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http://dx.doi.org/10.6109/jkiice.2016.20.9.1771

Breakdown Characteristics of Silicon Nanowire N-channel GAA MOSFET  

Ryu, In Sang (Department of Electronic Engineering, Incheon National University)
Kim, Bo Mi (Department of Electronic Engineering, Incheon National University)
Lee, Ye Lin (Department of Electronic Engineering, Incheon National University)
Park, Jong Tae (Department of Electronic Engineering, Incheon National University)
Publication Information
Journal of the Korea Institute of Information and Communication Engineering / v.20, no.9, 2016 , pp. 1771-1777 More about this Journal
Abstract
In this thesis, the breakdown voltage characteristics of silicon nanowire N-channel GAA MOSFETs were analyzed through experiments and 3-dimensional device simulation. GAA MOSFETs with the gate length of 250nm, the gate dielectrics thickness of 6nm and the channel width ranged from 400nm to 3.2um were used. The breakdown voltage was decreased with increasing gate voltage but it was increased at high gate voltage. The decrease of breakdown voltage with increasing channel width is believed due to the increased current gain of parasitic transistor, which was resulted from the increased potential in channel center through floating body effects. When the positive charge was trapped into the gate dielectrics after gate stress, the breakdown voltage was decreased due to the increased potential in channel center. When the negative charge was trapped into the gate dielectrics after gate stress, the breakdown voltage was increased due to the decreased potential in channel center. We confirmed that the measurement results were agreed with the device simulation results.
Keywords
Nanowire GAA MOSFET; Breakdown voltage; Floating body effect;
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