• 제목/요약/키워드: Floating N+

검색결과 204건 처리시간 0.03초

실리콘 나노와이어 N-채널 GAA MOSFET의 항복특성 (Breakdown Characteristics of Silicon Nanowire N-channel GAA MOSFET)

  • 류인상;김보미;이예린;박종태
    • 한국정보통신학회논문지
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    • 제20권9호
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    • pp.1771-1777
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    • 2016
  • 본 논문에서는 나노와이어 N-채널 GAA MOSFET의 항복전압 특성을 측정과 3 차원 소자 시뮬레이션을 통하여 분석하였다. 측정에 사용된 나노와이어 GAA MOSFET는 게이트 길이가 250nm이며 게이트 절연층 두께는 6nm이며 채널 폭은 400nm부터 3.2um이다. 측정 결과로부터 나노와이어 GAA MOSFET의 항복전압은 게이트 전압에 따라 감소하다가 높은 게이트 전압에서는 증가하였다. 나노와이어의 채널 폭이 증가할수록 항복전압이 감소한 것은 floating body 현상으로 채널의 포텐셜이 증가하여 기생 바이폴라 트랜지스터의 전류 이득이 증가한 것으로 사료된다. 게이트 스트레스로 게이트 절연층에 양의 전하가 포획되면 채널 포텐셜이 증가하여 항복전압이 감소하고 음의 전하가 포획되면 포텐셜이 감소하여 항복전압이 증가하는 것을 알 수 있었다. 항복전압의 측정결과는 소자 시뮬레이션의 포텐셜 분포와 일치하는 것을 알 수 있었다.

Floating zone법에 의한 Nb를 첨가한 strontium titanate 단결정 성장 (Nb doped strontium titanate single crystal growth by floating zone method)

  • 전병식;조현;오근호
    • 한국결정성장학회지
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    • 제5권3호
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    • pp.215-222
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    • 1995
  • Floating zone법으로 $SrTiO_3$$Nb_2O_5$를 02wt% 첨가한 단결정을 육성하였다. 결정성장시 성장분위기로는 air와 질소분위기에서 각각 결정을 육성하였으며, 원료봉의 소결온도 따른 성장계면양상을 조사하였다. 성장조건으로는 성장속도는 5mm/hr, 상부축과 하부축의 회전속도는 30rpm이었고, air분위기시 air의 유량은 1.5 ${\ell}/min$, 질소분위기시 질소가스의 유량은 0.5 ${\ell}/min$이었다. 육성한 결정을 XRD, Laue, chemical etching 등의 분석을 하였으며, 질소분위기에서 annealing 한 후 비저항을 측정하였으며 이를 통해 activation energy를 조사하였다.

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Electrical Characteristics of Single-silicon TFT Structure with Symmetric Dual-gate for Kink Effect Suppression

  • Kang Ey-Goo;Lee Dae-Yeon;Lee Chang-Hun;Kim Chang-Hun;Sung Man-Young
    • Transactions on Electrical and Electronic Materials
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    • 제7권2호
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    • pp.53-57
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    • 2006
  • In this paper, a Symmetric Dual-gate Single-Si TFT, which includes three split floating n+ zones, is simulated. This structure drastically reduces the kink-effect and improves the on-current. This is due to the separated floating n+ zones, the transistor channel region is split into four zones with different lengths defined by a floating n+ region. This structure allows effective reduction in the kink-effect, depending on thy length of the two sub-channels. The on-current of the proposed dual-gate structure is 0.9 mA, while that of the conventional dual-gate structure is 0.5 mA, at both 12 V drain and 7 V gate voltages. This result shows an 80% enhancement in on-current. In addition, the reduction of electric field in the channel region compared to a conventional single-gate TFT and the reduction of the output conductance in the saturation region, is observed. In addition, the reduction in hole concentration, in the channel region, in order for effectively reducing the kink-effect, is also confirmed.

Flash EEPROM에서 부유게이트의 도핑 농도가 소거 특성에 미치는 영향 (Effects of the Doping Concentration of the Floating Gate on the Erase Characteristics of the Flash EEPROM's)

