• The KIPS Transactions:PartA
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• v.11A no.2
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• pp.195-202
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• 2004

This paper introduces the design or parallel Pipeline high-speed analog-to-digital converter(ADC) for the high-resolution video applications which require very precise sampling. The overall architecture of the ADC consists of 4-channel parallel time-interleaved 10-bit pipeline ADC structure a]lowing 200MSample/s sampling speed which corresponds to 4-times improvement in sampling speed per channel. Key building blocks are composed of the front-end sample-and-hold amplifier(SHA), the dynamic comparator and the 2-stage full differential operational amplifier. The 1-bit DAC, comparator and gain-2 amplifier are used internally in each stage and they were integrated into single switched capacitor architecture allowing high speed operation as well as low power consumption. In this work, the gain of operational amplifier was enhanced significantly using negative resistance element. In the ADC, a delay line Is designed for each stage using D-flip flops to align the bit signals and minimize the timing error in the conversion. The converter has the power dissipation of 280㎽ at 3.3V power supply. Measured performance includes DNL and INL of +0.7/-0.6LSB, +0.9/-0.3LSB.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.18 no.12
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• pp.1983-1993
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• 1993

A power-reduction technique for full-flash A/D converters is proposed. As the resolution of a full-flash A/D converter increases linearly, the number of comparators increases exponentially. The power dissipation is generally larger than other A/D converter architectures because there are many comparators, and they are operating continuously. In this proposed architecture, only a selected number of conmarators are made to operate instead of activating all the comparators of the full-flash A/D convertor. To determine whichcomparators should be activated, voltage levelfider circuits are used. A new clock driver is developed to suppress the dynamic glitch noise which is fed back into the input stage of the comparator. By using this clock driver, the glitch noise in the current source is reduced to one fourth of that when the typical clock signal is applied. The proposed architecture has been implemented with 1.2 m 5GHz BiCMOS technology. The maximum conversion speed is 350Msamples/s. and dissipates only 900mW.

• Journal of Sensor Science and Technology
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• v.27 no.2
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• pp.93-98
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• 2018

In this paper, an energy-efficient 11.49-bit successive approximation register (SAR) capacitance-to-digital converter (CDC) for capacitive sensors with a figure of merit (FoM) of 31.6 pJ/conversion-step is presented. The CDC employs a SAR algorithm to obtain low power consumption and a simplified structure. The proposed circuit uses a capacitive sensing amplifier (CSA) and a dynamic latch comparator to achieve parasitic capacitance-insensitive operation. The CSA adopts a correlated double sampling (CDS) technique to reduce flicker (1/f) noise to achieve low-noise characteristics. The SAR algorithm is implemented in dual operating mode, using an 8-bit coarse programmable capacitor array in the capacitance-domain and an 8-bit R-2R digital-to-analog converter (DAC) in the charge-domain. The proposed CDC achieves a wide input capacitance range of 29.4 pF and a high resolution of 0.449 fF. The CDC is fabricated in a $0.18-{\mu}m$ 1P6M complementary metal-oxide-semiconductor (CMOS) process with an active area of 0.55 mm2. The total power consumption of the CDC is $86.4{\mu}W$ with a 1.8-V supply. The SAR CDC achieves a measured 11.49-bit resolution within a conversion time of 1.025 ms and an energy-efficiency FoM of 31.6 pJ/step.

