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http://dx.doi.org/10.4313/JKEM.2015.28.9.555

Study on the Design of Power MOSFET with ESD Protection Circuits  

Nahm, Eui-Seok (Department of Ubiquitous IT, Far East University)
Kang, Ey Goo (Department of Photovoltaic Engineering, Far East University)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.28, no.9, 2015 , pp. 555-560 More about this Journal
Abstract
This paper was proposed 900 V Power MOSFET with ESD protection circuits using zener diodes. And we were carried out and analyzed its electrical characteristics. As a result of designing 900 V power MOSFET, we obtained 1,000 V breakdown voltage, 3.49 V threshold voltage and $0.249{\Omega}{\cdot}cm^2$. And we designed ESD circuits using 2 series zener diode and 4 series zener diodes. After analyzing electrical characteristics, we obtained 26 V forward voltage drop and 47 V breakdown voltage. Therefore, This devices can enoughly use power module, SMPS and Automotive.
Keywords
Power MOSFET; ESD; Zener diode; Breakdown voltage; Automotive; Renewable devices;
Citations & Related Records
Times Cited By KSCI : 1  (Citation Analysis)
연도 인용수 순위
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