• Title/Summary/Keyword: Electronic devices

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Effect of the Addition of $Li_2CO_3$ on Dielectric Properties of Barium Strontium Titanate Thick Film with Annealing Condition ($Li_2CO_3$가 첨가된 BST후막의 열처리조건에 따른 유전특정)

  • Jeon, So-Hyun;Kim, In-Sung;Song, Jae-Sung;Min, Bok-Gi;Yoon, Jon-Do
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2006.06a
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    • pp.311-312
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    • 2006
  • The dielectric Properties of add $Li_2CO_3$ to ($Ba_{0.6}Sr_{0.4})TiO_3$ powder in this research, made thick film by tape casting method and annealing at $970^{\circ}C$ for 2 hours each from the $O_2$, Ar and O2-plasma atmosphere were investigated. The dielectric Properties of Ar atmosphere was to higher with tunability. The dielectric constant was increased and Curie temperature was shifted to higher temperature with increasing of annealing temperature.

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Fabrication and Electrical Evaluation of Al/Cu Composite Conductor (Al/Cu 복합도체 제조 및 전기적 특성 평가)

  • Sim, Ki-Deok;Cho, Jeon-Wook;Bae, Jun-Han;Jung, Won-Mo;Sin, Deok-Su
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2005.07a
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    • pp.621-622
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    • 2005
  • Copper is widely used in electric wire, cable, conductor in electric devices. As the demand for electric power is increasing rapidly, electric power devices are getting amazingly bigger and complicated. The using of light-weight conductor can reduce the size and making cost of the electric devices. In high-frequency application, Electric current the current in a conductor tends to shift to the surface of the conductor, resulting in an uneven current distribution in the inner conductor. In the extreme case the current may essentially concentrate in the "skin" of the inner conductor as a surface current. In high frequency application, therefore, inner area of copper conductor may replace with aluminum conductor, which reduces the weight of conductor. This paper describes the manufacture and evaluation of composite conductors made of copper and aluminum.

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Device Optimization of N-Channel MOSFETs with Lateral Asymmetric Channel Doping Profiles

  • Baek, Ki-Ju;Kim, Jun-Kyu;Kim, Yeong-Seuk;Na, Kee-Yeol
    • Transactions on Electrical and Electronic Materials
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    • v.11 no.1
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    • pp.15-19
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    • 2010
  • In this paper, we discuss design considerations for an n-channel metal-oxide-semiconductor field-effect transistor (MOSFET) with a lateral asymmetric channel (LAC) doping profile. We employed a $0.35\;{\mu}m$ standard complementary MOSFET process for fabrication of the devices. The gates to the LAC doping overlap lengths were 0.5, 1.0, and $1.5\;{\mu}m$. The drain current ($I_{ON}$), transconductance ($g_m$), substrate current ($i_{SUB}$), drain to source leakage current ($i_{OFF}$), and channel-hot-electron (CHE) reliability characteristics were taken into account for optimum device design. The LAC devices with shorter overlap lengths demonstrated improved $I_{ON}$ and $g_m$ characteristics. On the other hand, the LAC devices with longer overlap lengths demonstrated improved CHE degradation and $I_{OFF}$ characteristics.

Resonant Displacement and Piezoelectric Properties of Thickness Shear Mode Piezoelectric Devices According to Length/Thickness Ratio (길이와 두께 비에 따른 두께 전단모드 압전소자의 공진 변위 및 압전특성)

  • Park, Min-Ho;Yoo, Ju-Hyun;Hong, Jae-Il;Jeong, Yeong-Ho
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.24 no.6
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    • pp.463-467
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    • 2011
  • In this study, thickness shear mode piezoelectric devices for AE sensor with excellent displacement and sensitivity characteristics were simulated using ATILA FEM program, and then fabricated. Displacement and electro mechanical coupling factors of the piezoelectric devices were investigated. The simulation results showed that excellent displacement and electromechanical coupling factor was obtained when the ratio of Length/Thickness was 1. The piezoelectric device of L/T= 1 exhibited the optimum values of fr= 150 kHz, displacement= $6.23{\times}10^{-8}$[m], $k_{15}$= 0.598. The results show that the thickness shear mode piezoelectric device is a promising candidate for the application of AE sensor piezoelectric device.

Smart Navigation System Implementation by MOST Network of In-Vehicle (차량 내 MOST Network를 이용한 지능형 Navigation 구현)

  • Kim, Mi-jin;Baek, Sung-hyun;Jang, Jong-wook
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2009.10a
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    • pp.82-85
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    • 2009
  • Lately, in the automotive market appeared keywords such as convenience, safety in presentation and increase importance of part of vehicle. Accordingly, the use of many electronic devices was required essentially and communication between electronic devices is being highlighted. Various devices such as controllers, sensors and multimedia device(audio, speakers, video, navigation) in-vehicle connected car network such as CAN, MOST. Modern in-vehicle network managed and operated as purpose of each other. In this Paper, intelligent car navigation considering convenience and safety implement on MOST Network and present system to control CAN Network in vehicle.

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Recent Research Trend in Synthesis of Two-Dimensional Graphene through Interface Engineering (계면 제어를 통한 2차원 그래핀 성장의 최근 연구 동향)

  • Lee, Seung Goo;Lee, Eunho
    • Journal of Adhesion and Interface
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    • v.22 no.3
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    • pp.79-84
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    • 2021
  • Graphene has been received a lot of attention as essential parts of future electronic and energy devices. Because of its extraordinary properties contributed from the atomic layer, the interface and surface engineering of graphene are promising approaches for realizing 2D materials-based high-performance devices. Herein, we summarize and introduce recent research trends of the synthesis of graphene through interface engineering for high-performance electronic and energy device applications, and then discuss the challenges and opportunities for achieving high-performance devices in next-generation electronics.

