• Proceedings of the IEEK Conference
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• 2000.07b
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• pp.1063-1066
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• 2000

ln this paper, a new active phase shifter is proposed using a vector sum method, and it is shown that the proposed phase shifter is more efficient than the others in size, power, number of circuits, and gain. Also a unique digital phase control method of the circuit is suggested. The proposed scheme was designed and implemented using a Wilkinson power combiner/divider, a branch line 3dB quadrature hybrid coupler and variable gain amplifiers (VGAs) using dual gate FETs (DGFETs). Furthermore, it is also shown that the proposed scheme is more efficient and works properly with the digital phase control method.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.21 no.4
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• pp.1059-1067
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• 1996

A 128/129 dual-modulus prescalar IC is designed for application to frequency synthesizers in high frequency communication systems. The FET logic used in this design is SCFL(Source Coupled FET Logic), employing depletion-mode 1.mu.m gate length GaAs MESFETs with the threshold voltage of -1.5V. This circuit consists of 8 flip-flops, 3 OR gates, 2 NOR gates, a modulus control buffer and I/O buffers, which are integrated with about 440 GaAs MESFETs on dimensions of 1.8mm. For $V_{DD}$ and $V_{SS}$ power supply voltages 5V and -3.3V Commonly used in TTL and ECL circuits are determined, respectively. The simulation results taking into account the threshold voltage variation of .+-.0.2V and the power supply variation of .+-.1V demonstrate that the designed prescalar can operate up to 2GHz. This prescalar is fabricated using the ETRI MMIC foundary process and the measured maximum operating frquency is 621MHz.

• Journal of IKEEE
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• v.2 no.1 s.2
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• pp.1-14
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• 1998

In this paper, Antenna, LNA, Mixer, VCO, and Modulation/Demodulation in Baseband processor which are the RF main components in Wireless LAN system for ultra high-speed communications network are studied. Antenna bandwidth and selective fading due to multipath can be major obstacles in high speed digital communications. To solve this problem, wide band MSA which has loop-structure magnetic antenna characteristics is designed. Distributed mixer using dual-gate GaAs MESFET can achieve over 10dB LO/RF isolation without hybrid, and minimize circuit size. As linear mixing signal is produced, distortions can be decreased at baseband signals. Conversion gain is achieved by mixing and amplification simultaneously. Mixer is designed to have wide band characteristics using distributed amplifier. In VCO design, Oscillator design method by large signal analysis is used to produce stable signal. Modulation/Demodulation system in baseband processor, DS/SS technique which is robust against noise and interference is used to eliminate the effect of multipath propagation. DQPSK modulation technique with M-sequences for wideband PN spreading signals is adopted because of BER characteristic and high speed digital signal transmission.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.44 no.7 s.361
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• pp.41-46
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• 2007

A novel post-linearization technique is proposed for CMOS cascode low noise amplifier (LNA). The technique uses dual common gate FETs one of which delivers the linear currents to a load and the other one sinks the $3^{rd}$ order intermodulation currents of output currents from the common source FET. Selective current branching can be implemented in $0.18{\mu}m$ CMOS process by using a thick oxide FET as an IM3 sinker with a normal FET as a linear current buffer. A differential LNA adopting this technique is designed at 2.14GHz. The measurement results show 11dBm IIP3, 15.5dB power gain and 2.85dB noise figure consuming 12.4mA from 1.8V power supply. Compared with the LNA with turning off the IM3 sinker, the proposed technique improves the IIP3 by 7.5 dB.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.11 no.6
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• pp.742-750
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• 2018

In this paper, in order to enable zero-layer FTP cell using only 5V MOS devices on the basis of $0.13{\mu}m$ BCD process, the tunnel oxide thickness is used as the gate oxide thickness of $125{\AA}$ of the 5V MOS device at 82A. The HDNW layer, which is the default in the BCD process, is used. Thus, the proposed zero layer FTP cell does not require the addition of tunnel oxide and DNW mask. Also, from the viewpoint of memory IP design, a single memory structure which is used only for trimming analog circuit of PMIC chip is used instead of the dual memory structure dividing into designer memory area and user memory area. The start-up circuit of the BGR (Bandgap Reference Voltage) generator circuit is designed to operate in the voltage range of 1.8V to 5.5V. On the other hand, when the 64-bit FTP memory IP is powered on, the internal read signal is designed to maintain the initial read data at 00H. The layout size of the 64-bit FTP IP designed using the $0.13-{\mu}m$ Magnachip process .is $485.21{\mu}m{\times}440.665{\mu}m$($=0.214mm^2$).

