• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.25 no.4
• /
• pp.266-269
• /
• 2012

The most recently IGBT (insulated gate bipolar mode transistor) devices are in the most current conduction capable devices and designed to the big switching power device. Use this number of the devices are need to high voltage and low on-state voltage drop. And then in this paper design of field stop IGBT is insert N buffer layer structure in NPT planar IGBT and optimization design of field stop IGBT and trench field stop IGBT, both devices have a comparative analysis and reflection of the electrical characteristics. As a simulation result, trench field stop IGBT is electrical characteristics better than field stop IGBT.

• Transactions on Electrical and Electronic Materials
• /
• v.17 no.1
• /
• pp.50-55
• /
• 2016

In this paper, we have analyzed the electrical characteristics of 1200V trench gate field stop IGBT and have compared to NPT planar type IGBT and NPT planar field stop IGBT. As a result of analyzing, we obtained superior electrical characteristics of trench gate field stop IGBT than conventional IGBT. To begin with, the breakdown voltage characteristic was showed 1,460 V and on state voltage drop was showed 0.7 V. We obtained 3.5 V threshold voltage, too. To use these results, we have extracted optimal design and process parameter and designed trench gate field stop IGBT. The designed trench gate IGBT will use to inverter of renewable energy and automotive industry.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.26 no.4
• /
• pp.257-263
• /
• 2013

In this paper, Solar, Wind, fuel cell used in a Power conversion devices and industrial inverter motor to increase the efficiency of energy consumption, which is a core part of high-efficiency, high-voltage Trench Gate Field Stop IGBT was studied. For this purpose Planar type NPT IGBT and Planar type Field Stop IGBT have designed a basic structure designed to Trench Gate Field Stop IGBT based on the completed structure by analyzing the energy consumption of electrical characteristics, efficiency is a key part, high-efficiency and high-voltage inverter for industry regarding the optimization design for Trench Gate Field Stop IGBT.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2006.11a
• /
• pp.63-64
• /
• 2006

Here we present detailed simulation results of trench field stop IGBTs. Besides the reduced on-state voltage drop there is also an Increase of forward blocking voltage. A trench gate IGBT has low on-state voltage drop mainly due to the removal of the JFET region and a field stop IGBT has high forward blocking voltages due to the trapezoidal field distribution under blocking condition. We have simulated the static characteristics of TIGBT with field stop technology by 2D simulator(MEDICI). The simulated result of forward blocking voltage and on-state voltage drop is about 1,408V and 1.3V respectively at $110{\mu}m$ N-drift thickness.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.25 no.4
• /
• pp.261-265
• /
• 2012

IGBT(insulated gate bipolar transistor) is outstanding device for current conduction capabilities. IGBT design to control the large power switching device for power supply, converter, solar converter, electric home appliances, etc. like this IGBT device can be used in many places so to increase the efficiency of the various structures are coming. in this paper optimization design of planar type IGBT and planar field stop IGBT, and both devices have a comparative analysis and reflection of the electrical characteristics.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.25 no.4
• /
• pp.253-260
• /
• 2012

IGBT (insulated gate bipolar transistor) have received wide attention because of their high current conduction and good switching characteristics. To reduce the power loss of IGBT, the on state voltage drop should be lowered and the switching time should be shorted. However, there is Trade-off between the breakdown voltage and the on state voltage drop. To achieving good electrical characteristics, field stop IGBT (FS IGBT) is proposed. In this paper, 1,200 V planar gate non punch-through IGBT (planar gate NPT IGBT), planar gate FS IGBT and trench gate FS IGBT is designed and optimized. The simulation results are compared with each three structures. In results, we optain optimal design parameters and confirm excellence of trench gate FS IGBT. Experimental result by using medici, shows 40% improvement of on state voltage drop.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.30 no.4
• /
• pp.214-217
• /
• 2017

An IGBT (insulated gate bipolar transistor) device has an excellent current-conducting capability. It has been widely employed as a switching device to use in power supplies, converters, solar inverters, and household appliances or the like, designed to handle high power. The aim with IGBT is to meet the requirements for use in ideal power semiconductor devices with a high breakdown voltage, an on-state voltage drop, a high switching speed, and high reliability for power-device applications. In general, the concentration of the drift region decreases when the breakdown voltage increases, but the on-resistance and other characteristics should be reduced to improve the breakdown voltage and on-state voltage drop characteristics by optimizing the design and structure changes. In this paper, using the T-CAD, we designed the NPT-IGBT (non punch-through IGBT) and FS-IGBT (field stop IGBT) and analyzed the electrical characteristics of those devices. Our analysis of the electrical characteristics showed that the FS-IGBT was superior to the NPT-IGBT in terms of the on-state voltage drop.

• The KSFM Journal of Fluid Machinery
• /
• v.15 no.6
• /
• pp.70-76
• /
• 2012

Recently, because people are taking a great interest in the water supply system and the related facilities are getting larger, the surge suppression is very important problem. The waterhammer occurs when the pumps are started or stoped for operation or tripped due to the power failure. As the waterhammer problems as a result of the pump power failure were very serious, these situations were carefully investigated. Accordingly, we carried out both numerical simulations and field tests to confirm the safety of Juam intake pumping station in which had the in-line pumps. In this paper, it was reviewed that the water supply system has the reliability on the pressure surge, in case the air chambers were installed at both the inlet and the oulet of the in-line pumping station. From the numerical simulations, we found that negative pressure occurred at the inlet disappeared and high pressure occurred at the outlet reduced due to the air chambers. And these results of numerical simulations verified by the field tests. The field tests carried out in case of normal start, normal stop, one and two of pumps emergency stop. By results of simulations and field tests, we are sure that Juam intake pumping station in which have the air chambers is safe for the waterhammer. In addition, we suggested the operation methods of facilities for safe maintenance of the pumping station.

• Korean Journal of Optics and Photonics
• /
• v.31 no.1
• /
• pp.20-25
• /
• 2020

To design a wide-field two-mirror system, the system must feature an off-axial field, to avoid ray obstruction and field screening by the secondary mirror. The off-axial aberrations of the system cannot be corrected sufficiently, though, because there are only a few design parameters. The present study designs an improved off-axial-field two-mirror system using a decentered aperture stop.

• Journal of Korean Society of Transportation
• /
• v.6 no.2
• /
• pp.49-56
• /
• 1988

Alternate use of lane at a signalized intersection is a quite different control of the operation of an intersection. This control introduces a new stop line and signal before the original stop line. All of the lanes between the two stop lines are used for left turn traffic or through traffic at a time. The purpose of the control is increasing the capacity of a n intersection without widening the approach width. this paper contains a study on the condition of a application, the proper distances between the two stop lines, the reasonable offsets(rear) to guarantee clearing the vehicles of previous phase, the comparison of approach capacity between the existing control and this control. The study results reveals that the offsets(rear) are rather stable showing the range(maximum value minus minimum value) of it's value does not exceed 3.6 seconds according to the field data. The approach capacity will be increased by 27%, 43%, 59%, 84% when the distances between the stop lines are 30.0m respectively. The control might have theoretical limitation to operate in practice. So an experimental application of the control at some suitable intersections prior to expanding it.