• Title/Summary/Keyword: Electrostatic current

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High Resistivity Characteristics of the Sinter Dust Generated from the Steel Plant

  • Lee, Jae-Keun;Hyun, Ok-Chun;Lee, Jung-Eun;Park, Sang-Deok
    • Journal of Mechanical Science and Technology
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    • v.15 no.5
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    • pp.630-638
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    • 2001
  • The electrical resistivity of sinter dusts generated from the steel industry and coal fly ash from the coal power plant has been investigated using the high voltage conductivity cell based on JIS B 9915 as a function of temperature and water content. Dust characterization such as the chemical composition, size distribution, atomic concentration, and surface structure has been conducted. Major constituents of sinter dusts were Fe$_2$O$_3$(40∼74.5%), CaO (6.4∼8.2%), SiO$_2$(4.1∼6.0%), and unburned carbon (7.0∼14.7%), while the coal fly ash consisted of mainly SiO$_2$(51.4%), Al$_2$O$_3$(24.1%), and Fe$_2$O$_3$(10.5%). Size distributions of the sinter dusts were bi-modal in shape and the mass median diameters (MMD) were in the range of 24.7∼137㎛, whereas the coal fly ash also displayed bi-modal distribution and the MMD of the coal fly ash was 35.71㎛. Factors affecting resistivity of dusts were chemical composition, moisture content, particle size, gas temperature, and surface structure of dust. The resistivity of sinter dusts was so high as 10(sup)15 ohm$.$cm at 150$\^{C}$ that sinter dust would not precipitate well. The resistivity of the coal fly ash was measured 1012 ohm$.$cm at about 150$\^{C}$. Increased water contents of the ambient air lowered the dust resistivity because current conduction was more activated for absorption of water vapor on the surface layer of the dust.

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Multi-channel LD - Driver designed for CTP(computer to plate) (CTP용 다 채널 LD - 드라이버 설계)

  • Lee, Bae-Kyu
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.19 no.3
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    • pp.667-673
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    • 2015
  • A laser diode(LD) has been studied in many fields what medical, industrial processing, sensor, advertising equipment, printing equipment. And the LD is being used in industry. However, LD will require precision handling. Therefore, the actual use of LD is limited to areas of specialization. In this study, attend to the characteristics of the LD what weak to electrostatic and physical impact, current and heat. And will make a sample module that use comfortably a various wavelength LD. Furthermore, Furthermore, through the printing CTP(Computer to Plate) equipment used the 128-channel LD-Driver, compares it with a 64-channel CTP device about the print speed and resolution. And will solved the problem of delay between the dot and the dot. Finally, consider the potential of the 256-channel LD-Driver.

Beyond-CMOS: Impact of Side-Recess Spacing on the Logic Performance of 50 nm $In_{0.7}Ga_{0.3}As$ HEMTs

  • Kim, Dae-Hyun;del Alamo, Jesus A.;Lee, Jae-Hak;Seo, Kwang-Seok
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.6 no.3
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    • pp.146-153
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    • 2006
  • We have been investigating InGaAs HEMTs as a future high-speed and low-power logic technology for beyond CMOS applications. In this work, we have experimentally studied the role of the side-recess spacing $(L_{side})$ on the logic performance of 50 nm $In_{0.7}Ga_{0.3}As$ As HEMTs. We have found that $L_{side}$ has a large influence on the electrostatic integrity (or short channel effects), gate leakage current, gate-drain capacitance, and source and drain resistance of the device. For our device design, an optimum value of $L_{side}$ of 150 nm is found. 50 nm $In_{0.7}Ga_{0.3}As$ HEMTs with this value of $L_{side}$ exhibit $I_{ON}/I_{OFF}$ ratios in excess of $10^4$, subthreshold slopes smaller than 90 mV/dec, and logic gate delays of about 1.3 ps at a $V_{CC}$ of 0.5 V. In spite of the fact that these devices are not optimized for logic, these values are comparable to state-of-the-art MOSFETs with similar gate lengths. Our work confirms that in the landscape of alternatives for beyond CMOS technologies, InAs-rich InGaAs FETs hold considerable promise.

