-state reaction between SiC and nickel were studied at temperatures between $550 \;and\; 1250^{\circ}C$ for 0.5-100 h. The reaction with the formation of silicides and carbon was first observed above $650^{\circ}C$. At $750^{\circ}C$, as the reaction proceeded, the initially, formed $Ni_3Si_2$ layer was converted to $Ni_2$Si. The thin nickel film reacted completely with SiC after annealing at $950^{\circ}C$ for 2 h. The thermodynamically stable $Ni_2$Si is the only obsrved silicide in the reaction zone up to $1050^{\circ}C$. The formation of $Ni_2$Si layers with carbon precipitates alternated periodically with the carbon free layers. At temperatures between $950^{\circ}C$ and $1050^{\circ}C$, the typical layer sequences in the reaction zone is determined by quantitative microanalysis to be $SiC/Ni_2$$Si+C/Ni_2$$Si/Ni_2$$Si+C/…Ni_2$Si/Ni(Si)/Ni. The mechanism of the periodic band structure formation with the carbon precipitation behaviour was discussed in terms of reaction kinetics and thermodynamic considerations. The reaction kinetics is proposed to estimate the effective reaction constant from the parabolic growth of the reaction zone.

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Synthesis of Silica Aerogel and Thin Film Coating at Ambient (상입하에서의 실리카 에어로겔의 합성 및 박막코팅(I))

  • 양희선;최세영
    • Journal of the Korean Ceramic Society
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    • v.34 no.2
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    • pp.188-194
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    • 1997
  • Wet gel with surface modification by TMCS was redispersed in EtOH and redispersed silica sol for coat-ing was prepared. After spin coating of redispersed sol was conducted on silicon substrate, processes of drying(8$0^{\circ}C$) and heat treatment(>25$0^{\circ}C$) were, followed at ambient pressure. The influence of heat treat-ment of properties of film was observed, changing temperature at heat treatment. The optimum redisp-ersion condition for stable silica sol was wet gel:EtOH=1g:110$m\ell$ and the concentration and viscosity of redispersed silica sol with average particle size of 30nm were 0.11 M, 2.0-2.2 cP respectively. Crack-free thin film with the refractive index of 1.14 and thickness of 400 nm was obtained through drying at 8$0^{\circ}C$ and subsequent heat treatment at 45$0^{\circ}C$ for 2 hrs respectively after spin coating of 1500rpm, 10 times.

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Variations of Water Environments and Species Compositions of Microalgae during Summer in the Coast of Dokdo, Korea (독도 연안의 하계 수환경과 미세조류의 종조성 변화)

  • Kim, Mi-Kyung;Shin, Jae-Ki
    • ALGAE
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    • v.22 no.3
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    • pp.193-199
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    • 2007
  • This study was carried out to investigate the charateristics of environmental factors and the species compositions of phytoplanktons and periphytons in order to analyze the marine ecosystem (DOK1-3) with freshwater (Mul) in the coast of Dokdo. Mean values of conductivity (TSD) (44.3 mS cm–1), total dissolved solids (30.9 mg L–1), salinity (31.8 psu), total suspended solids (39.2 mg L–1), and ash-free dry matter (AFDM) (8.8 mg L–1) were higher in DOK1- 3 than those in Mul (3.2 mS cm–1, 2.3 mg L–1, 1.9 psu, 2.8 mg L–1 and 2.8 mg L–1, espectively), while mean amounts of soluble reactive phosphorus (SRP) (7.5 μg P L–1) and soluble reactive silicon (SRS) (0.1 μg Si L–1) were significantly lower in DOK1-3 than those in Mul (117.3 μg P L–1 and 4,105 μg Si L–1, respectively). The phytoplanktons was a total of 59 species in Dokdo, which were composed of 1 species (1.7%) for Chrysophyceae, 43 species (72.9%) for Bacillariophyceae and 15 species (25.4%) for Dinophyceae. The biomass (Chl-a, phaeopigment and AFDM) of epilithic algae (ELA), epizooic algae (EZA) and epiphytic algae (EPA) were varied with the kinds of substrates (EPA > ELA > EZA) in the whole stations. Water environments was comparatively clean in the coast of Dokdo as comparing with those of the land. However, the monitoring of marine ecosystem in the Dokdo should be continued for species conservation according to the global warming by the climatic change.

Design of a Gate-VDD Drain-Extended PMOS ESD Power Clamp for Smart Power ICs (Smart Power IC를 위한 Gate-VDD Drain-Extened PMOS ESD 보호회로 설계)

  • Park, Jae-Young;Kim, Dong-Jun;Park, Sang-Gyu
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.45 no.10
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    • pp.1-6
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    • 2008
  • The holding voltage of the high-voltage MOSFETs in snapback condition is much smaller than the power supply voltage. Such characteristics may cause the latcup-like problems in the Smart Power ICs if these devices are directly used in the ESD (Electrostatic Discharge) power clamp. In this work, a latchup-free design based on the Drain-Extended PMOS (DEPMOS) adopting gate VDD structure is proposed. The operation region of the proposed gate-VDD DEPMOS ESD power clamp is below the onset of the snapback to avoid the danger of latch-up. From the measurement on the devices fabricated using a $0.35\;{\mu}m$ BCD (Bipolar-CMOS-DMOS) Process (60V), it was observed that the proposed ESD power clamp can provide 500% higher ESD robustness per silicon area as compared to the conventional clamps with gate-driven LDMOS (lateral double-diffused MOS).

