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http://dx.doi.org/10.4313/JKEM.2012.25.4.253

A Study on the Electrical Characteristics with Design Parameters in 1,200 V Trench Gate Field Stop IGBT  

Geum, Jong-Min (Department of Electrical Engineering, Korea University)
Jung, Eun-Sik (Department of Electrical Engineering, Korea University)
Kang, Ey-Goo (Department of Photovoltaic Engineering, Far East University)
Sung, Man-Young (Department of Electrical Engineering, Korea University)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.25, no.4, 2012 , pp. 253-260 More about this Journal
Abstract
IGBT (insulated gate bipolar transistor) have received wide attention because of their high current conduction and good switching characteristics. To reduce the power loss of IGBT, the on state voltage drop should be lowered and the switching time should be shorted. However, there is Trade-off between the breakdown voltage and the on state voltage drop. To achieving good electrical characteristics, field stop IGBT (FS IGBT) is proposed. In this paper, 1,200 V planar gate non punch-through IGBT (planar gate NPT IGBT), planar gate FS IGBT and trench gate FS IGBT is designed and optimized. The simulation results are compared with each three structures. In results, we optain optimal design parameters and confirm excellence of trench gate FS IGBT. Experimental result by using medici, shows 40% improvement of on state voltage drop.
Keywords
Insulated gate bipolar transistor; Field stop IGBT; Trench gate; On state voltage drop;
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  • Reference
1 Y. I. Choi, Trans. KIEE, 46, 13 (1997).
2 B. J. Baliga, Fundamentals of Power Semiconductor Devices (Springer, USA, 2008)
3 B. J. Baliga, Power Semiconductor Devices (PWS Publishing Company, Boston, 1996)
4 H. Ruthing, F. umbach, O. Hellmunf, P. Kanschat, and G. Schmidt, IEE Proc.-Circuits Devices Syst., 15 (2004).
5 E. G. Kang and M. Y. Sung, J. KIEEME, 15, 758 (2002).
6 X. Kang, A. Caiafa, E. Santi, J. L. Hudgins, and P. R. Palmer, IEEE Trans. Ind. Appl., 39, 922 (2003).   DOI   ScienceOn