• Journal of Power Electronics
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• v.10 no.4
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• pp.335-341
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• 2010

In this paper, an interleaved soft switching boost converter for a Photovoltaic Power Conditioning System (PV-PCS) with high efficiency is proposed. In order to raise the efficiency of the proposed converter, a 2-phase interleaved boost converter integrated with soft switching cells is used. All of the switching devices in the proposed converter achieve zero current switching (ZCS) or zero voltage switching (ZVS). Thus, the proposed circuit has a high efficiency characteristic due to low switching losses. To analyze the power losses of the proposed converter, two experimental sets have been built. One consists of normal devices (MOSFETs, Fast Recovery (FR) diodes) and the other consists of advanced power devices (CoolMOSs, SiC-Schottky Barrier Diodes (SBDs)). To verify the validity of the proposed topology, theoretical analysis and experimental results are presented.

• ETRI Journal
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• v.43 no.5
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• pp.787-798
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• 2021

This paper applies learning automata to improve the performance of a Q-learning based random access channel (QL-RACH) scheme in a cellular machine-to-machine (M2M) communication system. A prioritized learning automata QL-RACH (PLA-QL-RACH) access scheme is proposed. The scheme employs a prioritized learning automata technique to improve the throughput performance by minimizing the level of interaction and collision of M2M devices with human-to-human devices sharing the RACH of a cellular system. In addition, this scheme eliminates the excessive punishment suffered by the M2M devices by controlling the administration of a penalty. Simulation results show that the proposed PLA-QL-RACH scheme improves the RACH throughput by approximately 82% and reduces access delay by 79% with faster learning convergence when compared with QL-RACH.

• Journal of the Semiconductor & Display Technology
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• v.17 no.4
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• pp.6-10
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• 2018

Organic light emitting devices have attracted the attention of many people because of their high potential for self-emission and flexible display devices. However, due to limitations in device efficiency and lifetime, partial commercialization is underway. In this paper, we have investigated the electrical conduction mechanism of the organic light emitting device by the temperature and the thickness of the light emitting layer through the current - voltage characteristics with respect to the conduction mechanism directly affecting the efficiency and lifetime of the organic light emitting device. Through the study, it was found that the conduction in the low electric field region is caused by the movement of the heat excited charge in the ohmic region and the tunneling of the electric charge due to the high electric field in the high electric field region.

• Journal of Sensor Science and Technology
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• v.31 no.5
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• pp.293-300
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• 2022

Flexible, wearable, and implantable electronic sensors have started to gain popularity in improving the quality of life of sick and healthy people, shifting the future paradigm with high sensitivity. However, conventional technologies with a limited lifespan occasionally limit their continued usage, resulting in a high cost. In addition, traditional battery technologies with a short lifespan frequently limit operation, resulting in a substantial challenge to their growth. Subsequently, utilizing human biomechanical energy is extensively preferred motion for biologically integrated, self-powered, functioning devices. Ideally suited for this purpose are piezoelectric energy harvesters. To convert mechanical energy into electrical energy, devices must be mechanically flexible and stretchable to implant or attach to the highly deformable tissues of the body. A systematic analysis of piezoelectric nanogenerators (PENGs) for personalized healthcare is provided in this article. This article briefly overviews PENGs as self-powered sensor devices for energy harvesting, sensing, physiological motion, and healthcare.

• Journal of the Semiconductor & Display Technology
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• v.22 no.4
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• pp.38-47
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• 2023

Three dimensional (3D) packaging is a next-generation packaging technology that vertically stacks chips such as memory devices. The necessity of 3D packaging is driven by the increasing demand for smaller, high-performance electronic devices (HPC, AI, HBM). Also, it facilitates innovative applications across another fields. With growing demand for high-performance devices, companies of semiconductor fields are trying advanced packaging techniques, including 2.5D and 3D packaging, MR-MUF, and hybrid bonding. These techniques are essential for achieving higher chip integration, but challenges in mass production and fine-pitch bump connectivity persist. Advanced bonding technologies are important for advancing the semiconductor industry. In this review, it was described 3D packaging technologies for chip integration including mass reflow, thermal compression bonding, laser assisted bonding, hybrid bonding.