  • 이재호;신봉조;박근형;이재봉
    • 전자공학회논문지D
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    • 제36D권11호
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    • pp.56-62
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    • 1999
  • Flash EEPROM에서 칩 전체나 또는 칩의 한 블록에 속에 있는 모든 셀들의 소거는 Fowler-Nordheim (FN) 터널링 방식을 사용하여 일괄적으로 수행되고 있다. 이러한 FN 터널링에 의한 소거는 self-limited 공정이 아니기 때문에 일부의 셀들이 심하게 과소거되는 문제가 자주 발생하고 있다. 본 논문에서는 이러한 과소거 문제를 해결하기 위한 부유게이트의 최적 도핑 농도에 관하여 연구하였다. 이러한 연구를 위하여 다양한 도핑 농도를 갖는 n-type MOSFET과 MOS 커패시터를 제작하였고, 이 소자들의 전기적인 특성들을 측정 및 분석하였다. 실험 결과, 부유게이트의 도핑 농도가 충분히 낮다면 ($1.3{\times}10^{18}/cm^3$ 이하) 과소거가 방지될 수 있음을 볼 수 있었다. 이는, 소거시 부유게이트에 저장되었던 전자들의 대부분이 빠져나가면 부유게이트에 공핍층이 형성되어 부유게이트와 소스 사이의 전압 차가 감소하고 따라서 소거가 자동적으로 멈추기 때문이라고 판단된다. 반면에 부유게이트의 도핑 농도가 너무 낮을 경우 ($1.3{\times}10^{17}/cm^3$ 이하)에는 문턱 전압과 gm의 균일도가 크게 나빠졌는데, 이는 부유게이트에서 segregation으로 인한 불순물의 불균일한 손실에 의한 것이로 판단된다. 결론적으로 Flash EEPROM에서 과소거 현상을 방지하고 균일한 문턱 전압과 gm을 갖기 위한 최적의 부유게이트의 도핑 농도는 $1.3{\times}10^{17}/cm^3$에서 $1.3{\times}10^{18}/cm^3$의 범위인 것으로 발견되었다.

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초소형 영상시스템을 위한 광센서 제조 및 특성평가 (Fabrication and Characterization of Photo-Sensors for Very Small Scale Image System)

  • 신경식;백경갑;이영석;이윤희;박정호;주병권
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2000년도 춘계학술대회 논문집 디스플레이 광소자 분야
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    • pp.187-190
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    • 2000
  • We fabricated general photo diode, surface etched photo diode and floating gate MOSFET by CMOS process. In a design stage, we expect that surface etched photo diode will be improved as to photo sensitivity. However, because the surface of silicon was damaged in etching process, the surface etched diode had a high dark current as well as low photo current level. Finally, we examined the current-voltage properties for the floating gate MOSFET on n-well and confirmed that the device can be act as an efficient photo-sensor. The floating gate MOSFET was operated in parasitic bipolar transistor mode.

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부동소수점 기반의 포맷 컨버터를 이용한 효율적인 지수 함수 근사화 알고리즘의 FPGA 구현 (Implementation of Efficient Exponential Function Approximation Algorithm Using Format Converter Based on Floating Point Operation in FPGA)

  • 김정섭;정슬
    • 제어로봇시스템학회논문지
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    • 제15권11호
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    • pp.1137-1143
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    • 2009
  • This paper presents the FPGA implementation of efficient algorithms for approximating exponential function based on floating point format data. The Taylor-Maclaurin expansion as a conventional approximation method becomes inefficient since high order expansion is required for the large number to satisfy the approximation error. A format converter is designed to convert fixed data format to floating data format, and then the real number is separated into two fields, an integer field and an exponent field to separately perform mathematic operations. A new assembly command is designed and added to previously developed command set to refer the math table. To test the proposed algorithm, assembly program has been developed. The program is downloaded into the Altera DSP KIT W/STRATIX II EP2S180N Board. Performances of the proposed method are compared with those of the Taylor-Maclaurin expansion.

부동소수점수 N차 제곱근 K차 골드스미스 알고리즘 (Floating Point Number N'th Root K'th Order Goldschmidt Algorithm)

  • 조경연
    • 한국멀티미디어학회논문지
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    • 제22권9호
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    • pp.1029-1035
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    • 2019
  • In this paper, a tentative Kth order Goldschmidt floating point number Nth root algorithm for K order convergence rate in one iteration is proposed by applying Taylor series to the Goldschmidt square root algorithm. Using the proposed algorithm, Nth root and Nth inverse root can be computed from iterative multiplications without division. It also predicts the error of the algorithm iteration. It iterates until the predicted error becomes smaller than the specified value. Since the proposed algorithm only performs the multiplications until the error gets smaller than a given value, it can be used to improve the performance of a floating point number Nth root unit.

농업용 저수지에 설치한 인공식물섬에 의한 오염물질 농도의 변화 (Changes in Pollutant Concentrations by Artificial Floating Island Installed in Reservoir for Irrigation)

