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Direct synthesis mechanism of amorphous $SiO_x$ nanowires from Ni/Si substrate  

Song, W.Y. (Sungkyunkwan Advanced Institute of Nanotechnology(SAINT), Sungkyunkwan University)
Shin, T.I. (Dept. of Advanced Materials Engineering, Sungkyunkwan University)
Lee, H.J. (Dept. of Advanced Materials Engineering, Sungkyunkwan University)
Kim, H. (Dept. of Advanced Materials Engineering, Sungkyunkwan University)
Kim, S.W. (School of Advanced Materials and System Engineering, Kumoh National Institute of Technology)
Yoon, D.H. (Sungkyunkwan Advanced Institute of Nanotechnology(SAINT), Sungkyunkwan University)
Publication Information
Journal of the Korean Crystal Growth and Crystal Technology / v.16, no.6, 2006 , pp. 256-259 More about this Journal
Abstract
The amorphous $SiO_x$ nanowires were synthesized by the vapor phase epitaxy (VPE) method. $SiO_x$ nanowires were formed on silicon wafer of temperatures ranged from $800{\sim}1100^{\circ}C$ and nickel thin film was used as a catalyst for the growth of nanowires. A vapor-liquid-solid (VLS) mechanism is responsible for the catalyst-assisted amorphous $SiO_x$ nanowires synthesis in this experiment. The SEM images showed cotton-like nanostructure of free standing $SiO_x$ nanowires with the length of more than about $10{\mu}m$. The $SiO_x$ nanowires were confirmed amorphous structure by TEM analysis and EDX spectrum reveals that the nanowires consist of Si and O.
Keywords
Nanowires synthesis; Growth mechanism; Vapor phase epitaxy method;
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