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http://dx.doi.org/10.5573/JSTS.2016.16.2.153

Characterization of Stiffness Coefficients of Silicon Versus Temperature using "Poisson's Rati" Measurements  

Cho, Chun-Hyung (Department of Electronic & Electrical Engineering, College of Science and Technology, Hongik University)
Cha, Ho-Young (School of Electronic & Electrical Engineering, College of Engineering, Hongik Unversity)
Sung, Hyuk-Kee (School of Electronic & Electrical Engineering, College of Engineering, Hongik Unversity)
Publication Information
JSTS:Journal of Semiconductor Technology and Science / v.16, no.2, 2016 , pp. 153-158 More about this Journal
Abstract
The elastic material constants, stiffness constants ($c_{11}$, $c_{12}$, and $c_{44}$), are three unique coefficients that establish the relation between stress and strain. Accurate knowledge of mechanical properties and the stiffness coefficients for silicon is required for design of Micro-Electro-Mechanical Systems (MEMS) devices for proper modeling of stress and strain in electronic packaging. In this work, the stiffness coefficients for silicon as a function of temperature from $-150^{\circ}C$ to $+25^{\circ}C$ have been extracted by using the experimental measurements of Poisson's ratio (${\nu}$) of silicon in several directions.
Keywords
Stiffness coefficients; compliance coefficients; Poisson's ratio;
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