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http://dx.doi.org/10.4313/JKEM.2019.32.5.371

Research Trends for Improvement of NBIS Instability in Amorphous In-Ga-ZnO Based Thin-Film Transistors  

Yoon, Geonju (Department of Electrical and Computer Engineering, Sungkyunkwan University)
Park, Jinsu (Department of Electrical and Computer Engineering, Sungkyunkwan University)
Kim, Jaemin (Department of Electrical and Computer Engineering, Sungkyunkwan University)
Cho, Jaehyun (Department of Electrical and Computer Engineering, Sungkyunkwan University)
Bae, Sangwoo (Technology Quality & Reliability Foundry Division Samsung Electronics Co., LTD.)
Kim, Jinseok (Technology Quality & Reliability Foundry Division Samsung Electronics Co., LTD.)
Kim, Hyun-Hoo (Department of Display Engineering, Doowon Technical University)
Yi, Junsin (Department of Electrical and Computer Engineering, Sungkyunkwan University)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.32, no.5, 2019 , pp. 371-375 More about this Journal
Abstract
Developing a thin-film transistor with characteristics such as a large area, high mobility, and high reliability are key elements required for the next generation on displays. In this paper, we have investigated the research trends related to improving the reliability of oxide-semiconductor-based thin-film transistors, which are the primary focus of study in the field of optical displays. It has been reported that thermal treatment in a high-pressure oxygen atmosphere reduces the threshold voltage shift from -7.1 V to -1.9 V under NBIS. Additionally, a device with a $SiO_2/Si_3N_4$ dual-structure has a lower threshold voltage (-0.82 V) under NBIS than a single-gate-insulator-based device (-11.6 V). The dual channel structure with different oxygen partial pressures was also confirmed to have a stable threshold voltage under NBIS. These can be considered for further study to improve the NBIS problem.
Keywords
Oxide semiconductor; Thin-film transistor; IGZO; Bias stress; NBIS;
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