• Transactions on Semiconductor Engineering
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• v.2 no.3
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• pp.13-18
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• 2024

This paper proposes a circuit utilizing auto zero technology to minimize offset and enhance accuracy in the reference generator and comparator. As evidence, a comparison between pre and post auto zero usage revealed a reduction of approximately 90% in standard deviation. The proposed circuit was implemented using a 55nm CMOS process, with an input frequency of 781.2 Hz. It achieves an Effective Number of Bits (ENOB) of 8.01 bits and a Signal-to-Noise Distortion Ratio (SNDR) of 49.98 dB.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2014.05a
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• pp.156-157
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• 2014

본 논문에서는 저전력 12비트 1MSps 연속 근사형 레지스터 아날로그-디지털 변환기를 제안한다. 제안하는 회로는 1.8V의 공급 전압에서 동작하며, Magnachip/SK Hynix $0.18{\mu}m$ CMOS 1Poly-6Metal 공정을 이용하여 설계하였다. 입력신호의 주파수가 100kHz일 때, 설계된 회로는 3.24mW의 낮은 소비전력 특성, $0.56mm^2$의 작은 칩 면적 특성, 70.03dB의 SNDR(Signal-to-Noise Distortion Ratio) 및 11.34비트의 ENOB(Effective Number of Bits) 특성을 보였다.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.49 no.4
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• pp.7-14
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• 2012

A image quality is limited by a sample-and-hold circuit of the X-ray CMOS image sensor even though simple mos switch or bootstrapped clock circuit are used to get high quality sampled signal. Because distortion of sampled signal is produced by the charge injection from sample-and-hold circuit even using bootstrapped. This paper presents the 3D micro-inductor design methode in the CMOS process. Using this methode, it is possible to increase the ENOB (effective number of bit) through the use of micro-inductor which is calculated and designed in standard CMOS process in this paper. The ENOB is improved 0.7 bit from 17.64 bit to 18.34 bit without any circuit just by optimized inductor value resulting in verified simulation result. Because of this feature, micro-inductor methode suggested in this paper is able to adapt a mamography that is needed high resolution so that it help to decrease patients dose amount.

• JSTS:Journal of Semiconductor Technology and Science
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• v.15 no.6
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• pp.695-702
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• 2015

A 1-V 1.6-GS/s 5.58-ENOB flash ADC with a high-speed time-domain comparator is proposed. The proposed time-domain comparator, which consumes low power, improves the comparison capability in high-speed operations and results in the removal of preamplifiers from the first-stage of the flash ADC. The time interpolation with two factors, implemented using the proposed time-domain comparator array and SR latch array, reduces the area and power consumption. The proposed flash ADC has been implemented using a 65-nm 1-poly 8-metal CMOS process with a 1-V supply voltage. The measured DNL and INL are 0.28 and 0.41 LSB, respectively. The SNDR is measured to be 35.37 dB at the Nyquist frequency. The FoM and chip area of the flash ADC are 0.38 pJ/c-s and $620{\times}340{\mu}m^2$, respectively.

• Journal of IKEEE
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• v.16 no.4
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• pp.343-348
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• 2012

A 11b 100KS/s Algorithmic ADC for Digital PFC controller is proposed. The proposed Algorithmic ADC structure for 11bit resolution is based on a cyclic architecture to reduce chip area and power consumption. The prototype Algorithmic ADC implemented with a 0.18um 1Poly-3Metal CMOS process shows a SNDR 66.7dB and ENOB 10.78bits. And the current consumption is about 780uA at 100KS/s and 5V. The occupied active die area is $0.27mm^2$.

• Journal of IKEEE
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• v.27 no.3
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• pp.333-339
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• 2023

The global market for wearable devices is growing, driving demand for efficient PMICs. Wearable PMICs must be highly energy-efficient despite limited hardware resources. Advancements in process technology enable low-power consumption, but traditional analog LDO regulators face challenges with reduced power supply voltage. In this paper, a novel ADC design with a 3-bit continuous-time flash ADC for the coarse loop and a 5-bit discrete-time SAR ADC for the fine loop is proposed for digital LDO, achieving a 34.78 dB SNR and 5.39 bits ENOB in a 55-nm CMOS technology.

