• Journal of the Korea Institute of Information and Communication Engineering
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• v.7 no.3
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• pp.384-389
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• 2003

A new two-step soft-output Viterbi algorithm (SOVA) decoder architecture is presented. A significant reduction in the decoding latency can be achieved through the use of the dual-port RAM in the survivor memory structure of the trace-back unit. The system complexity can be lowered due to the determination of the absolute value of the path metric differences inside the add-compare-select (ACS) unit. The proposed SOVA architecture was verified successfully by the functional simulation of Verilog HDL modeling and the FPGA prototyping. The SOVA decoder achieves a data rate very close to that of the conventional Viterbi Algorithm (VA) decoder and the resource consumption of the realized SOVA decoder is only one and a half times larger than that of the conventional VA decoder.

• Journal of the Korean Institute of Telematics and Electronics C
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• v.36C no.8
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• pp.22-34
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• 1999

In this paper, an efficient test algorithm for embedded dual-port memories is presented. The proposed test algorithm can be used to test embedded dual-port memories faster than the conventional multi-port test algorithms and can be used to completely detect stuck-at faults, transition faults and coupling faults which are major target faults in embedded memories. Also, in this work, BIST which performs the proposed memory testing algorithm is designed using Verilog-HDL, and simulation and synthesis for BIST are performed using Cadence Verilog-XL and Synopsys Design-Analyzer. It has been shown that the proposed test algorithm has high efficiency through experiments on various size of embedded memories.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.3 no.3
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• pp.3-7
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• 2010

As the distance between signal lines in memories of high density ICs like SoCs decreases rapidly, failure occurs more frequently and effective memory test techniques are needed. In this paper, a new SRAM structure is proposed to decrease test complexity and test time for embedded DRAMs. In the presented technique, because memory test can be handled as a single port testing and read-write operation is possible at dual port without high complexity, test time can be much reduced.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.39 no.10
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• pp.57-64
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• 2002

The structure of conventional CAM(Content Addressable Memory) cell, used to Look-up table scheme in Huffman CODEC, is not performed by being separated in reading, writing and match operation. So, there is disadvantages that the control is complicated, and the floating states of match line force wrong operation to be happened in reading, writing operation. In this paper, in order to improve the disadvantages and proces the data fast, fast Look-up table is designed using DBLCAM(Dual Bit Line CAM)-performing the reading, writing operation and match operation independently and Two-port SRAM being more fast than RAM in an access speed. Look-up table scheme in Huffman CODEC, using DBLCAM and Two-port SRAM proposed in this paper, is designed in Cadence tool, and layout is performed in 0.6${\mu}{\textrm}{m}$ 2-poly 3-metal CMOS full custom. And simulation is peformed with Hspice.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.14 no.11
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• pp.2541-2547
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• 2010

In this paper, we propose a design technique which replaces logic transistors of 1.2V with medium-voltage transistors of 3.3V having small off-leakage current in repetitive block circuits where speed is not an issue, to implement a low-power eFuse OTP memory IP in the stand-by state. In addition, we use dual-port eFuse cells reducing operational current dissipation by reducing capacitances parasitic to RWL (Read word-line) and BL (Bit-line) in the read mode. Furthermore, we propose an equivalent circuit for simulating program power injected to an eFuse from a program voltage. The layout size of the designed 512-bit eFuse OTP memory IP with a 90nm CMOS image sensor process is $342{\mu}m{\times}236{\mu}m$. It is confirmed by measurement experiments on 42 samples with a program voltage of 5V that we get a good result having 97.6 percent of program yield. Also, the minimal operational supply voltage is measured well to be 0.9V.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.15 no.10
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• pp.2209-2216
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• 2011

In this paper, we design a 32-bit eFuse OTP memory for PMICs using MagnaChip's $0.18{\mu}m$ process. We solve a problem of an electrical shortage between an eFuse link and the VSS of a p-substrate in programming by placing an n-well under the eFuse link. Also, we propose a WL driver circuit which activates the RWL (read word-line) or WWL (write word-line) of a dual-port eFuse OTP memory cell selectively when a decoded WERP (WL enable for read or program) signal is inputted to the eFuse OTP memory directly. Furthermore, we reduce the layout area of the control circuit by removing a delay chain in the BL precharging circuit. We'can obtain an yield of 100% at a program voltage of 5.5V on 94 manufactured sample dies when measured with memory tester equipment.

• Journal of Institute of Control, Robotics and Systems
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• v.10 no.2
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• pp.178-184
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• 2004

In this paper, we designed an image processing system for the high speed line-scan camera which adopts the new memory model we proposed. As a resolution and a data rate of the line-scan camera are becoming higher, the faster image processing systems are needed. But many conventional systems are not sufficient to process the image data from the line-scan camera during a very short time. We designed the memory controller which eliminates the time for transferring image data from the line-scan camera to the main memory with high-speed SRAM and has a dual-port configuration therefore the DSP can access the main memory even though the memory controller are writing the image data. The memory controller is implemented by VHDL and Xilinx SPARTAN-IIE FPGA.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.19 no.6
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• pp.1046-1055
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• 1994

In this paper, to design high speed 1 line VRAM(Video RAM) suitable for image signal processing with ASIC(Application Specific IC) method, the VRAM memory core has been designed using 3-TR dual-port dynamic cell which has excellent access time and integration characteristics. High speed pipeline operation was attained by separating the first row from the subarray 1 memory core and the simultaneous I/Q operation for a selected single address was made possible by adopting data-latch scheme. Peripheral circuits were designed implementing address selector and 1/2V voltage generator. Integrated ASIC has been optimized using 1.5[ m] CMOS design rule.

• Journal of Institute of Control, Robotics and Systems
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• v.5 no.6
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• pp.691-697
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• 1999

This paper describes the implementation of a high speed image processing board. This image processing board is consist of a image acquisition part and a image processing part. The image acquistion part is digitizing the image input data from CIS and save it to the dual port RAM. By putting on the dual port memory between two parts, during acquistion of image, the image processing part can be effectively processing of large-volume image data. Most of all image preprocessing part are integrated in a large-scaled FPGA. We arwe using ADSP-2181 of the Analog Device Inc., LTD. for a image processing part, and using the available all memory of DSP for the large-volume image data. Especially, using of IDMA exchanges the data with the external microprocessor or the external PC, and can watch the result of image processing and acquired image. Finally, we show that an implemented image processing board used for the simulation of image retreval by the one of the typical application.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.16 no.7
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• pp.1455-1462
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• 2012

In this paper, a BCD process based high-reliability 24-bit dual-port eFuse OTP Memory for PMICs is designed. We propose a comparison circuit at program-verify-read mode to test that the program datum is correct by using a dynamic pseudo NMOS logic circuit. The comparison result of the program datum with its read datum is outputted to PFb (pass fail bar) pin. Thus, the normal operation of the designed OTP memory can be verified easily by checking the PFb pin. Also we propose a sensing margin test circuit with a variable pull-up load out of consideration for resistance variations of programmed eFuse at program-verify-read mode. We design a 24-bit eFuse OTP memory which uses Magnachip's $0.35{\mu}m$ BCD process, and the layout size is $289.9{\mu}m{\times}163.65{\mu}m$ ($=0.0475mm^2$).