Technical Trends of Flexible, Transparent Electromagnetic Interference Shielding Film (유연한 투명 전자기 간섭 차폐 필름의 기술개발 동향)

  • Lim, Hyun-Su;Oh, Jung-Min;Kim, Jong-Woong
    • Journal of the Microelectronics and Packaging Society
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    • v.28 no.1
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    • pp.21-29
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    • 2021
  • Recently, semiconductor chips and electronic components are increasingly being used in IT devices such as wearable watches, autonomous vehicles, and smart phones. As a result, there is a growing concern about device malfunctions that may occur due to electromagnetic interference being entangled with each other. In particular, electromagnetic wave emissions from wearable or flexible smart devices have detrimental effects on human health. Therefore, flexible and transparent electromagnetic interference (EMI) shielding materials and films with high optical transmittance and outstanding shielding effectiveness have been gaining more attention. The EMI shielding films for flexible and transparent electronic devices must exhibit high shielding effectiveness, high optical transmittance, high flexibility, ultrathin and excellent durability. Meanwhile, in order to prepare this EMI shielding films, many materials have been developed, and results regarding excellent EMI shielding performance of a new materials such as carbon nano tube (CNT), graphene, Ag nano wire and MXene have recently been reported. Thus, in this paper, we review the latest research results to EMI shielding films for flexible and transparent device using the new materials.

On-Demand Remote Software Code Execution Unit Using On-Chip Flash Memory Cloudification for IoT Environment Acceleration

  • Lee, Dongkyu;Seok, Moon Gi;Park, Daejin
    • Journal of Information Processing Systems
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    • v.17 no.1
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    • pp.191-202
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    • 2021
  • In an Internet of Things (IoT)-configured system, each device executes on-chip software. Recent IoT devices require fast execution time of complex services, such as analyzing a large amount of data, while maintaining low-power computation. As service complexity increases, the service requires high-performance computing and more space for embedded space. However, the low performance of IoT edge devices and their small memory size can hinder the complex and diverse operations of IoT services. In this paper, we propose a remote on-demand software code execution unit using the cloudification of on-chip code memory to accelerate the program execution of an IoT edge device with a low-performance processor. We propose a simulation approach to distribute remote code executed on the server side and on the edge side according to the program's computational and communicational needs. Our on-demand remote code execution unit simulation platform, which includes an instruction set simulator based on 16-bit ARM Thumb instruction set architecture, successfully emulates the architectural behavior of on-chip flash memory, enabling embedded devices to accelerate and execute software using remote execution code in the IoT environment.

A Study on the Limited Rate Power Capacity for Applications for Precision Passive Devices Based on Carbon Nanotube Materials (탄소나노튜브 소재의 정밀 수동소자 적용을 위한 한계 정격전력 용량에 관한 연구)

  • Lee, Sunwoo
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.35 no.3
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    • pp.269-274
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    • 2022
  • We prepared carbon nanotube (CNT) paper by a vacuum filtration method for the use of a chip-typed resistor as a precision passive device with a constant resistance. Hybrid resistor composed of the CNT resistor with a negative temperature coefficient of resistance (T.C.R) and a metal alloy resistor with a positive T.C.R could lead to a constant resistance, because the resistance increase owing to the temperature increase at the metal alloy and decrease at the CNT could counterbalance each other. The constant resistance for the precision passive devices should be maintained even when a heat was generated by a current flow resulting in resistance change. Performance reliabilities of the CNT resistor for the precision passive device applications such as electrical load limit, environmental load limit, and life limit specified in IEC 60115-1 must be ensured. In this study, therefore, the rated power determination and T.C.R tests of the CNT paper were conducted. -900~-700 ppm/℃ of TCR, 0.1~0.2 A of the carrying current capacity, and 0.0625~0.125 W of the rated power limit were obtained from the CNT paper. Consequently, we confirmed that the application of CNT materials for the precision hybrid passive devices with a metal alloy could result in a better performance reliability with a zero tolerance.

Fabrication of Circulation Structures of Microfluidic Devices for Observation and Analysis of Micrometer-Scale Chemical Reactions (마이크로미터 단위 화학 반응 관찰 및 분석을 위한 미세 유량 제어 장치의 순환구조 제작 연구)

  • Jang, Wonjun;Lee, Namjong;Jung, Dawoon;Kim, Hong-Seok;Jung, Seung Chan;Han, Jae-Hee
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.35 no.4
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    • pp.342-347
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    • 2022
  • In-situ analyzation and detection of real-time chemical reactions can be a significant part in interpreting the underlying mechanism in very reactive chemical reactions. To do this, first we have designed a microfluidic device (MFD) pattern for observation of synthesis of hierarchical nanostructures based on graphene oxide (GO), conjugating the well-known coupling reaction by which the solution of 1-ethyl-3-(3-dimethylaminopropyl) carbodiimide (EDC)-mediated coupling is enhanced in the presence of n-hydroxysuccinimide (NHS) to make amide bonding, hereafter called as the EDC coupling. Then, we have manufactured microfluidic devices with multiple tens of micrometer-sized channels that can circulate those nanomaterials to be chemically reacted in the channels. These microfluidic devices were made by negative photo lithography and soft lithography. We showed the possibility of using Raman spectroscopy to reveal the basic mechanism of the energy storage applications.