• Journal of the Institute of Electronics and Information Engineers
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• v.49 no.12
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• pp.184-193
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• 2012

In this paper, a 5-bit 2-GS/s 2-way time interleaved pipeline ADC for high-speed serial link receiver is demonstrated. Implemented as a current-mode amplifier, the stage ADC simultaneously processes the tracking and residue amplification to achieve higher sampling rate. In addition, each stage incorporates a built-in 1-tap FIR equalizer, reducing inter-symbol-interference (ISI）without an extra digital post-processing. The ADC is designed in a 110nm CMOS technology. It comsumes 91mW from a 1.2-V supply. The area excluding the memory block is $0.58{\times}0.42mm^2$. Simulation results show that when equalizer is enabled, the ADC achieves SNDR of 25.2dB and ENOB of 3.9bits at 2.0GS/s sample rate for a Nyquist input signal. When the equalizer is disengaged, SNDR is 26.0dB for 20MHz-1.0GHz input signal, and the ENOB of 4.0bits.

• Journal of the Institute of Electronics and Information Engineers
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• v.54 no.6
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• pp.30-39
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• 2017

A digital calibration technique based on digital-domain averaging for cyclic ADC is proposed. The proposed calibration compensates for nonlinearity of ADC due to capacitance mismatch of capacitors in 1.5-bit/stage MDAC. A 1.5-bit/stage MDAC with non-matched capacitors has symmetric residue plots with respect to the ideal residue plot. This intrinsic characteristic of residue plot of MDAC is reflected as symmetric A/D transfer functions. A corrected A/D transfer function can be acquired by averaging two transfer functions with non-linearity, which are symmetric with respect to the ideal analog-digital transfer function. In order to implement the aforementioned averaging operation of analog-digital transfer functions, a 12-bit cyclic ADC of this work defines two operational modes of 1.5-bit/stage MDAC. By operating MDAC as the first operational mode, the cyclic ADC acquires 12.5-bits output code with nonlinearity. For the same sampled input analog voltage, the cyclic ADC acquires another 12.5-bits output code with nonlinearity by operating MDAC as the second operational mode. Since analog-digital transfer functions from each of operational mode of 1.5-bits/stage MDAC are symmetric with respect to the ideal analog-digital transfer function, a corrected 12-bits output code can be acquired by averaging two non-ideal 12.5-bits codes. The proposed digital calibration and 12-bit cyclic ADC are implemented by using a $0.18-{\mu}m$ CMOS process in the form of full custom. The measured SNDR(ENOB) and SFDR are 65.3dB (10.6bits) and 71.7dB, respectively. INL and DNL are measured to be -0.30/-0.33LSB and -0.63/+0.56LSB, respectively.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2011.05a
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• pp.143-146
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• 2011

A 50-MS/s 10-bit pipelined ADC with 1.2Vpp differential input range is proposed in this paper. The designed pipelined ADC consists of eight stage of 1.5bit/stage, one stage of 2bit/stage, digital error correction block, bias & reference driver, and clock generator. 1.5bit/stage is consists of sub-ADC, DAC and gain stage, Specially, a sample-and hold amplifier (SHA) is removed in the designed pipelined ADC to reduce the hardware and power consumption. Also, the proposed bootstrapped switch improves the Linearity of the input analog switch and the dynamic performance of the total ADC. The reference voltage was driven by using the on-chip reference driver without external reference. The proposed pipelined ADC was designed by using a 0.18um 1-poly 5-metal CMOS process with 1.8V supply. The total area including the power decoupling capacitor and power consumption are $0.95mm^2$ and 60mW, respectively. Also, the simulation result shows the ENOB of 9.3-bit at the Nyquist sampling rate.

• Journal of IKEEE
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• v.17 no.3
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• pp.275-283
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• 2013

In this paper, a 8bit 10Ms/s CMOS Folding and Interpolation analog-to-digital convertor is proposed. The architecture of the proposed ADC is based on a Folding & Interpolation using FR(Folding Rate)=8, NFB(Number of Folding Block)=4, IR(Interpolation Rate)=8. The proposed ADC adopts a preamplifier sharing method to decrease the number of preamplifier by half comparing to the conventional ones. This chip has been fabricated with a 0.35[um] CMOS technology. The effective chip area is $1.8[mm]{\times}2.11[mm]$ and it consumes 20[mA] at 3.3 power supply with 10[MHz] clock. The INL is -0.57, +0.61 [LSB] and DNL is -0.4, +0.51 [LSB]. The SFDR is 48.9[dB] and SNDR is 47.9[dB](ENOB 7.6b) when the input frequency is 100[kHz] at 10[MHz] conversion rate.