Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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A Study on Electrical Characteristics Improvement on Field Stop IGBT Using Trench Gate Structure

Trench Gate를 이용한 Field Stop IGBT의 전기적 특성 분석에 관한 연구

  • Nam, Tae-Jin (Department of Photovoltaic Engineering, Far East University) ;
  • Jung, Eun-Sik (Maple Semiconductor, Incorporated) ;
  • Chung, Hun-Suk (Department of Photovoltaic Engineering, Far East University) ;
  • Kang, Ey-Goo (Department of Photovoltaic Engineering, Far East University)
  • Received : 2012.03.20
  • Accepted : 2012.03.24
  • Published : 2012.04.01
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Abstract

The most recently IGBT (insulated gate bipolar mode transistor) devices are in the most current conduction capable devices and designed to the big switching power device. Use this number of the devices are need to high voltage and low on-state voltage drop. And then in this paper design of field stop IGBT is insert N buffer layer structure in NPT planar IGBT and optimization design of field stop IGBT and trench field stop IGBT, both devices have a comparative analysis and reflection of the electrical characteristics. As a simulation result, trench field stop IGBT is electrical characteristics better than field stop IGBT.

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References

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