• Proceedings of the Materials Research Society of Korea Conference
• /
• 2002.11a
• /
• pp.65-65
• /
• 2002

• Transactions of the Korean Society of Machine Tool Engineers
• /
• v.17 no.1
• /
• pp.120-125
• /
• 2008

A flip-chip bonding system using DPSS(Diode Pumped Solid State) Nd:YAG laser(wavelength : 1064nm) which shows a good quality in fine pitch bonding is developed. This laser bonder can transfer beam energy to the solder directly and melt it without any physical contact by scanning a bare chip. By using a laser source to heat up the solder balls directly, it can reduce heat loss and any defects such as bridge with adjacent solder, overheating problems, and chip breakage. Comparing to conventional flip-chip bonders, the bonding time can be shortened drastically. This laser precision micro bonder can be applied to flip-chip bonding with many advantage in comparison with conventional ones.

• Journal of Welding and Joining
• /
• v.21 no.4
• /
• pp.25-30
• /
• 2003

There have been many researches for small scale packages such as CSP, BGA, and Flipchip. Underfill encapsulant technology is one of the latest assembly technologies. The underfill encapsulant could enhance the reliability of the packages by flowing into the gap between die and substrate. In this paper, the effects of underfill packages by both aspects of thermal and mechanical reliabilities are studied. Especially, it is focused to value board-level reliability whether by the underfill is applied or not. First of all, The predicted thermal fatigue lifes of underfilled and no underfilled $\mu$ BGA solder joints are performed by Coffin-Manson's equation and FEA program, ANSYS(version 5.62). Also, the thermal fatigue lifes of $\mu$ BGA solder joints are experimented by thermal cycle test during the temperature, 218K to 423k. Consequently, both experimental and numerical study show that $\mu$ BGA with underfill has over ten times better fatigue lift than $\mu$ BGA without underfill.

• Journal of the Microelectronics and Packaging Society
• /
• v.18 no.3
• /
• pp.67-74
• /
• 2011

Keys to high wiring density semiconductor packages include flip-chip bonding and build-up substrate technologies. The current issues are the establishment of a fine pitch flip-chip bonding technology and a low coefficient of thermal expansion (CTE) substrate technology. In particular, electromigration and thermomigration in fine pitch flipchip joints have been recognized as a major reliability issue. In this paper, electromigration and thermomigration in Cu/Sn-3Ag-0.5Cu (SAC305)/Cu flip-chip joints and electromigration in Cu/In/Cu flip chip joints are investigated. In the electromigration test, a large electromigration void nucleation at the cathode, large growth of intermetallic compounds (IMCs) at the anode, a unique solder bump deformation towards the cathode, and the significantly prolonged electromigration lifetime with the underfill were observed in both types of joints. In addition, the effects of crystallographic orientation of Sn on electromigration were observed in the Cu/SAC305/Cu joints. In the thermomigration test, Cu dissolution was accelerated on the hot side, and formation of IMCs was enhanced on the cold side at a thermal gradient of about $60^{\circ}C$/cm, which was lower than previously reported. The rate of Cu atom migration was found comparable to that of electromigration under current conditions.

• Journal of the Korean Institute of Telematics and Electronics D
• /
• v.36D no.9
• /
• pp.1-5
• /
• 1999

In this paper, we proposed a novel branch-line coupler using filp-chip technology. The proposed coupler consists of CPW and inverted microstrip. The CPW is on the GaAs flip-chip substrate, and the inverted microstrip is on the alumina main substrate. The ground plane of the CPW is used as a ground plane of the inverted microstrip. And both the transmission lines are connected by solder bump with each other. The characteristics of thisstructure was calculated by FDTD method. The S21, S31 are -3dB and the phase difference is $90^{\circ}$. The calculated characteristics are the same as those of the regular branch-line coupler. This structure can be applied for various kinds of devices using flipchip technology.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2008.06a
• /
• pp.158-158
• /
• 2008

모바일 정보통신기기를 중심으로 실장모듈의 초소형화, 고집적화로 인해 접속단자의 피치가 점점 미세화 됨에 따라 플립칩 본딩용 접착제에 함유되는 무기충전제인 실리카 필러의 크기도 미세화되고 있다. 본 연구에서는 NCP (non-conductive paste)의 실리카 필러의 크기가 COB(chip-on-board) 플립칩 패키지의 신뢰성에 미치는 영향을 조사하였다. 실험에 사용된 실리카 필러는 Fused silica 3 종과 Fumed silica 3종이며 response surface 실험계획법에 따라 혼합하여 최적의 혼합비를 정하였다. 테스트베드로 사용된 실리콘 다이는 투께 $700{\mu}m$, 면적 5.2$\times$7.2mm로 $50\times50{\mu}m$ 크기의 Au 도금범프를 $100{\mu}m$ 피치, peripheral 방식으로 형성시켰으며, 기판은 패드를 Sn으로 finish 하였다. 기판을 플라즈마 전처리 후 Panasonic FCB-3 플립칩 본더를 이용하여 플립칩 본딩을 수행하였다. 패키지의 신뢰성 평가를 위해 $-40^{\circ}C{\sim}80^{\circ}C$의 열충격시험과 $85^{\circ}C$/85%R.H.의 고온고습시험을 수행하였으며 Die shear를 통한 접합 강도와 4-point probe를 통한 접속저항을 측정하였다.

• Journal of the Institute of Electronics and Information Engineers
• /
• v.54 no.6
• /
• pp.25-29
• /
• 2017

This paper presents a hetero-integration of electrostatically actuated RF MEMS Switch and step up DC-DC converter on a redistribution layer using commercial PCB process. RF characteristics of Duroid with $56{\Omega}$ impedance GCPW transmission line and that of FR4 with $59{\Omega}$ impedance CPW transmission line were analyzed. From DC to 6GHz, RF characteristics of Duroid were better than that of FR4, insertion loss was 2.08dB lower, return loss was 3.91dB higher, and isolation was 3.33dB higher.