• 한국전기전자재료학회논문지
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• 제28권9호
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• pp.555-560
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• 2015

This paper was proposed 900 V Power MOSFET with ESD protection circuits using zener diodes. And we were carried out and analyzed its electrical characteristics. As a result of designing 900 V power MOSFET, we obtained 1,000 V breakdown voltage, 3.49 V threshold voltage and $0.249{\Omega}{\cdot}cm^2$. And we designed ESD circuits using 2 series zener diode and 4 series zener diodes. After analyzing electrical characteristics, we obtained 26 V forward voltage drop and 47 V breakdown voltage. Therefore, This devices can enoughly use power module, SMPS and Automotive.

• Transactions on Electrical and Electronic Materials
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• 제12권1호
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• pp.7-10
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• 2011

High voltage (HV) integrated circuits are viable alternatives to discrete circuits in a wide variety of applications. A HV device generally used in these circuits is a lateral double diffused metal oxide semiconductor (LDMOS) transistor. Attempts to model LDMOS devices are complicated by the existence of the lightly doped drain and by the extension of the poly-silicon and the gate oxide. Several physically based investigations of the bias-dependent drift resistance of HV devices have been conducted, but a complete physical model has not been reported. We propose a new technique to model HV devices using both the BSIM3 SPICE model and a bias dependent resistor model (sub-circuit macro model).

• Journal of Power Electronics
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• 제6권2호
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• pp.114-120
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• 2006

This paper compares two types of direct torque controllers for permanent magnet synchronous motors(PMSMs). These controllers both use a single-chip FPGA(Field Programmable Gate Array) but have differing hardware configurations. One of the controllers was constructed by programming a soft-core CPU and hardware logic circuits written in VHDL(Very high speed IC Hardware Description Language), while the other was constructed of only hardware logic circuits. The characteristics of these two controllers were compared in this paper. The results show the controller constructed of only hardware logic circuits was able to shorten the control period and it was able to suppress the low torque ripple.

• 전자공학회논문지SC
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• 제40권3호
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• pp.135-144
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• 2003

본 논문에서는 고속 혼성모드 집적회로를 위한 온-칩(on-chip) CMOS 전류 및 전압 레퍼런스 회로를 제안한다. 제안하는 전류 레퍼런스 회로는 기존의 전류 레퍼런스 회로에서 부정확한 전류 값을 조정하기 위해 주로 사용되는 아날로그 보정 기법과는 달리 디지털 영역에서의 보정 기법을 사용한다. 또한, 제안하는 전압 레퍼런스 회로는 고속으로 동작하는 혼성모드 집적회로의 출력단에서 발생할 수 있는 고주파수의 잡음 성분을 최소한으로 줄이기 위해 고주파 신호 성분에 대해 작은 출력 저항을 볼 수 있는 구조의 레퍼런스 전압 구동회로를 사용한다. 이 레퍼런스 전압 구동회로는 전력 소모 및 칩 면적을 최소화하기 위해서 저 전력의 증폭기와 크기가 작은 온-칩 캐패시터를 사용하여 구현하였다. 제안하는 레퍼런스 회로는 0.18 um n-well CMOS 공정으로 설계 및 제작되었으며, 250 um x 200 um의 면적을 차지한다. 칩 제작 및 측정결과, 제안하는 전류 및 전압 레퍼런스 회로는 공급 전압 및 온도의 변화에 대해서 각각 2.59 %/V와 48 ppm/℃의 변화율을 보인다.

• 한국전자파학회논문지
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• 제18권2호
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• pp.199-205
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• 2007

본 논문에서는 초고속 디지털 PCB 회로에서 발생하는 GBN(Ground Bounce Noise)을 억제하기 위한 새로운 EBG(Electromagnetic Bandgap) 구조의 전원면을 제안하였다. 제안된 구조는 육각형 모양의 단위 셀과 각 셀을 연결하는 선로로 구성되어 있다. 육각형 모양의 단위 셀은 등방성을 띄어 인접 셀의 각 포트 사이의 전달 특성을 동일하게 한다. 제안된 구조는 실제 제작, 측정되었고 330 MHz부터 5.6 GHz까지 넓은 주파수 대역에서 -30 dB 이하로 GBN을 억제하는 특성을 나타낸다. Electromagnetic Interference(EMI) 방사 측정 시에도 일반 전원면/접지면에 비해 낮은 EMI 특성을 나타낸다. 본 논문에서 제안한 육각형 EBG 구조의 전원면은 실제 EBG 전원면의 적용에 효율적으로 작용하여 초고속 디지털 회로의 EMI 문제를 해결하는 데 기여할 것으로 기대된다.

