• Journal of the Institute of Electronics Engineers of Korea SD
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• v.38 no.3
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• pp.211-219
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• 2001

This paper describes a read-only CMOS transponder IC for RFID applications. A full-wave rectifier implemented using NMOS transistors supplies the transponder with a dc supply voltage using the magnetic field generated from a reader. A 64-bit ROM has been designed for a data memory. Front-end impedance modulation and Manchester coding are used for transmitting the data from the transponder memory to the reader. A new damping circuit which has almost constant damping rate under the variations of the distance between the transponder and the reader has been employed for impedance modulation. The designed circuit has been fabricated using a 0.65${\mu}{\textrm}{m}$2-poly, 2-metal CMOS process. Die area is 0.9mm$\times$0.4mm. Measurement results show that it has a constant damping rate of around 20~25% and a data transmission rate of 3.9kbps at a 125KHz RF carrier. The power required for reading operation is about 100㎼. The measured reading distance is around 7cm.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.8
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• pp.22-29
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• 2007

A 2.5Gb/s 2:1 multiplexer(MUX) IC using $0.18{\mu}m$ CMOS was designed and fabricated. Inductive peaking technology was used to improve the performance. On-chip micro spiral inductor was designed to maximize the inductive peaking effect without increasing the chip area much. The designed 4.7 nH micro-spiral inductor was $20\times20{\mu}m2$ in size. 2:1 MUX with and without micro spiral inductors were compared. The rise and fall time was improved more than 23% and 3% respectively using the micro spiral inductors for 1.25Gb/s signal. For 2.5 Gb/s signal, fall and rise time was improved 5.3% and 3.5% respectively. It consumed 61mW and voltage output swing was 1$180mV_{p-p}$ at 2.5Gb/s.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.38 no.3
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• pp.198-204
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• 2001

In this paper, a 3V 8-bit 200MSPS CMOS folding / interpolation A/D Converter is proposed. It employs an efficient architecture whose FR(Folding Rate) is 8, NFB(Number of Folding Block) is 4, and IR (Interpolating Rate) is 8. For the purpose of improved SNDR by to be low input frequency, distributed track and hold circuits are included. In order to obtain a high speed and low power operation, further, a novel dynamic latch and digital encoder based on a novel delay error correction are proposed. The chip has been fabricated with a 0.35${\mu}{\textrm}{m}$ 2-poly 3-metal n-well CMOS technology. The effective chip area is 1070${\mu}{\textrm}{m}$$\times$650${\mu}{\textrm}{m}$ and it dissipates about 230mW at 3.3V power supply. The INL is within $\pm$1LSB and DNL is within $\pm$1LSB, respectively. The SNDR is about 43㏈, when the input frequency is 10MHz at 200MHz clock frequency.

• Journal of Ocean Engineering and Technology
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• v.20 no.6 s.73
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• pp.88-92
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• 2006

Large-scale model tests of welded topside joints were carried out to observe the fatigue behavior of API 2W Gr.50 steel produced by POSCO. The fatigue crack behaviors for various loading conditions were measured and investigated around the critical joint sections. The experimental results have been verified with numerical approaches and also compared with the AWS D1.1 and DnV RP-C203 design curves. The large-scale experiment models were fabricated, based on the actual operating east area fixed platform. The dimensions of the models were slightly modified to accommodate the test facilities and capacities. The fatigue test was carried out having ${\Delta}Q$ of T1=705.6kN, T2=749.7kN and T3=793.8kN. The three specimens were statically loaded 20 times, with various loadings of about 50kN intervalsbetween the maximum and minimum loads required in the fatigue tests. This loading removed the residual stress in the specimen before the fatigue tests. The topside joint crack was initiated from the brace heel, where the maximum tensile stress occurred. The API 2W Gr.50 steel satisfied the AWS D1.1 detail category C and DnV RP-C203 detail category F ${\Delta}S-N$ curve.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.48 no.4
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• pp.14-23
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• 2011

In this paper, a 7-bit 2GSPS folding/interpolation A/D Converter(ADC) with a Self-Calibrated Vector Generator is proposed. The ADC structure is based on a folding/interpolation architecture whose folding/interpolation rate is 4 and 8, respectively. A cascaded preprocessing block is not only used in order to drive the high input signal frequency, but the resistive interpolation is also used to reduce the power consumption. Based on a novel self-calibrated vector generator, further, offset errors due to device mismatch, parasitic resistors. and parasitic capacitance can be reduced. The chip has been fabricated with a 1.2V 0.13um 1-poly 7-metal CMOS technology. The effective chip area including the calibration circuit is 2.5$mm^2$. SNDR is about 39.49dB when the input frequency is 9MHz at 2GHz sampling frequency. The SNDR is improved by 3dB with the calibration circuit.