• Journal of information and communication convergence engineering
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• v.10 no.1
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• pp.85-90
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• 2012

A 40-MS/sec 10-bit pipelined analog to digital converter (ADC) with a 1.2 Vpp differential input signal is proposed. The implemented pipelined ADC consists of eight stages of 1.5 bit/stage, one stage of 2 bit/stage, a digital error correction block, band-gap reference circuit & reference driver, and clock generator. The 1.5 bit/stage consists of a sub-ADC, digital to analog (DAC), and gain stage, and the 2.0 bit/stage consists of only a 2-bit sub-ADC. A bootstrapped switch with a constant resistance is proposed to improve the linearity of the input switch. It reduces the maximum VGS variation of the conventional bootstrapped switch by 67%. The proposed bootstrapped switch is used in the first 1.5 bit/stage instead of a sample-hold amplifier (SHA). This results in the reduction of the hardware and power consumption. It also increases the input bandwidth and dynamic performance. A reference voltage for the ADC is driven by using an on-chip reference driver without an external reference. A digital error correction with a redundancy is also used to compensate for analog noise such as an input offset voltage of a comparator and a gain error of a gain stage. The proposed pipelined ADC is implemented by using a 0.18-${\mu}m$ 1- poly 5-metal CMOS process with a 1.8 V supply. The total area including a power decoupling capacitor and the power consumption are 0.95 $mm^2$ and 51.5 mW, respectively. The signal-to-noise and distortion ratio (SNDR) is 56.15 dB at the Nyquist frequency, resulting in an effective number of bits (ENOB) of 9.03 bits.

• JSTS:Journal of Semiconductor Technology and Science
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• v.13 no.2
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• pp.98-107
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• 2013

This work describes a 13b 100 MS/s 0.13 um CMOS four-stage pipeline ADC for 3G communication systems. The proposed SHA-free ADC employs a range-scaling technique based on switched-capacitor circuits to properly handle a wide input range of $2V_{P-P}$ using a single on-chip reference of $1V_{P-P}$. The proposed range scaling makes the reference buffers keep a sufficient voltage headroom and doubles the offset tolerance of a latched comparator in the flash ADC1 with a doubled input range. A two-step reference selection technique in the back-end 5b flash ADC reduces both power dissipation and chip area by 50%. The prototype ADC in a 0.13 um CMOS demonstrates the measured differential and integral nonlinearities within 0.57 LSB and 0.99 LSB, respectively. The ADC shows a maximum signal-to-noise-and-distortion ratio of 64.6 dB and a maximum spurious-free dynamic range of 74.0 dB at 100 MS/s, respectively. The ADC with an active die area of 1.2 $mm^2$ consumes 145.6 mW including high-speed reference buffers and 91 mW excluding buffers at 100 MS/s and a 1.3 V supply voltage.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.38A no.4
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• pp.303-309
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• 2013

A low power 6-bit flash ADC that uses an input voltage range detection algorithm is described. An input voltage level detector circuit has been designed to overcome the disadvantages of the flash ADC which consume most of the dynamic power dissipation due to comparators array. In this work, four digital input voltage range detectors are employed and each input voltage range detector generates the specific clock signal only if the input voltage falls between two adjacent reference voltages applied to the detector. The specific clock signal generated by the detector is applied to turn the corresponding latched comparators on and the rest of the comparators off. This ADC consumes 68.82mW with a single power supply of 1.2V and achieves 4.9 effective number of bits for input frequency up to 1MHz at 500 MS/s. Therefore it results in 4.75pJ/step of Figure of Merit (FoM). The chip is fabricated in 0.13-um CMOS process.

• The KIPS Transactions:PartA
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• v.14A no.1 s.105
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• pp.47-54
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• 2007

In this paper we present a translation lookaside buffer (TLB) system with low power consumption for imbedded processors. The proposed TLB is constructed as multiple banks, each with an associated block buffer and a corresponding comparator. Either the block buffer or the main bank is selectively accessed on the basis of two bits in the block buffer (tag buffer). Dynamic power savings are achieved by reducing the number of entries accessed in parallel, as a result of using the tag buffer as a filtering mechanism. The performance overhead of the proposed TLB is negligible compared with other hierarchical TLB structures. For example, the two-cycle overhead of the proposed TLB is only about 1%, as compared with 5% overhead for a filter (micro)-TLB and 14% overhead for a same structure without continuos accessing distinction algorithm. We show that the average hit ratios of the block buffers and the main banks of the proposed TLB are 95% and 5% respectively. Dynamic power is reduced by about 95% with respect to with a fully associative TLB, 90% with respect to a filter-TLB, and 40% relative to a same structure without continuos accessing distinction algorithm.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.13 no.3
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• pp.184-196
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• 2020

