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http://dx.doi.org/10.4313/JKEM.2022.35.3.9

A Study on the Limited Rate Power Capacity for Applications for Precision Passive Devices Based on Carbon Nanotube Materials  

Lee, Sunwoo (Department of Electrical Engineering, Inha Technical College)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.35, no.3, 2022 , pp. 269-274 More about this Journal
Abstract
We prepared carbon nanotube (CNT) paper by a vacuum filtration method for the use of a chip-typed resistor as a precision passive device with a constant resistance. Hybrid resistor composed of the CNT resistor with a negative temperature coefficient of resistance (T.C.R) and a metal alloy resistor with a positive T.C.R could lead to a constant resistance, because the resistance increase owing to the temperature increase at the metal alloy and decrease at the CNT could counterbalance each other. The constant resistance for the precision passive devices should be maintained even when a heat was generated by a current flow resulting in resistance change. Performance reliabilities of the CNT resistor for the precision passive device applications such as electrical load limit, environmental load limit, and life limit specified in IEC 60115-1 must be ensured. In this study, therefore, the rated power determination and T.C.R tests of the CNT paper were conducted. -900~-700 ppm/℃ of TCR, 0.1~0.2 A of the carrying current capacity, and 0.0625~0.125 W of the rated power limit were obtained from the CNT paper. Consequently, we confirmed that the application of CNT materials for the precision hybrid passive devices with a metal alloy could result in a better performance reliability with a zero tolerance.
Keywords
Resistor; Temperature coefficient of resistance (TCR); Carbon nanotube (CNT); Rated power; Passive device;
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Times Cited By KSCI : 1  (Citation Analysis)
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1 T. Damle, M. Varenberg, and L. Graber, Trans. Electr. Electron. Mater., 21, 329 (2020). [DOI: https://doi.org/10.1007/s42341-020-00180-5]   DOI
2 G. J. Sun, J. H. Yun, and M. W. Cheon, Trans. Electr. Electron. Mater., 22, 108 (2021). [DOI: https://doi.org/10.1007/s42341-020-00279-9]   DOI
3 E. M. Kim, M. R. Son, and C. Y. Kang, Trans. Korean. Inst. Elect. Eng., 67, 1055 (2018). [DOI: https://doi.org/10.5370/KIEE.2018.67.8.1055]   DOI
4 F. Zandman, P. R. Simon, and J. Szwarc, Resistor Theory and Technology, 1st ed. (Vishy Inter technology Inc, Malvern, USA, 2001) p. 5.
5 S. Y. Noh, Trans. Korean. Inst. Elect. Eng., 70, 483 (2021). [DOI: https://doi.org/10.5370/KIEE.2021.70.3.483]   DOI
6 S. Lee, J. Korean Inst. Electr. Electron. Mater. Eng., 34, 126 (2021). [DOI: https://doi.org/10.4313/JKEM.2021.34.2.126]   DOI
7 A. Fujiwara, R. Iijima, H. Suematsu, H. Kataura, Y. Maniwa, S. Suzuki, and Y. Achiba, Phys. B, 323, 227 (2002). [DOI: https://doi.org/10.1016/s0921-4526(02)00970-5]   DOI
8 O. Lourie and H. D. Wagner, Compos. Sci. Technol., 59, 975 (1999). [DOI: https://doi.org/10.1016/S0266-3538(98)00148-1]   DOI
9 J. S. Hwang and H. J. Kim, Korea Standards, 2008, KS C 60115-1, 15. 06.