  • 양홍모
    • 한국환경복원기술학회지
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    • 제9권2호
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    • pp.23-32
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    • 2006
  • Total suspended solids (TSS), five-day biochemical oxygen demand ($BOD_5$), total nitrogen (T-N), and total phosphorous (T-P) concentrations around and under a floating island were examined from October 2002 to September 2003. The island was installed in July 2002 on the surface of an agricultural irrigation reservoir located in the southern part of the Korean Peninsula. It was composed of six polyethylene panels. Each panel was 2 m (length) ${\times}$ 1 m (width) ${\times}$ 0.02 m (thick) and had about thirty-two holes each with a diameter of eight centimeters, through which plant roots grew down into the water. Coconut fibers of nine-centimeters in height were placed on the panel, which sustained plants rhizomes and roots. Both the fibers and the panel were raped with polyethylene wire mashes. About thirty irises (Iris pseudoacorus) were planted into the fibers of each panel. The concentrations of TSS, $BOD_5$, T-N and T-P below the island during the iris-growing season averaged 9.70, 2.59, 3.61 and 0.14 mg/L, respectively and those around it averaged 9.99, 2.83, 4.07 and 0.16 mg/L, respectively. The average concentrations of TSS, $BOD_5$, T-N and T-P below it during the iris non-growing season were 8.68, 2.37, 3.25 and 0.14 mg/L, respectively and those near it were 8.76, 2.43, 3.34 and 0.15 mg/L, respectively. At a significance level of ${\alpha}$=0.05, $BOD_5$, T-N and T-P concentrations under the island during the iris-growing season were significantly low when compared with those around it except TSS. No differences in TSS, $BOD_5$, T-N and T-P concentrations between around and near it were found at a significance level of ${\alpha}$=0.05 during the iris non-growing season. The removal of $BOD_5$, T-N, and T-P during the growing season were significantly high when compared with those during the non-growing season. TSS abatement of the floating island was very low during both the growing and non-growing seasons. The island's reductions of $BOD_5$, T-N and T-P were good during the growing season, especially T-N and T-P, which have been considered as primary pollutant sources causing the water quality degradation of reservoirs. The removal of T-N and T-P was primarily attributed to the absorption of nitrogen and phosphorous by the irises during the growing season.

Motion Analysis of Two Floating Platforms with Mooring and Hawser Lines in Tandem Moored Operation by Combined Matrix Method and Separated Matrix Method

  • KOO BON-JUN;KIM MOO-HYUN
    • 한국해양공학회지
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    • 제19권5호
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    • pp.1-15
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    • 2005
  • The motion behaviors including hydrodynamic interaction and mechanical coupling effects on multiple-body floating platforms are simulated by using a time domain hull/mooring/riser coupled dynamics analysis program. The objective of this study is to evaluate off-diagonal hydrodynamic interaction effects and mechanical coupling effects on tandem moored FPSO and shuttle taker motions. In the multiple-body floating platforms interaction, hydrodynamic coupling effects with waves and mechanical coupling effects through the connectors should be considered. Thus, in this study, the multiple-body platform motions are calculated by Combined Matrix Method (CMM) as well as Separated Matrix Method (SMM). The advantage of the combined matrix method is that it can include all the 6Nx6N full hydrodynamic and mechanical interaction effects among N bodies. Whereas, due to the larger matrix size, the calculation time of Combined Matrix Method (CMM) is longer than the Separated Matrix Method (SMM). On the other hand, Separated Matrix Method (SMM) cannot include the off-diagonal 6x6 hydrodynamic interaction coefficients although it can fully include mechanical interactions among N bodies. To evaluate hydrodynamic interaction and mechanical coupling effects, tandem moored FPSO and shuttle tanker is simulated by Combined Matrix Method (CMM) and Separated Matrix Method (SMM). The calculation results give a good agreement between Combined Matrix Method (CMM) and Separated Matrix Method (SMM). The results show that the Separated Matrix Method (SMM) is more efficient for tandem moored FPSO and shuttle tanker. In the numerical calculation, the hydrodynamic coefficients are calculated from a 3D diffraction/radiation panel program WAMIT, and wind and current forces are generated by using the respective coefficients given in the OCIMF data sheet.

Halogen floating zone 법에 의한 $LiTaO_3$ 단결정 성장$I.LiTaO_3$단결정 성장특성 ($LiTaO_3$ single crystal growth by the halogen floating zone method I. Growth characteristics of LT single crystals)

  • 류정호;임창성;오근호
    • 한국결정성장학회지
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    • 제7권4호
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    • pp.528-535
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    • 1997
  • Halogen type floating zone system을 이용하여 직경 6 mm, 길이가 20 mm인 조화용융조성(congruently melting composition)의 $LiTaO_3$(LT) 단결정을 성장시켰다. 최적의 분말합성조건, 원료봉의 소결조건, 결정 성장조건을 확립하였다. 공기나 질소분위기에서는 결정성장이 불가능하였으나 아르곤 분위기에서는 안정한 형태의 용융대를 형성 및 유지할 수 있어서 결정성장이 용이하게 진행될 수 있었다. 성장된 결정으로 Laue back reflection pattern, 전이온도, 굴절율분포, 투과율을 측정하여 성장된 결정의 물성을 평가하였다. 성장된 결정의 부분별(top, body, tail) 전이온도 차가 $1^{\circ}C$로 측정되어 floating zone(FZ)법으로 성장된 LT결정이 조성적으로 균일함을 확인할 수 있었다.

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