Transactions on Electrical and Electronic Materials

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Electrical Characteristics of Single-silicon TFT Structure with Symmetric Dual-gate for Kink Effect Suppression

  • Kang Ey-Goo (School of Information and Communication, Far East University) ;
  • Lee Dae-Yeon (Department of Electrical Engineering, Korea University) ;
  • Lee Chang-Hun (Department of Electrical Engineering, Korea University) ;
  • Kim Chang-Hun (Department of Electrical Engineering, Korea University) ;
  • Sung Man-Young (Department of Electrical Engineering, Korea University)
  • Published : 2006.04.01
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Abstract

In this paper, a Symmetric Dual-gate Single-Si TFT, which includes three split floating n+ zones, is simulated. This structure drastically reduces the kink-effect and improves the on-current. This is due to the separated floating n+ zones, the transistor channel region is split into four zones with different lengths defined by a floating n+ region. This structure allows effective reduction in the kink-effect, depending on thy length of the two sub-channels. The on-current of the proposed dual-gate structure is 0.9 mA, while that of the conventional dual-gate structure is 0.5 mA, at both 12 V drain and 7 V gate voltages. This result shows an 80% enhancement in on-current. In addition, the reduction of electric field in the channel region compared to a conventional single-gate TFT and the reduction of the output conductance in the saturation region, is observed. In addition, the reduction in hole concentration, in the channel region, in order for effectively reducing the kink-effect, is also confirmed.

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References

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