In this paper, a single-bit 2nd-order delta-sigma modulator with the architecture of cascaded-of-integrator feedforward (CIFF) is proposed for precision measurement of current flowing through a secondary cell battery in a battery management system (BMS). The proposed modulator implements two switched capacitor integrators and a single-bit comparator with peripheral circuits such as a non-overlapping clock generator and a bias circuit. The proposed structure is designed to be applied to low-side current sensing method with low common mode input voltage. Using the low-side current measurement method has the advantage of reducing the burden on the circuit design. In addition, the ±30mV input voltage is resolved by the ADC with 15-bit resolution, eliminating the need for an additional programmable gain amplifier (PGA). The proposed a single-bit 2nd-order delta-sigma modulator has been implemented in a 350-nm CMOS process. It achieves 95.46-dB signal-to-noise-and-distortion ratio (SNDR), 96.01-dB spurious-free dynamic range (SFDR), and 15.56-bit effective-number-of-bits (ENOB) with an oversampling ratio (OSR) of 400 for 5-kHz bandwidth. The area and power consumption of the delta-sigma modulator are 670×490 ㎛2 and 414 ㎼, respectively.

• Journal of IKEEE
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• v.14 no.2
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• pp.51-57
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• 2010

A CMOS rail-to-rail high voltage buffer amplifier is proposed to drive the gamma correction reference voltage of large TFT LCD panels. It is operating by a single supply and only shows current consumption of 0.5mA at 18V power supply voltage. The circuit is designed to drive the gamma correction voltage of 8-bit or 10-bit high resolution TFT LCD panels. The buffer has high slew rate, 0.5mA static current and 1k$\Omega$ resistive and capacitive load driving capability. Also, it offers wide supply range, offset voltages below 50mV at 5mA constant output current, and below 2.5mV input referred offset voltage. To achieve wide-swing input and output dynamic range, current mirrored n-channel differential amplifier, p-channel differential amplifier, a class-AB push-pull output stage and a input level detector using hysteresis comparator are applied. The proposed circuit is realized in a high voltage 0.18um 18V CMOS process technology for display driver IC. The circuit operates at supply voltages from 8V to 18V.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.48 no.5
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• pp.25-33
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• 2011

This work proposes a skinny-type 10b 50MS/s 0.13um CMOS three-step pipeline ADC for CIS applications. Analog circuits for CIS applications commonly employ a high supply voltage to acquire a sufficiently acceptable dynamic range, while digital circuits use a low supply voltage to minimize power consumption. The proposed ADC converts analog signals in a wide-swing range to low voltage-based digital data using both of the two supply voltages. An op-amp sharing technique employed in residue amplifiers properly controls currents depending on the amplification mode of each pipeline stage, optimizes the performance of op-amps, and improves the power efficiency. In three FLASH ADCs, the number of input stages are reduced in half by the interpolation technique while each comparator consists of only a latch with low kick-back noise based on pull-down switches to separate the input nodes and output nodes. Reference circuits achieve a required settling time only with on-chip low-power drivers and digital correction logic has two kinds of level shifter depending on signal-voltage levels to be processed. The prototype ADC in a 0.13um CMOS to support 0.35um thick-gate-oxide transistors demonstrates the measured DNL and INL within 0.42LSB and 1.19LSB, respectively. The ADC shows a maximum SNDR of 55.4dB and a maximum SFDR of 68.7dB at 50MS/s, respectively. The ADC with an active die area of 0.53$mm^2$ consumes 15.6mW at 50MS/s with an analog voltage of 2.0V and two digital voltages of 2.8V ($=D_H$) and 1.2V ($=D_L$).