Force Field Parameters for 3-Nitrotyrosine and 6-Nitrotryptophan

  • Myung, Yoo-Chan;Han, Sang-Hwa
    • Bulletin of the Korean Chemical Society
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    • v.31 no.9
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    • pp.2581-2587
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    • 2010
  • Nitration of tyrosine and tryptophan residues is common in cells under nitrative stress. However, physiological consequences of protein nitration are not well characterized on a molecular level due to limited availability of the 3D structures of nitrated proteins. Molecular dynamics (MD) simulation can be an alternative tool to probe the structural perturbations induced by nitration. In this study we developed molecular mechanics parameters for 3-nitrotyrosine (NIY) and 6-nitrotryptophan (NIW) that are compatible with the AMBER-99 force field. Partial atomic charges were derived by using a multi-conformational restrained electrostatic potential (RESP) methodology that included the geometry optimized structures of both $\alpha$- and $\beta$-conformers of a capped tripeptide ACE-NIY-NME or ACE-NIW-NME. Force constants for bonds and angles were adopted from the generalized AMBER force field. Torsional force constants for the proper dihedral C-C-N-O and improper dihedral C-O-N-O of the nitro group in NIY were determined by fitting the torsional energy profiles obtained from quantum mechanical (QM) geometry optimization with those from molecular mechanical (MM) energy minimization. Force field parameters obtained for NIY were transferable to NIW so that they reproduced the QM torsional energy profiles of ACE-NIW-NME accurately. Moreover, the QM optimized structures of the tripeptides containing NIY and NIW were almost identical to the corresponding structures obtained from MM energy minimization, attesting the validity of the current parameter set. Molecular dynamics simulations of thioredoxin nitrated at the single tyrosine and tryptophan yielded well-behaved trajectories suggesting that the parameters are suitable for molecular dynamics simulations of a nitrated protein.

Adsorption of Organic Compounds onto Mineral Substrate Prepared from Oyster Shell Waste

  • Jeon, Young-Woong;Jo, Myung-Chan;Noh, Byeong-Il;Shin, Choon-Hwan
    • Environmental Sciences Bulletin of The Korean Environmental Sciences Society
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    • v.10 no.S_2
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    • pp.79-88
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    • 2001
  • Humic acids react with chlorine to produce Trihalomethanes(THMs), known as carcinogens, during disinfection, the last stage in water purification. Currently, the removal of organic humic acids is considered the best approach to solve the problem of THM formation. Accordingly, the current study examined the adsorption of organic compounds of humic acids onto an inorganic carrier prepared from oyster shell waste. The adsorbent used was activated oyster shell powder(HAP) and silver ion-exchanged oyster shell powder(HAP-Ag), with CaCO$_3$ as the control. The adsorbates were phthalic acid, chelidamic acid, catechol, dodecylpyridinium chloride(DP), and 2-ethyl phenol(2-EP). The adsorption experiments were carried out in a batch shaker at $25^{\circ}C$ for 15 hours. The equilibrium concentration of the adsorbate solution was analyzed using a UV spectrophotometer and the data fitted to the Langmuir isotherm model. Since the solution pH values were found to be greater than the pKa values of the organic compounds used as adsorbates, the compounds apparently existed in ionic form. The adsorptive affinities of the organic acid and phenolic compounds varied depending on the interaction of electrostatic forces, ion exchange, and chelation. More carboxylic acids and catechol, rather than DP and 2-EP, were adsorbed onto HAP and HAP-Ag. HAP and HAP-Ag exhibited a greater adsorptive affinity for the organic compounds than CaCO$_3$, used as the control.

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Discharge Characteristics of Large-Area High-Power RF Ion Source for Neutral Beam Injector on Fusion Devices

  • Chang, Doo-Hee;Park, Min;Jeong, Seung Ho;Kim, Tae-Seong;Lee, Kwang Won;In, Sang Ryul
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.241.1-241.1
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    • 2014
  • The large-area high-power radio-frequency (RF) driven ion sources based on the negative hydrogen (deuterium) ion beam extraction are the major components of neutral beam injection (NBI) systems in future large-scale fusion devices such as an ITER and DEMO. Positive hydrogen (deuterium) RF ion sources were the major components of the second NBI system on ASDEX-U tokamak. A test large-area high-power RF ion source (LAHP-RaFIS) has been developed for steady-state operation at the Korea Atomic Energy Research Institute (KAERI) to extract the positive ions, which can be used for the NBI heating and current drive systems in the present fusion devices, and to extract the negative ions for negative ion-based plasma heating and for future fusion devices such as a Fusion Neutron Source and Korea-DEMO. The test RF ion source consists of a driver region, including a helical antenna and a discharge chamber, and an expansion region. RF power can be transferred at up to 10 kW with a fixed frequency of 2 MHz through an optimized RF matching system. An actively water-cooled Faraday shield is located inside the driver region of the ion source for the stable and steady-state operations of RF discharge. The characteristics and uniformities of the plasma parameter in the RF ion source were measured at the lowest area of the expansion bucket using two RF-compensated electrostatic probes along the direction of the short- and long-dimensions of the expansion region. The plasma parameters in the expansion region were characterized by the variation of loaded RF power (voltage) and filling gas pressure.

