Journal of the Korean Crystal Growth and Crystal Technology (한국결정성장학회지)

The Korea Association of Crystal Growth (한국결정성장학회)
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Direct synthesis mechanism of amorphous $SiO_x$ nanowires from Ni/Si substrate

Ni/Si 기판을 사용하여 성장시킨 비결정질 $SiO_x$ 나노 와이어의 성장 메커니즘

  • Song, W.Y. (Sungkyunkwan Advanced Institute of Nanotechnology(SAINT), Sungkyunkwan University) ;
  • Shin, T.I. (Dept. of Advanced Materials Engineering, Sungkyunkwan University) ;
  • Lee, H.J. (Dept. of Advanced Materials Engineering, Sungkyunkwan University) ;
  • Kim, H. (Dept. of Advanced Materials Engineering, Sungkyunkwan University) ;
  • Kim, S.W. (School of Advanced Materials and System Engineering, Kumoh National Institute of Technology) ;
  • Yoon, D.H. (Sungkyunkwan Advanced Institute of Nanotechnology(SAINT), Sungkyunkwan University)
  • Published : 2006.12.31
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Abstract

The amorphous $SiO_x$ nanowires were synthesized by the vapor phase epitaxy (VPE) method. $SiO_x$ nanowires were formed on silicon wafer of temperatures ranged from $800{\sim}1100^{\circ}C$ and nickel thin film was used as a catalyst for the growth of nanowires. A vapor-liquid-solid (VLS) mechanism is responsible for the catalyst-assisted amorphous $SiO_x$ nanowires synthesis in this experiment. The SEM images showed cotton-like nanostructure of free standing $SiO_x$ nanowires with the length of more than about $10{\mu}m$. The $SiO_x$ nanowires were confirmed amorphous structure by TEM analysis and EDX spectrum reveals that the nanowires consist of Si and O.

Vapor phase epitaxy(VPE)법을 사용하여 amorphous $SiO_x$. nanowires를 성장시켰다. Ni thin film을 촉매로 사용하여 Si 기판위에 $800{\sim}1100^{\circ}C$ 범위의 온도에서 성장시켰으며, $SiO_x$ nanowires의 성장 메커니즘은 Vapor-liquid-solid(VLS)으로 확인되었다. $SiO_x$ nanowires의 shape와 morphology는 scanning electron microscope(SEM)으로 분석하였으며, cotton-like형태이고 길이는 $10{\mu}m$정도였다. 그리고 구조적 특징은 transmission electron microscope(TEM)으로 관찰하였고, $SiO_x$ nanowires의 성분 분석은 energy dispersed X-ray spectroscopy(EDS)로 하였다. EDX spectrum으로 nanowires가 Si와 O로 구성되어졌음을 확인하였다.

Keywords

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