• Journal of IKEEE
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• v.27 no.4
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• pp.494-500
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• 2023

Image processing is currently used in various fields. Among them, autonomous vehicles, medical image processing, and robot control require fast image processing response speeds. To fulfill this requirement, hardware design for real-time processing is being actively researched. In addition to the size of the input image, the hardware processing speed is affected by the size of the inactive video periods that separate lines and frames in the image. In this paper, we design three different scaler structures based on the type of line memories, which is closely related to the inactive video periods. The structures are designed in hardware using the Verilog standard language, and synthesized into logic circuits in a field programmable gate array environment using Xilinx Vivado 2023.1. The synthesized results are used for frame rate analysis while comparing standard image sizes that can be processed in real time.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.41 no.7
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• pp.21-29
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• 2004

Hot carrier degradation characteristics of Nano-scale CMOSFETs with dual gate oxide have been analyzed in depth. It is shown that, PMOSFET lifetime dominate the device lifetime than NMOSFET In Nano-scale CMOSFETs, that is, PMOSFET lifetime under CHC (Channel Hot Carrier) stress is much lower than NMOSFET lifetime under DAHC (Dram Avalanche Hot Carrier) stress. (In case of thin MOSFET, CHC stress showed severe degradation than DAHC for PMOSFET and DAHC than CHC for NMOSFET as well known.) Therefore, the interface trap generation due to enhanced hot hole injection will become a dominant degradation factor in upcoming Nano-scale CMOSFET technology. In case of PMOSFETs, CHC shows enhanced degradation than DAHC regardless of thin and thick PMOSFETs. However, what is important is that hot hole injection rather than hot electron injection play a important role in PMOSFET degradation i.e. threshold voltage increases and saturation drain current decreases due to the hot carrier stresses for both thin and thick PMOSFET. In case of thick MOSFET, the degradation by hot carrier is confirmed using charge pumping current method. Therefore, suppression of PMOSFET hot carrier degradation or hot hole injection is highly necessary to enhance overall device lifetime or circuit lifetime in Nano-scale CMOSFET technology

• Journal of the Korea Academia-Industrial cooperation Society
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• v.11 no.5
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• pp.1616-1626
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• 2010

This paper will show how self-alarming EAS(Electronic Article Surveillance) system can improve its receiving performance of magnetic field signal and reduce false alarm using dual-band wireless communication. Our research improved the receiving performance and the areas of recognition of magnetic signal through the change of VLF receiving circuit and alarm transmitting method. In addition, we verified the reduction of false alarm by improvement of integrity and distance between tag and receiver through experiment. Thanks to our research, we can build the high performance and economical EAS with low false alarm on the multi gate store.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.24 no.10A
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• pp.1546-1554
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• 1999

In this paper, Dynamic Fault Tree algorithm(DFT algorithm) is presented. This algorithm provides a concise representation of dynamic fault tolerance system including fault recovery techniques with fault detection, mask and switching function. And this algorithm define FDEP, CSP, SEQ, PAG gate which captures the dynamic characteristics of system. It show that this algorithm solved the constraints to satisfy the dynamic characteristics of system which there are in Markov and also this is able to satisfy the dynamic characteristics of system which there are in Markov and also this is able to covered the disadvantage of Fault tree methods. To show the key advantage of this algorithm, a traditional method, that is, Markov and Fault Tree, applies to TMR and Dual-Duplex systems with the dynamic characteristic and a presented method applies to those. He results proved that the DFT algorithm for solving the problems of the system is more effective than the Markov and Fault tree analysis model..

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.32 no.5
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• pp.371-375
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• 2019

Developing a thin-film transistor with characteristics such as a large area, high mobility, and high reliability are key elements required for the next generation on displays. In this paper, we have investigated the research trends related to improving the reliability of oxide-semiconductor-based thin-film transistors, which are the primary focus of study in the field of optical displays. It has been reported that thermal treatment in a high-pressure oxygen atmosphere reduces the threshold voltage shift from -7.1 V to -1.9 V under NBIS. Additionally, a device with a $SiO_2/Si_3N_4$ dual-structure has a lower threshold voltage (-0.82 V) under NBIS than a single-gate-insulator-based device (-11.6 V). The dual channel structure with different oxygen partial pressures was also confirmed to have a stable threshold voltage under NBIS. These can be considered for further study to improve the NBIS problem.