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Dual Stage Actuator System for High Density Magnetic Disk Drives Using a Rotary-type Electrostatic Microatuator (회전구동 정전형 마이크로 액추에이터를 이용한 고트랙밀도 HDD용 이단 구동 시스템)

  • Jung Sunghwan;Choi Jae-Joon;Park Jihwang;Lee Chang-Ho;Kim Cheol-Soon;Min Dong-Ki;Kim Young-Hoon;Lee Seung-Hi;Jeon Jong Up
    • Journal of the Korean Society for Precision Engineering
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    • v.22 no.10 s.175
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    • pp.174-185
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    • 2005
  • This paper presents the design, fabrication, and testing results of a dual stage actuator system for a fine positioning of magnetic heads in magnetic disk drives. A novel rotary microactuator which is electrostatically driven and utilized as a secondary actuator was designed. The stator and rotor electrodes in the microactuator was revised to have the optimal shapes and hence produces much higher rotational torque compared with the conventional comb-shape electrodes. The microactuators were successfully fabricated using SoG(silicon on glass) processing technology, which is known as being cost-effective. The fabricated microactuator has the structural thickness of $45{\mu}m$ with the gap width of approximately $3{\mu}m$. The dynamic characteristic of microactuator/slider assembly was investigated, and its natural frequency and DC gain were measured to be 3.4kHz and 32nm/V, respectively. The microactuator/slider assembly was integrated into a HDD model V10 of Samsung Electronics Co. and a dual servo algorithm was tested to explore the tracking performance of dual stage actuator system where the LDV signals instead of magnetic head signals were used. Experimental results indicate that this system achieves the tracking accuracy of 30nm. This value corresponds to a track density of 85,000 track per inch(TPI), which is about 3 times greater than that of current hard disk drives.

Development of RF Ion Source for Neutral Beam Injector in Fusion Devices

  • Jang, Du-Hui;Park, Min;Kim, Seon-Ho;Jeong, Seung-Ho
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.02a
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    • pp.550-551
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    • 2013
  • Large-area RF-driven ion source is being developed at Germany for the heating and current drive of ITER plasmas. Negative hydrogen (deuterium) ion sources are major components of neutral beam injection systems in future large-scale fusion experiments such as ITER and DEMO. RF ion sources for the production of positive hydrogen ions have been successfully developed at IPP (Max-Planck- Institute for Plasma Physics, Garching) for ASDEX-U and W7-AS neutral beam injection (NBI) systems. In recent, the first NBI system (NBI-1) has been developed successfully for the KSTAR. The first and second long-pulse ion sources (LPIS-1 and LPIS-2) of NBI-1 system consist of a magnetic bucket plasma generator with multi-pole cusp fields, filament heating structure, and a set of tetrode accelerators with circular apertures. There is a development plan of large-area RF ion source at KAERI to extract the positive ions, which can be used for the second NBI (NBI-2) system of KSTAR, and to extract the negative ions for future fusion devices such as ITER and K-DEMO. The large-area RF ion source consists of a driver region, including a helical antenna (6-turn copper tube with an outer diameter of 6 mm) and a discharge chamber (ceramic and/or quartz tubes with an inner diameter of 200 mm, a height of 150 mm, and a thickness of 8 mm), and an expansion region (magnetic bucket of prototype LPIS in the KAERI). RF power can be transferred up to 10 kW with a fixed frequency of 2 MHz through a matching circuit (auto- and manual-matching apparatus). Argon gas is commonly injected to the initial ignition of RF plasma discharge, and then hydrogen gas instead of argon gas is finally injected for the RF plasma sustainment. The uniformities of plasma density and electron temperature at the lowest area of expansion region (a distance of 300 mm from the driver region) are measured by using two electrostatic probes in the directions of short- and long-dimension of expansion region.

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A Study on ESD Robustness of Output Drivers for ESD Design Window Engineering (ESD 설계 마진을 위한 출력드라이버 ESD 내성 연구)

  • Kim, Jung-Dong;Lee, Gee-Du;Choi, Yoon-Chul;Kwon, Kee-Won;Chun, Jung-Hoon
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.48 no.12
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    • pp.31-36
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    • 2011
  • This paper investigates the ESD robustness of the stacked output driver with a 0.13um CMOS process. To represent an actual I/O system, we implemented stacked output driver circuits with pre-drivers and a rail-based power clamp. We implemented eight kinds of circuits varying pre-driver input connections and stacked driver size. The test circuits are examined with TLP measurements. It is shown that breakdown current and voltage can be increased by connecting the pre-driver input to a power supply and using stacked devices of a similar size. Based on the test results, design guideline is suggested to improve ESD robustness of the stacked output drivers.

ESD Failure Analysis of PMOS Transistors (PMOS 트랜지스터의 ESD 손상 분석)

  • Lee, Kyoung-Su;Jung, Go-Eun;Kwon, Kee-Won;Chun, Jung-Hoon
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.47 no.2
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    • pp.40-50
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    • 2010
  • The studies of PMOS transistors in CMOS technologies are reviewed- focusing on the snapback and breakdown behavior of the parasitic PNP BJTs in high current regime. A new failure mechanism of PMOSFET devices under ESD conditions is also analyzed by investigating various I/O structures in a $0.13\;{\mu}m$ CMOS technology. Localized turn-on of the parasitic PNP transistor can be caused by localized charge injection from the adjacent diodes into the body of the PMOSFET, significantly degrading the ESD robustness of PMOSFETs. Based on 2-D device simulations the critical layout parameters affecting this problem are identified. Design guidelines for avoiding this new PMOSFET failure mode are also suggested.