[KSCI] Korea Science Citation Index Service

http://dx.doi.org/10.4313/TEEM.2016.17.1.50

Performance of Non Punch-Through Trench Gate Field-Stop IGBT for Power Control System and Automotive Application

Kang, Ey Goo (Department of Energy Semiconductor Engineering, Far East University)

Publication Information

Transactions on Electrical and Electronic Materials / v.17, no.1, 2016 , pp. 50-55 More about this Journal

Abstract

In this paper, we have analyzed the electrical characteristics of 1200V trench gate field stop IGBT and have compared to NPT planar type IGBT and NPT planar field stop IGBT. As a result of analyzing, we obtained superior electrical characteristics of trench gate field stop IGBT than conventional IGBT. To begin with, the breakdown voltage characteristic was showed 1,460 V and on state voltage drop was showed 0.7 V. We obtained 3.5 V threshold voltage, too. To use these results, we have extracted optimal design and process parameter and designed trench gate field stop IGBT. The designed trench gate IGBT will use to inverter of renewable energy and automotive industry.

Keywords

IGBT; Trench; Planar; Field-stop; NPT; Power Devices; High Efficiency; High Breakdown Voltage; On-state Voltage drop;

Citations & Related Records

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