• Journal of IKEEE
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• v.2 no.2 s.3
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• pp.309-315
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• 1998

This paper describes an 8b 52 MHz CMOS subranging analog-to-digital converter (ADC) for Integrated Services Digital Network (ISDN) applications. The proposed ADC based on the improved time-interleaved architecture removes the holding time which is typically observed in the conventional double-channel subranging ADCs to increase throughput rate. Moreover, the ADC employs the interpolation technique in the back-end subranging ADCs far residue signal processing to minimize die area and power consumption. The fabricated and measured prototype ADC in a 0.8 um n-well double-poly double-metal CMOS process typically shows a 52 MHz sampling rate at a 5 V supply voltage with 230 mW, and a 40 MHz sampling rate at a 3 V power supply with 60 mW power consumption.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.26 no.9
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• pp.814-820
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• 2015

In this paper, A high selective dual-band bandpass filter was proposed using a dual-mode ring resonator with two short-circuited stubs. For dual-mode resonance, the ring resonator is directly connected with non-orthogonal feed-lines via coupling capacitors. Two short-circuited stubs which are unequal lengths are simultaneously placed at two corners along the two symmetry plane of the ring resonator in order to obtain dual-band responses. Because the feeding angle perturbated ring resonator of the proposed dual-band bandpass filter has the symmetrical structure, Even/Odd mode analysis can be well applied to extract the scattering parameters and transmission zero frequencies. The proposed dual-band bandpass filter was designed and fabricated for WLAN(Wireless Local Area Network) application of IEEE 802.11n standard. The measured results showed a good agreement with the simulation results, and it should be well applied not only for WLAN applications but also for any other communication systems.

• Journal of the Institute of Electronics and Information Engineers
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• v.50 no.10
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• pp.91-97
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• 2013

In this paper, a current steering 10-bit CMOS D/A converter to drive a NTSC/PAL analog TV is proposed. The proposed D/A converter has a 50MS/s operating speed with a 6+4 segmented type. Further, in order to minimize the device mismatch, a self-calibration bias technique with a fully integrated termination resistance is discussed. The chip has been fabricated with a 3.3V 0.11um 1-poly 6-metal CMOS technology. The effective chip area is $0.35mm^2$ and power consumption is about 88mW. The experimental result of SFDR is 63.1dB, when the input frequency is 1MHz at the 50MHz of sampling frequency.

• Journal of IKEEE
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• v.6 no.1 s.10
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• pp.40-46
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• 2002

In this paper, a microstrip array antenna is designed, fabricated and measured for ETCS(Electronic Toll Collection System). To reduce effect of external propagation environment, we use edge-cuffed element and to obtain wider axial ratio and increased bandwidth, we use the sequential rotation array method. Also to fulfill ETCS, roadside equipment are designed to be provide a radiation pattern which can accurately pinpoint the designated communication area without interference of another lanes. And we make and apply an absorber to the array antenna to reduce SLL(Side Lobe Level). From the measurement, we get that return-loss at center frequency is -20.675dB, axial ratio is 0.35dB and the gain is 20.26dBi. And we found that SLL is reduced.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.48 no.7
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• pp.76-81
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• 2011

A new via cutting structure in 2-layer DRAM package substrate has been fabricated to lower its power distribution network(PDN) impedance. In new structure, part of the via is cut off vertically and its remaining part is designed to connect directly with the bonding pad on the package substrate. These via structure and substrate design not only provide high routing density but also improve the PDN impedance by shortening effectively the path from bonding pad to VSSQ plane. An additional process is not necessary to fabricate the via cutting structure because its structure is completed at the same time during a process of window area formation. Also, burr occurrence is minimized by filling the via-hole inside with a solder resist. 3-dimensional electromagnetic field simulation and S-parameter measurement are carried out in order to validate the effects of via cutting structure and VDDQ/VSSQ placement on the PDN impedance. New DRAM package substrate has a superior PDN impedance with a wide frequency range. This result shows that via cutting structure and power/ground placement are effective in reducing the PDN impedance.