Effect of Ti and Si Interlayer Materials on the Joining of SiC Ceramics

  • Jung, Yang-Il;Park, Jung-Hwan;Kim, Hyun-Gil;Park, Dong-Jun;Park, Jeong-Yong;Kim, Weon-Ju
    • Nuclear Engineering and Technology
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    • v.48 no.4
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    • pp.1009-1014
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    • 2016
  • SiC-based ceramic composites are currently being considered for use in fuel cladding tubes in light-water reactors. The joining of SiC ceramics in a hermetic seal is required for the development of ceramic-based fuel cladding tubes. In this study, SiC monoliths were diffusion bonded using a Ti foil interlayer and additional Si powder. In the joining process, a very low uniaxial pressure of ~0.1 MPa was applied, so the process is applicable for joining thin-walled long tubes. The joining strength depended strongly on the type of SiC material. Reaction-bonded SiC (RB-SiC) showed a higher joining strength than sintered SiC because the diffusion reaction of Si was promoted in the former. The joining strength of sintered SiC was increased by the addition of Si at the Ti interlayer to play the role of the free Si in RB-SiC. The maximum joint strength obtained under torsional stress was ~100 MPa. The joint interface consisted of $TiSi_2$, $Ti_3SiC_2$, and SiC phases formed by a diffusion reaction of Ti and Si.

Direct synthesis mechanism of amorphous $SiO_x$ nanowires from Ni/Si substrate (Ni/Si 기판을 사용하여 성장시킨 비결정질 $SiO_x$ 나노 와이어의 성장 메커니즘)

  • Song, W.Y.;Shin, T.I.;Lee, H.J.;Kim, H.;Kim, S.W.;Yoon, D.H.
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.16 no.6
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    • pp.256-259
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    • 2006
  • The amorphous $SiO_x$ nanowires were synthesized by the vapor phase epitaxy (VPE) method. $SiO_x$ nanowires were formed on silicon wafer of temperatures ranged from $800{\sim}1100^{\circ}C$ and nickel thin film was used as a catalyst for the growth of nanowires. A vapor-liquid-solid (VLS) mechanism is responsible for the catalyst-assisted amorphous $SiO_x$ nanowires synthesis in this experiment. The SEM images showed cotton-like nanostructure of free standing $SiO_x$ nanowires with the length of more than about $10{\mu}m$. The $SiO_x$ nanowires were confirmed amorphous structure by TEM analysis and EDX spectrum reveals that the nanowires consist of Si and O.

Characterization of Low-temperature Conductive Films Bonded PV Modules and Its Field Test (저온 전도성 필름으로 본딩된 태양광 모듈의 특성 평가 및 실증 연구)

  • Baek, Su-Wung;Choi, Kwang-Il;Lee, Suk-Ho;Cheon, Chan-Hyuk;Hong, Seung-Min;Lee, Kil-Song;Shin, Hyun-Woo;Yang, Yeon-Won;Lim, Cheol-Hyun
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.27 no.3
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    • pp.189-194
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    • 2014
  • In this paper, PV modules using a low-temperature conductive film(LT-CF) as a bonding material between a cell and a solder free ribbon were produced and chracterized, which is more environmental-friendly, cost effective and high efficient. Mainly, filed electrical performance of PV modules using three different types of bonding material; a convetional solder ribbon(SR), a LT-CF and a light-capturing Ribbon(LCR) were compared to comfirm the feasibility of LT-CF as a bonding material. The filed test were conducted for 3 months and results were discussed in terms of amount of output energy production and efficiency.

Non-contact Transportation of Flat Panel Substrate by Combined Ultrasonic Acoustic Viscous and Aerostatic Forces

  • Isobe, Hiromi;Fushimi, Masaaki;Ootsuka, Masami;Kyusojin, Akira
    • International Journal of Precision Engineering and Manufacturing
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    • v.8 no.2
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    • pp.44-48
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    • 2007
  • In recent years, the size of plane substrates and semiconductor wafers has increased. As conventional contact transportation systems composed of, for example, carrier rollers, belt conveyers, and robot hands carry these longer and wider substrates, the increased weight results in increased potential for fracture. A noncontact transportation system is required to solve this problem. We propose a new noncontact transportation system combining acoustic viscous and aerostatic forces to provide damage-free transport. In this system, substrates are supported by aerostatic force and transported by acoustic viscous streaming induced by traveling wave deformation of a disk-type stator. A ring-type piezoelectric transducer bonded on the stator excites vibration. A stator with a high Q piezoelectric transducer can generate traveling vibrations with amplitude of $3.2{\mu}m$. Prior to constructing a carrying road for substrates, we clarified the basic properties of this technique and stator vibration characteristics experimentally. We constructed the experimental equipment using a rotational disk with a 95-mm diameter. Electric power was 70 W at an input voltage of 200 Vpp. A rotational torque of $8.5\times10^{-5}Nm$ was obtained when clearance between the stator and disk was $120{\mu}m$. Finally, we constructed a noncontact transport apparatus for polycrystalline silicon wafers $(150(W)\times150(L)\times0.3(t))$, producing a carrying speed of 59.2 mm/s at a clearance of 0.3 mm between the stator and wafer. The carrying force when four stators acted on the wafer was $2\times10^{-3}N$. Thus, the new noncontact transportation system was demonstrated to be effective.