• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.378-381
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• 2001

The electron drift mobility of poly(4,4'-cyclohexylidenediphenyl carbonate)(PC-Z) doped with 3,5-dimethy-3,5-di-t-butylstilbenequinone(MBSQ), 3,5,3,5-tetra-t-butyl stilbenequinone(TMSQ) and 3,5,3,5-tetra-methyl stilbenequinone(TMSQ) was measured by the time-of-flight technique. The electric field and temperature dependences of the electron drift mobility were discussed with Poole-Frenkel, Arrhenius formulations and non-Arrhenius type of temperature dependence. It was assumed that the hopping sites were Gaussian distribution. Mobility and activation energy of MBSQ were increased with increasing dopant. However, mobilities and activation energy of TBSQ and TMSQ were increased and decreased, respectively.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.42 no.9 s.339
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• pp.9-18
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• 2005

To make high-performance, low-power transistors beyond the technology node of 60 nm complementary metal-oxide-semiconductor field-effect transistors(C-MOSFETs) possible, the effect of electron mobility of the thickness of strained Si grown on a relaxed SiGe/SiO2/Si was investigated from the viewpoint of mobility enhancement via two approaches. First the parameters for the inter-valley phonon scattering model were optimized. Second, theoretical calculation of the electronic states of the two-fold and four-fold valleys in the strained Si inversion layer were performed, including such characteristics as the energy band diagrams, electron populations, electron concentrations, phonon scattering rate, and phonon-limited electron mobility. The electron mobility in an silicon germanium on insulator(SGOI) n-MOSFET was observed to be about 1.5 to 1.7 times higher than that of a conventional silicon on insulator(SOI) n-MOSFET over the whole range of Si thickness in the SOI structure. This trend was good consistent with our experimental results. In Particular, it was observed that when the strained Si thickness was decreased below 10 nm, the phonon-limited electron mobility in an SGOI n-MOSFT with a Si channel thickness of less than 6 nm differed significantly from that of the conventional SOI n-MOSFET. It can be attributed this difference that some electrons in the strained SGOI n-MOSFET inversion layer tunnelled into the SiGe layer, whereas carrier confinement occurred in the conventional SOI n-MOSFET. In addition, we confirmed that in the Si thickness range of from 10 nm to 3 nm the Phonon-limited electron mobility in an SGOI n-MOSFET was governed by the inter-valley Phonon scattering rate. This result indicates that a fully depleted C-MOSFET with a channel length of less than 15 m should be fabricated on an strained Si SGOI structure in order to obtain a higher drain current.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.1002-1005
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• 2002

We have synthesized novel stilbenequinone derivatives(ASQ, PSQ) and investigated the properties of their electron drift mobility. Characteristics of the ionization potential Ip and electron affinity Ea of the ASQ were investigated by determining both oxidation and reduction potentials. There were estimated Ip = 7.1 eV and Ea = 3.6 eV. The electron drift mobility of ASQ mixture(R:t-Bu 10wt%) was $1.5{\times}10^{-5}cm^2/V{\cdot}sec$ at $6.15{\times}10^{5}V/cm$ and $1.3{\mu}m$ thickness.

• The Proceedings of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.2 no.2
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• pp.55-58
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• 1988

Electron mobility which is a basic parameter to represent gas state, is calculated for 38mm 20W fluorescent lamp. 2 Electron Group Model is u&ed for electron distribution function. To prove this result electron mobility in 38mm 20W fluorescent lamp is measured at various wall temperatures. In order to obtain electric field strength of positive column, the sum of anode and cathode fall voltages assumed to be 15(VJ) and dual slit is used to measure positive column length. The measured and calculated result is potted under $10-80^{\circ}C$ wall temperature.

• Electrical & Electronic Materials
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• v.9 no.2
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• pp.174-179
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• 1996

We present a new physically based analytical equation for electron effective mobility in MOS inversion layers. The new semi-empirical model is accounting expicitly for surface roughness scattering and screened Coulomb scattering in addition to phonon scattering. This model shows excellent agreement with experimentally measured effective mobility data from three different published sources for a wide range of effective transverse field, channel doping and temperature. By accounting for screened Coulomb scattering due to doping impurities in the channel, our model describes very well the roll-off of effective mobility in the low field (threshold) region for a wide range of channel doping level (Na=3.0*10$^{14}$ - 2.8*10$^{18}$ cm$^{-3}$ ).