• JSTS:Journal of Semiconductor Technology and Science
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• v.16 no.2
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• pp.153-158
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• 2016

The elastic material constants, stiffness constants ($c_{11}$, $c_{12}$, and $c_{44}$), are three unique coefficients that establish the relation between stress and strain. Accurate knowledge of mechanical properties and the stiffness coefficients for silicon is required for design of Micro-Electro-Mechanical Systems (MEMS) devices for proper modeling of stress and strain in electronic packaging. In this work, the stiffness coefficients for silicon as a function of temperature from $-150^{\circ}C$ to $+25^{\circ}C$ have been extracted by using the experimental measurements of Poisson's ratio (${\nu}$) of silicon in several directions.

• JSTS:Journal of Semiconductor Technology and Science
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• v.17 no.3
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• pp.465-472
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• 2017

Security has become one of the most important requirements for various devices for multi-sensor based embedded systems. The AES (Advanced Encryption Standard) algorithm is widely used for security, however, it requires high computing power. In order to reduce the CPU power for the data encryption of images, we propose a new image encryption module using hardware memoization, which can reuse previously generated data. However, as image pixel data are slightly different each other, the reuse rate of the simple memoization system is low. Therefore, we further apply an approximate concept to the memoization system to have a higher reuse rate by sacrificing quality. With the novel technique, the throughput can be highly improved by 23.98% with 14.88% energy savings with image quality loss minimization.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.344.1-344.1
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• 2016

Recently, graphene has shown great characteristic of electrical conductivity, strength, and elasticity. However, due to edge unstable and metallic properties, it is difficult to use as a semiconductor devices. The solution of such problems has been sought a way to use the boron nitride in a stacked layer structure. By graphene and boron nitride stacked layer structure on silicon substrate, the electron mobility is improved and deteriorated results in semiconductor properties. In this study, to make layered structure, we developed direct synthesis method for graphene on boron nitride. By using Raman technique, the directly stacked layer structure is in good agreement with measurements on each of the attributes.

• Journal of Electrical Engineering and Technology
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• v.12 no.1
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• pp.189-197
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• 2017

This paper elaborates two novel proposed topologies (type-I and type-II) of the high step-up DC-DC converter using switched inductor and voltage multiplier cell. The advantages of these proposed topologies are the less voltage stress on semiconductor devices, low device count, high power conversion efficiency, high switch utilization factor and high diode utilization factor. We analyze the Type-II topologies operating principle and mathematical analysis in detail in continuous conduction mode. High-intensity discharge lamp for the automotive application can use the derived topologies. The proposed converters give better performance when compared to the existing types. Also, it is found that the proposed type-II converter has relatively higher voltage gain compared to the type-I converter. A 40 W, 12 V input voltage and 72 V output voltage has developed for the type-II converter and the performances are validated.

• Transactions on Electrical and Electronic Materials
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• v.16 no.6
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• pp.293-302
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• 2015

Degraded data stability, weaker write ability, and increased leakage power consumption are the primary concerns in scaled static random-access memory (SRAM) circuits. Two new SRAM cells are proposed in this paper for achieving enhanced read data stability and lower leakage power consumption in memory circuits. The bitline access transistors are asymmetrically gate-underlapped in the proposed SRAM cells. The strengths of the asymmetric bitline access transistors are weakened during read operations and enhanced during write operations, as the direction of current flow is reversed. With the proposed hybrid asymmetric SRAM cells, the read data stability is enhanced by up to 71.6% and leakage power consumption is suppressed up to 15.5%, while displaying similar write voltage margin and maintaining identical silicon area as compared to the conventional memory cells in a 15 nm FinFET technology.