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http://dx.doi.org/10.4313/JKEM.2012.25.4.261

A Study on Optimal Design and Electrical Characteristics of 600 V Planar Field Stop IGBT  

Nam, Tae-Jin (Department of Photovoltaic Engineering, Far East University)
Jung, Eun-Sik (Maple Semiconductor, Incorporated)
Kang, Ey-Goo (Department of Photovoltaic Engineering, Far East University)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.25, no.4, 2012 , pp. 261-265 More about this Journal
Abstract
IGBT(insulated gate bipolar transistor) is outstanding device for current conduction capabilities. IGBT design to control the large power switching device for power supply, converter, solar converter, electric home appliances, etc. like this IGBT device can be used in many places so to increase the efficiency of the various structures are coming. in this paper optimization design of planar type IGBT and planar field stop IGBT, and both devices have a comparative analysis and reflection of the electrical characteristics.
Keywords
Field stop; IGBT; Non-punch through; Power device;
Citations & Related Records
Times Cited By KSCI : 1  (Citation Analysis)
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