• 전기학회논문지
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• 제61권12호
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• pp.1892-1897
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• 2012

Modern electronic circuits are of importance for the function of communication, traffic systems and security systems. An intentional threat to these systems could be of big casualties and economic disasters. This study has examined susceptibility of electronic circuits inside the cavity by HPEM(High Power Electromagnetics). The UWB measurements were done at an anechoic chamber using a RADAN voltage source, which can generate a transient impulse of about 200 kV. The HPEM wave penetrated inside the metal case appeared to the long damped ringwave of pulse length compared with the incident wave. In addition, the resonant frequency generated inside the metal case occurred primarily in the range of 1~3 GHz. The frequency band of 1~3 GHz was influenced on the electronic circuit, which was confirmed by an external antenna and an internal absorber. The electronic circuit was influenced by HPEM infiltrated into the cavity at the 86 kV/m out of the metal cases. Also in case of an absorber the susceptibility of an electronic circuit was smallest among other cases(aperture, antenna). It is considered that absorber has a function absorbing electromagnetic wave infiltrated into the cavity and simultaneously limiting resonance by varying a boundary condition inside the cavity. Based on the results, electronic equipment systems could be applied to protection that has suited system requirements.

• Transactions on Electrical and Electronic Materials
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• 제16권6호
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• pp.293-302
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• 2015

Degraded data stability, weaker write ability, and increased leakage power consumption are the primary concerns in scaled static random-access memory (SRAM) circuits. Two new SRAM cells are proposed in this paper for achieving enhanced read data stability and lower leakage power consumption in memory circuits. The bitline access transistors are asymmetrically gate-underlapped in the proposed SRAM cells. The strengths of the asymmetric bitline access transistors are weakened during read operations and enhanced during write operations, as the direction of current flow is reversed. With the proposed hybrid asymmetric SRAM cells, the read data stability is enhanced by up to 71.6% and leakage power consumption is suppressed up to 15.5%, while displaying similar write voltage margin and maintaining identical silicon area as compared to the conventional memory cells in a 15 nm FinFET technology.

• Nuclear Engineering and Technology
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• 제38권5호
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• pp.423-426
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• 2006

A developed neutron activation analysis(NAA) and gamma-spectrometry were applied to improve the analytical sensitivity and precision of impurities in electronic-circuit raw materials. It is well known that soft errors in high precision electronic circuits can be induced by alpha particles emitted from naturally occurring radioactive impurities such as U and Th. As electronic circuits have recently become smaller in dimension and higher in density, these alpha-particle emitting radioactive impurities must be strictly controlled. Therefore, new NAA methods have been established using a HTS(Hydraulic Transfer System) irradiation facility and a background reduction method. For eliminating or stabilizing fluctuated background caused by Rn-222 and its progeny nuclides in air, a nitrogen purging system is used. Using the developed NAA and gamma-spectrometry, ultra trace amounts of U(0.1ng/g) and Th(0.01ng/g) in an alumina ball and high purity silica used for an epoxy molding compound (EMC) could be determined.

• 산업기술연구
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• 제24권A호
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• pp.83-90
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• 2004

Generally, electronic appliances are used on the basis of normal power source supply. The power source inevitably includes the abnormal condition, such as, sudden voltage sagging, power interrupt, and induced noises. As the electronic appliances which include micro-controller-based circuits are being increased recently, the controller circuit sometimes malfunctions by the abnormal condition of the power source. This situation causes serious problems such as hitch of electric appliance, fire and medical instrument glitch, which produces serious situations. In this paper, development of power interrupt tester which is highly suitable for an endurance test device under abnormal power source to microprocessor-based circuits is proposed 89C2051 microcontroller is performed to make power interrupt signal, and software controls peripheral hardwares and built-in functions. Experimental results of this study will offer a good application to electronic appliance maker as a test device of hardware and software debugging use.

• 대한전기학회논문지:전기기기및에너지변환시스템부문B
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• 제52권3호
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• pp.140-146
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• 2003

In this paper, we suggested electronic ballast with the half bridge inverter for the automotive HID lamp. The electronic ballast for the automotive HID lamp should be supplied by the low-frequency square wave avoiding the acoustic resonance. When the HID lamp is hot state, the electronic ballast should supply the sufficient current to the take over to the lamp at the re-strike ignition state for a few milli-second. We have introduced the new take-over current control method that could have control operating frequency and minimize circuits to the take over current circuits.