1 |
S. Yu, Y. Zhao, G. Du, J. Kang, R. Han, and X. Liu, Semiconductor Science and Technology, 24, 025005 (2009). [DOI: http://dx.doi.org/10.1088/0268-1242/24/2/025005]
DOI
|
2 |
Atlas user manual. Devedit user manual. Clever user manual. www.silvaco.com.
|
3 |
S. A. Tawfik, Z. Liu, and V. Kursun, 2007 Independent-gate and tied-gate FinFET SRAM circuits: design guidelines for reduced area and enhanced stability IEEE Int. Conf. Microelectronics, 171 (2007). [DOI: http://dx.doi.org/10.1109/icm.2007.4497686]
|
4 |
S. A. Tawfik and V. Kursun, J. Low Power Electronics, 5, 497 (2009). [DOI: http://dx.doi.org/10.1166/jolpe.2009.1048]
DOI
|
5 |
Process integration, devices, and structures (PIDS-2010). The International Technology Roadmap for Semiconductors (www.itrs.net).
|
6 |
S. A. Tawfik and V. Kursun, Low-power and robust six-FinFET memory cell using selective gate-drain/source overlap engineering IEEE Int. Symp. on Integrated Circuits, 244 (2009).
|
7 |
S. A. Tawfik and V. Kursun, 2008 Work-function engineering for reduced power and higher integration density: an alternative to sizing for stability in FinFET memory circuits IEEE Int. Symp. Circuits and Systems, 788 (2008). [DOI: http://dx.doi.org/10.1109/iscas.2008.4541536]
DOI
|
8 |
J. G. Fossum, M. M. Chowdhury, V. P. Trivedi, T. J. King, and Y. K. Choi, IEEE Int. Electron Devices Meeting, 679 (2003).
|
9 |
S. A. Tawfik and V. Kursun, IEEE T. Electron Devices, 55, 60 (2008). [DOI: http://dx.doi.org/10.1109/TED.2007.911039]
DOI
|
10 |
B. Black, IEEE/ACM Int. Symp. Microarchitecture, 469-479 (2006).
|
11 |
N. Gierczynski, B. Borot, N. Planes, and H. Brut, IEEE Int. Conf. Microelectronic Test Structures, 97 (2007).
|
12 |
B. Na and L. Baitao, Journal of Semiconductors, 33, 065008 (2012).
DOI
|
13 |
D. Qing and L. Yinyin, Journal of Semiconductors, 34, 045008 (2013).
DOI
|
14 |
C. H. Lin, IEEE Int. Symp. VLSI Technology, 15 (2012).
|
15 |
J. Yang, H. R. Harris, M. M. Hussain, B. Sassman, H. Tseng, and R. Jammy, IEEE Symp. VLSI Technology, Systems, and Applications, 20 (2008).
|
16 |
T. Horiuchi, T. Homma, Y. Murao, and K. Okumura, IEEE T. Electron Devices, 41, 186 (1994). [DOI: http://dx.doi.org/10.1109/16.277381]
DOI
|
17 |
D. Kadosh, M. I. Gradner, M. Duane, J. D. Check, F. N. Hause, R. Dawson, and B. T. Moore, Asymmetrical transistor structure US Patent 6104064 (2000).
|
18 |
A. Kranti and G. A. Armstrong, J. Microelectronic Engineering, 84, 2775 (2007). [DOI: http://dx.doi.org/10.1016/j.mee.2007.01.157]
DOI
|
19 |
A. Goel, IEEE T. Electron Devices, 58, 296 (2011). [DOI: http://dx.doi.org/10.1109/TED.2010.2090421]
DOI
|
20 |
R. K. Singh, N. K. Shukla, and M. Pattanaik, Journal of Semiconductors, 33, 055001 (2012).
DOI
|
21 |
S. M. Salahuddin, J. Hailong, and V. Kursun, IEEE Int. Conf. Electron Devices and Solid-State Circuits, 1 (2013).
|
22 |
P. A. Stolk, IEEE Int. Electron Devices Meeting, 215 (2001).
|
23 |
J. Yang, P. M. Zeitzoff, and H. Tseng, IEEE T. Electron Devices, 54, 1464 (2007). [DOI: http://dx.doi.org/10.1109/TED.2007.896387]
DOI
|
24 |
S. M. Salahuddin, J. Hailong, and V. Kursun, IEEE Int. Symp. Circuits and Systems, 2331 (2013).
|
25 |
H. Zhu and V. Kursun, IEEE T. Circuits and Systems I, 61, 2013 (2014). [DOI: http://dx.doi.org/10.1109/TCSI.2014.2304661]
DOI
|
26 |
R. A. Kranti and G. A. Armstrong, Semiconductor Science and Technology, 23, 075049 (2008). [DOI: http://dx.doi.org/10.1088/0268-1242/23/7/075049]
DOI
|
27 |
K. Endo, S. O'uchi, Y. Ishikawa, Y. Liu, T. Matsukawa, M. Masahara, K. Sakamoto, J. Tsukada, K. Ishii, H. Yamauchi, and E. Suzuki, Applied Physics Express, 2, 054502 (2009). [DOI: http://dx.doi.org/10.1143/APEX.2.054502]
DOI
|
28 |
S. M. Salahuddin, J. Hailong, and V. Kursun, IEEE Int. Symp. Quality Electronic Design, 353 (2013).
|
29 |
Y. Wang, P. Huang, Z. Xin, L. Zeng, X. Liu, G. Du, and J. Kang, Japanese Journal of Applied Physics, 53, 04EC05 (2014). [DOI: http://dx.doi.org/10.7567/JJAP.53.04EC05]
DOI
|
30 |
Y. X. Liu, K. Endo, S. O'uchi, J. Tsukada, H. Yamauchi, Y. Ishikawa, K. Sakamoto, T. Matsukawa, M. Masahara, T. Kamei, T. Hayashida, and Ogura, European Solid-8 Device Research Conference, 202 (2010).
|
31 |
N. Miura, Y. Domae, T. Sakata, M. Watanabe, T. Okamura, T. Chiba, K. Fukuda, and J. Ida, IEEE Int. SOI Conference, 176 (2005).
|
32 |
B. Yu, IEEE Int. Electron Devices Meeting, 251 (2002).
|
33 |
F. Boeuf, IEEE Int. Electron Devices Meeting, 637 (2001).
|