• Bulletin of the Korean Chemical Society
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• v.35 no.8
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• pp.2505-2511
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• 2014

Indium oxide nanocrystals ($In_2O_3$ NCs) with sizes of 5.5 nm-10 nm were synthesized by hot injection of the mixture precursors, indium acetate and oleic acid, into alcohol solution (1-octadecanol and 1-octadecence mixture). Field emission transmission electron microscopy (FE-TEM), High resolution X-Ray diffraction (X-ray), Nuclear magnetic resonance (NMR), and Fourier transform infrared spectroscopy (FT-IR) were employed to investigate the size, surface molecular structure, and crystallinity of the synthesized $In_2O_3$ NCs. When covered by oleic acid as a capping group, the $In_2O_3$ NCs had a high crystallinity with a cubic structure, demonstrating a narrow size distribution. A high mobility of $2.51cm^2/V{\cdot}s$ and an on/off current ratio of about $1.0{\times}10^3$ were observed with an $In_2O_3$ NCs thin film transistor (TFT) device, where the channel layer of $In_2O_3$ NCs thin films were formed by a solution process of spin coating, cured at a relatively low temperature, $350^{\circ}C$. A size-dependent, non-monotonic trend on electron mobility was distinctly observed: the electron mobility increased from $0.43cm^2/V{\cdot}s$ for NCs with a 5.5 nm diameter to $2.51cm^2/V{\cdot}s$ for NCs with a diameter of 7.1 nm, and then decreased for NCs larger than 7.1 nm. This phenomenon is clearly explained by the combination of a smaller number of hops, a decrease in charging energy, and a decrease in electronic coupling with the increasing NC size, where the crossover diameter is estimated to be 7.1 nm. The decrease in electronic coupling proved to be the decisive factor giving rise to the decrease in the mobility associated with increasing size in the larger NCs above the crossover diameter.

• Journal of the Korean Institute of Telematics and Electronics
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• v.5 no.1
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• pp.1-5
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• 1968

GaAs single crystals were grown epitaxially from Ga solution with carrier concentrations in the range and electron mobilities between 7,500 and 9,300$\textrm{cm}^2$/v-sec. at 300$^{\circ}$K, and 50,000 and 95,000 $\textrm{cm}^2$/V-sec. at 77$^{\circ}$K. A comparison of the theoretical and experimental curves for the mobility vs. temperature indicates that the significant scattering mechanisms are ionized impurities and phonons in the temperature range of 77$^{\circ}$K to 439$^{\circ}$K. This indicates that the epitaxial layers do not contain other mobility limiting imperfections to a significant degree. Photoluminescence spectra of the. epitaxial layers did not show any emission due to deep lying imperfection leve1s.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.994-997
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• 2002

We have synthesized novel Diphenoquinone(DQ) derivatives. Electron drift mobility of DQ series was measured and electron affinity$(E_a)$ of them is estimated 3.7~3.9eV by CV. Electron drift mobility$(\mu)$ of electric field dependence by time of flight(TOF) technique is $1.76{\times}10^{-5}cm^2/V{\cdot}s$(DQ5) at the concentration of 10wt% verse poly(4,4'-cyclohexylidene diphenylcarbonate)(Pc-Z) and $1.66{\times}10^6V/cm$.

• Proceedings of the Materials Research Society of Korea Conference
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• 1999.11a
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• pp.138-138
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• 1999

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.41 no.10
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• pp.1-7
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• 2004

In order to enhance the electron mobility in SOI n-MOSFET, we fabricated fully depletion(FD) n-MOSFET on the strained Si/relaxed SiGa/SiO$_2$/Si structure(strained Si/SGOI) formed by inserting SiGe layer between a buried oxide(BOX) layer and a top silicon layer. The summated thickness of the strained Si and relaxed SiGe was fixed by 12.8 nm and then the dependency of electron mobility on strained Si thickness was investigated. The electron mobility in the FD n-MOSFET fabricated on the strained Si/SGOI enhanced about 30-80% compared to the FD n-MOSFET fabricated on conventional SOI. However, the electron mobility decreased with the strained Si thickness although the inter-valley phonon scattering was reduced via the enhancement of the Ge mole fraction. This result is attributed to the increment of intra-valley phonon scattering in the n-channel 2-fold valley via the further electron confinement as the strained Si thickness was reduced.