Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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A Study on the Electrical Characteristics with Design Parameters in 1,200 V Trench Gate Field Stop IGBT

1,200 V급 Trench Gate Field Stop IGBT 소자의 전기적 특성 향상 방안에 관한 연구

  • Geum, Jong-Min (Department of Electrical Engineering, Korea University) ;
  • Jung, Eun-Sik (Department of Electrical Engineering, Korea University) ;
  • Kang, Ey-Goo (Department of Photovoltaic Engineering, Far East University) ;
  • Sung, Man-Young (Department of Electrical Engineering, Korea University)
  • Received : 2012.03.16
  • Accepted : 2012.03.23
  • Published : 2012.04.01
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Abstract

IGBT (insulated gate bipolar transistor) have received wide attention because of their high current conduction and good switching characteristics. To reduce the power loss of IGBT, the on state voltage drop should be lowered and the switching time should be shorted. However, there is Trade-off between the breakdown voltage and the on state voltage drop. To achieving good electrical characteristics, field stop IGBT (FS IGBT) is proposed. In this paper, 1,200 V planar gate non punch-through IGBT (planar gate NPT IGBT), planar gate FS IGBT and trench gate FS IGBT is designed and optimized. The simulation results are compared with each three structures. In results, we optain optimal design parameters and confirm excellence of trench gate FS IGBT. Experimental result by using medici, shows 40% improvement of on state voltage drop.

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References

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